BUV28

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BUV28

I W I f S Q I I L iO T O M I

FAST NPN SWITCHING TRANSISTOR

■ VERY LOW SATURATION VOLTAGE

■ FAST TURN-OFF AND TURN-ON

DESCRIPTIO N

High speed transistor suited for low voltage applica

tions.

High frequency and efficiency converters switching regulators motor control.

ABSOLUTE MAXIMUM RATINGS

S y m b o l P a r a m e t e r V a l u e U n i t

VcBO Collector-base Voltage (Ie =0) 400 V

VcEO Collector-emitter Voltage (Ib = 0) 200 V

Vebo Emitter-base Voltage (lc =0) 7 V

lc Collector Current 10 A

•cm Collector Peak Current 15 A

Ib Base Current 2 A

Ibm Base Peak Current 4 A

P tot Total Dissipation at T c < 25°C 85 W

P tot Total Dissipation at T c < 60°C 65 W

T stg Storage Temperature - 65 to 175 °C

Ti Max. Operating Junction Temperature 175 °C

December 1988 1/6

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THERMAL DATA

Rthj-ca se Thermal Resistance Junction-case Max 1.76 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Symbol Param eter T est C onditions Min. Typ. Max. Unit

IcER Collector Cutoff Current (Rbe =500)

Voe = 400V Tc = 125°C 3 mA

IcEX Collector Cutoff Current

Vce = 400V VBE = - 1.5V Tc = 125°C 1 mA

Iebo Emitter Cutoff Current (lc = 0)

>iniimLU>

1 mA

VcEO(sus)* Collector Emitter Sustaining Voltage

lc = 0.2A L = 25mH 200 V

Vebo Emitter-base Voltage (lc = 0)

Ie = 50mA 7 30 V

VcE(sat)* Collector-emitter lc =3A l B = 0.3A 0.7 V

Saturation Voltage lc =6A lB = 0.6A 1.5

VBE(sat)* Base-emitter

Saturation Voltage o II CD > lB = 0.6A 2 V

RESISTIVE LOAD Vcc = 150V lc = 6A 0.3 1 ps

ton Storage Time VBE = - 6V IB1 = 0.6A 0.5 1.5 gs

ts Fall Time Rbb = 5Q 0.1 0.25 gs

tf Turn-on Time

INDUCTIVE LOAD Vcc = 150V _o II CD < 1 gs

ts Storage Time I b1= 0.6A < 03 m ^II 1 CD < 0.04 gs

tf Fall Time Lb = 1gH

ts Storage Time Vcc =150V O II <D > 3 gs

tf Fall Time lBf = 0.6A > m ii 1 in>

0.2 gs

Lb=1gH Tj =125°C

Pulsed : Pulse duration = 300ns, duty cycle = 2%.

2/6 T SGS-THOMSON

“ 7# RHilEISOIllLIilSI'BIBBaOC*

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DCand Pulse Area. Collector-emitter Voltage vs. Base-emitter Resistance.

10° 2 5 10' 2 5 1O2 2 5 103 2 5 104 RbeU11 Power and Is/b Derating vs. Case Temperature.

DC Current Gain.

Transient Thermal Response.

10

lo-

Minimum Base Current to saturate the Transistor.

10' 2 5 102 2 5 102 2 5 to4 2 5 105 iplusl

0 2 4 6 8 10 12 lc ( A )

SCS-THOMSON

M3REX5USCTBISG33

3/6

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Base Characteristics.

o o.s 1 iR ia i

Collector Saturation Region.

O 0.5 1 lB (A)

Saturation Voltage. Collector Current Spread vs Base-emitter Voltage.

4/6 r = 7 SGS-THOMSON

^ 7 # amcmoLaenianDct

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Forward Biased Safe Operating Area (FBSOA).

0 100 200 300 VCE (V)

The hatched zone can only be used for turn on.

Forward Biased Accidental Overload Area (FBAOA).

The Kellog network (heavy point) allows the calcu

lation of the maximum value of the short-circuit cur

rent for a given base current Ib (90 % confidence).

Reverse Biased Safe Operating Area (RBSOA).

0 100 200 300 V c £ (V )

Reverse Biased Accidental Overload Area (RBAOA).

After the accidental overload current, the RBAOA has to be used for the turn off.

High accidental surge currents (I > Ic m) are allowed if they are non repetitive and applied less than 3000 times during the component life.

5 7

SCS-THOMSON mcmmssmmua

5/6

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Switching Times vs Collector Current (resistive load).

<#«)

4 2

1

0.4 0.2

0.1

0.04 0.02 0,01

: RESISTIVE LC _ l(V*B = 10

7AD

vcc = 150 V

*S

t o n

—

tf

— — — ^— —

0 1 2 3 4 5 6 l C (A )

Switching Times Test Circuit on Inductive Load.

B Y X 6 1 -4 0 0

Switching Times vs Collector Current.

Switching Times vs Junction Temperature (resistive load).

% — RESISTI—

VE LOAC

t f

175

150

125

100

ts t o n

0 25 50 75 100 125 Tj(OC»

Switching Times vs Junction Temperature (inductive load).

Fall Times vs rapplied Voltage Slope.

SGS-THOMSON

M C W KilU iC TIW M IO 6/6