Pełen tekst

(1)

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Levei

• dv/'d t rated

• Low on-resistance

• 175 °C operating temperature

/ ^ X X X w / \ r . y \ / y / y y j y y / X / O T /

VHU5155

n : ~ a n : — o n : ~ o

n i l i m i <1 m i O

r~\ n

K j u

T u n p \ / l - K - l / 1- * O r r i ^ r i n n H n r l o

. . - y ~ ~ ~ ~

■ / r ~ v U O f U f l L J o ( o n )

R l 1 7 1 0 9 A I

1—/ W C_ 1 U t _ / \ 1__ R n \ / / I 9 A n n ow o T1 D . 9t _ £ _ W # \ 1__f9 n A R n R 7 n 7 R . Q 1 R R R . A 9

V - / V / V V - / 1 U U V # \ £ _

Maximum Ratings

D a r a m o t o r

1 M l U l l I V I V I w y n i K/M IQ w m h n l X / o l i i o c

V U l M VrW 1 I n i tW l I I I

P r i n t i m i a i i o r l r n i n m i r r o n t

W U I 1 LI 1 I U C U O U l d l l 1 U U I 1 C l 1 L / _

# u

v\A

t _ _ n ~ 7 o p 1

C ~

^

>1 O

*+£ .

Pulsed drain current

' D p u l s

T r w - o / C =

-4 o n 1 D O

Avaianche energy, single puise / D

=

42 A,

t / D D =

25 V, f i GS

=

25

Q

E a s m J

L

=

i0 2 pH, 7j

=

25 °C i8 0

Reverse diode dv/df dv/df KV/ps

/s =

42 A, VDS

=

40 V, d//df

=

200 A/ps

6

Gate source voltage

Vq q

± 14 V

Power dissipation

P i n tIU l

W

7 V = 2 5 ° o

■ V - / --- ---

200

O n p r a t i n n t p m n p r p t n r p* W . . W. w T :

1 J

-55 ...

+

175

0 o

Storage temperature

^ " s t g

-55 ...

+

175

T h o r m a I r o c i e t a n n o o h i r \ o o c o

1 I I U I I I I U I 1 U O I O I U I 1 \ s \ s , U l ll|^/ UU.VJU o . .

* ‘ t n j u

^ n R 9

u . u u V t \ M1 X/ V V

T h o r m o l r o o i o t o n n o n h i n t r i o m k i o n t

1 1 I C I M i d i 1 C O I O L d l I C C , C l l i p L C d l 1 I C I C I 1 L

“ thJA

-^ / c^ 7 1;

r \ 1 N 1 R ■ ■ ■ r l i+i / r\ + *-\ n /-« tr\ i 1 N 1 J [ f \ f \ A f \

L / i i M i i u i m u i i y c d i c y u i y , l/i i n m-w u h u r

i _

i i- « i : — ~ + ; ~ h i m 11- O ' o n h

i i z o u i u i i c t u u u c u e y u i y , u n v i i i z o o o - i /r/r / h “ 7/r /

J J / 1 / D / J O

-4i r \ r -

i^ / e o

Semiconductor Group [

(2)

Electrical Characteristics, at T: = 25°Ci unless otherwise specified

Parameter Symbol Values Unit

min tun * y t*m ■ I IMAi mav

Static Characteristics

Drain- source breakdown voltage Vns = O V ./n = 0.25 mA, Ti = -40 °C

VrRRtn.RR 50

V

Gate threshold voltaoe

\/i^o = \/no /n — 1 mA

• U O - U O .

- U ...

Vrz

ly

1.2 1.6

Zero gate voltage drain current i/™ = Rn \/ \ / ^ = n \/ T: = " US v i ' US “ v i 1 J or °n w

\/~ „ = Rn \ / \ / — = n \ / t = .An ° n

* U S ^ , v -' » i » U S w v i ' j - r v ' ^

t/DS = 50 V, VGS = 0 V , Tj = 150 °C

0.1

■j 10

m n

i v v

100

nA I I# l pA Gate-source leakage current

i / _ o n \ / i / _ n w

VQS v » VDS ” u v

I gss

h n

i u

h

l uu

n n

nA

u ic iin -o o u iu e uii-iesisicm ue

» a I— \ I I n j a

V G S = o V , /D = Z l M

n DS(on)

n n n

u.u^ u.u^o

n n n n

n ^ n //-\ i—

i^ / e o

Semiconductor Group

(3)

Parameter Svmbol _ # _ - - Values Unit min. tvn. ~ j t~ ~ max.

Runom in RhoKontn^ictinc

U y i l H I I I I V V I I « I H V I V I I « 7 I I \ / ^

1 r o o n o o n r l i m + o to o n i i d i i o u u i l u u o i a i i u c

y f s

oO

\/ \ o / n / _ o - i a

V D S ^ ^ * I D * n D S ( o n ) m a x , ' D “ ^ 1 «

h n

1 u o c

O J -

l i i p i i i c a p a c i t a n c e o

° i s s

~ 1— p i "

\ 0 n \ / \ 0 n r x / / -s n a i i _

V G S = u

v, vqs

= ^ o

v,

t = i i v i n z -

A -71—rv 1 / o u

n n n n z o o u

Output capacitance

V 'q s =

u v,

v'd s =

25 V,

f =

1 MHz

G ’ o s s

550 825

Reverse transfer capacitance

O r s s

VQS

=

0 V, Vns

=

25 V,

f =

1 MHz

-

240 360

Turn-on delay time

t r \ ( n n \

v ns

Vnn

U U =

30 V.

' =

5 V.

'

In

\—/ =

3 A

R ^ c = S O Q

- - u o ---- — -

30 45

Rise time

t‘ I_

\ / n n = 3 0 \ / \ / ^ = S \ / /ro = 3 A

' U U v > ' w W ’ * U w ' ‘

R --- = R H O

1 “ - il wv yw o n e ;

T i i r n r \ f f r l o l o u t i m o i u i i r u n u u i a y u i n t ^

‘ d ( o f f )

VDD

=

30 V, VGS

=

5 V,

/ D =

3 A

o _ c n

n G S ” ^ -

o o n

o o u A A O

H-H-U

Fail time

ji f.

i 0 n r> \ / i / r \ / f n a

v DD

=

OU V, V

0 3 =

O V,

/ D =

O M

f f GS

=

50 Q

-

i 10 150

-4 n #r\ i—

iz /e o

Semiconductor Group o

(4)

Electrical Characteristics, at T: = 25°Ci unless otherwise specified

r a i cai i i c i d o y m u u i v a i u c o i i n ; t

U l I I I

m i l l . i y f j .

a mjm.

m S X .

n c v c i o c u i u u c

Inverse diode continuous forward current

~r r\ir o/-\

/ o = ^ o o

Is

a n

A

inverse diode direct current,puisea Tc = 25 °C

1 SM

168 inverse diode forward voitage

VQS = 0 V, l F = 84 A

V' sd

1.2 1.7

V

Reverse recovery time

t/R = 30 V. /.=-/ ii ' i w, i • q d/Wdf = 100 A/us *i

frr

85

ns

Reverse recovery charge

VR = 30 V, /F-/Si d/F/d f = 100 A/ps

Qrr

120

pC

4

A a

l^ / y o

n i r \ i—

Semiconductor Group

(5)

P l o t = / ( 7 c )

/D = /(7c)

-- --- ~ ---- ~ 4- ---1 / S C \ / f j c t i c t i i i e i e i . v g g i u v

A

\ Lr

\ w

\

\

\

\

s \

V

\

\

s.

\

kr

\

.

\\

| \

\

0 20 40 60 80 100 120 140 °C 180

\ \ N i

\ >i.

\

\

\ \1

\

\ A

v

\

\

0 20 40 60 80 100 120 140 °C 180

s a i e o p e r a t i n g a r e a

/_ = m/__i

■u ■''"US'

parameter: D = 0.01, 7"c = 25°

Transient thermal impedance

-7

_

£ t ± \

^th JC = J V

parameter: D = fp / T

-4 n i r \ r -

i^ / a o

Semiconductor Group o

(6)

Typ. output characteristics

I n =

parameter: fp = 80 ps

Typ. drain-source on-resistance

^DS (on) = JU d I parameter: i/gg

Ptc t = 2Co w

V

m ,

a

- f g s

M

a 2.0 b 2.5 c 3.0 d 3.5 e 4.0 f 4,5 9 5.0 h 5.5 i 6.0 - j 7.0 k 8.0 -

// / w / w .

7 X

\

\

i

A 7/// \

#//>

III/ W J u f / /

s \

V

n . / L . M i

W

/

/

# 7

# / .

# / /

f /

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 r V 5,0 0 10 20 30 40 50 60 70 80 A 100

. /_

■D

Typ. transfer characteristics /D = f (V qs ) parameter: fp = 80 ps

t /Ds ^ 2 X / D X flDS(on)max

Typ. forward transconductance gfs = f (In) parameter: fp = 80 ps,

t/Ds ^ 2 X / D X flDS(on)max

ji

o

2 3 4 5 6 V 10

9fs

A

X X

/

/

7

/ / r / / / /

i t

/ I / 1

0 5 10 15 20 25 30 35 A 45

O

j

i^ / e o

n i r \ i—

Semiconductor Group

(7)

^ n S rf nnl = / ( ^ i )

“ “ V---/ J

/ _ O-i A t / _ C \/

[Jell c U N t n e i . /q — I M , V Q g — U V

Vns rtm = /(Ti)

---\‘ ' V J

1/ _ t / / _

[jc iic u lit;it? i. V Q g — V D S ’ ; D —

-60 -20 20 60 100 °C 180

_____ w T

^ 'j

-60 -20 20 60 100 °C 180

______w T

^ 'j

Typ. capacitances

j ’ /1 / \

u = ^ v DS;

parameter: V q s - 0V, f = 1 M H z

Forward characteristics of reverse diode /p - / ( ^ s d )

0,0 0,4 0,8 1.2 1,6 2,0 2,4 V 3,0

^ n #/-\ i—

i ^ / e o

Semiconductor Group /

(8)

Avalanche energy EAS = /(7j) parameter: / n = 42 A, Vnn = 25 V

-> _ o t z

’ G S “ “ »

/ _ -1 n o . . l j

i— i U4i |jn

Drain-source breakdown voltage

^ (B R )D S S = f ( T i )

20 40 60 80 100 120 140 °C 180

_____ T

" ' i

62

V

1/ cn

V(BR)DSS 057

58 57 56 55

53 52 51 50 49 48 47

-60 -20 20 60 100 °C 180

______T

" ' i

A

f / _ / /

yl J

/

y /

j n //-\ i—

i^ / » o

Semiconductor Group o

(9)

D orl/ano Hntlinoc

I U V I X U ^ V W i l l l l IVW

TO-220 AB Dimension in mm

oo

C-vl

Q Q > '.j

9.5

■i l/'N J V J

U 7 s~\

x /

?

0.75 ■

1 R/l

/ . ( U T

J

OO

CN

Lf >

. CO _

-1.05

? Ryl

i - i U T

-I \ u-

4.4

1 x

Jf, i

L 'N

05 1 _ L

CD LO

' LO

hO

0.5 2.4

*1 \

l

. . . ^ ____ n n 4

i y punufi uireuiun, uur r mux. u.u^

r ) \ <“l o ks t n i^> i « n

xj 'y ip1 im ii iii ly

3) max. 14.5 by dip tinning press burr max. 0.05

r\

-4i r \ i—

i^ / e o

Semiconductor Group

Obraz

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