2SK3454

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MOS FIELD EFFECT TRANSISTOR

2SK3454

SWITCHING

N-CHANNEL POWER MOS FET INDUSTRIAL USE

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

DESCRIPTION

The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

FEATURES

•Gate voltage rating ±30 V

•Low on-state resistance

RDS(on) = 0.63 Ω MAX. (VGS = 10 V, ID = 4.0 A)

•Low input capacitance

Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)

•Built-in gate protection diode

•Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current(DC) (TC = 25°C) ID(DC) ±7.0 A Drain Current(pulse) ^Note1 ID(pulse) ±21 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 30 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg −55 to +150 °C

Single Avalanche Current^Note2 IAS 7.0 A

Single Avalanche Energy^Note2 EAS 49 mJ

Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 125 V, RG = 25 Ω , VGS = 20 V→0 V

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3454 Isolated TO-220

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ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

Drain Leakage Current IDSS VDS = 250 V, VGS = 0 V 100 µA

Gate Leakage Current IGSS VGS = ±30 V, V^DS = 0 V ±10 µA

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 4.5 V

Forward Transfer Admittance | yfs| VDS = 10 V, ID = 4.0 A 1.0 S

Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 4.0 A 0.5 0.63 Ω

Input Capacitance Ciss VDS = 10 V 400 pF

Output Capacitance Coss VGS = 0 V 110 pF

Reverse Transfer Capacitance Crss f = 1 MHz 55 pF

Turn-on Delay Time Td(on) VDD = 125 V, ID = 4.0 A 11 ns

Rise Time Tr VGS(on) = 10 V 18 ns

Turn-off Delay Time Td(off) RG = 10 Ω 32 ns

Fall Time Tf 15 ns

Total Gate Charge QG VDD = 200 V 18 nC

Gate to Source Charge QGS VGS = 10 V 3.5 nC

Gate to Drain Charge QGD ID = 7.0 A 10 nC

Diode Forward Voltage VF(S-D) IF = 7.0 A, VGS = 0 V 1.0 V

Reverse Recovery Time Trr IF = 7.0 A, VGS = 0 V 250 ns

Reverse Recovery Charge Qrr di/dt = 50 A/µs 1.0 µC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25 Ω PG. 50 Ω

L

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG. RG

0 VGS

D.U.T.

RL

VDD

τ = 1 sµ Duty Cycle ≤ 1%

VGS Wave Form

ID Wave Form

VGS 10%

VGS(on) 90%

010%

ID

90%

td(on) tr td(off) tf 10%

τ

ID 0

ton toff

PG. 50 Ω

D.U.T.

RL

VDD

IG = 2 mA

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TYPICAL CHARACTERISTICS

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

ID - Drain Current - A

00 10 30 40 50 60

20 30

20

Pulsed VGS =10 V 10

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

Pulsed

0 4 8 12 16 20

VDS = 10 V 10

1

0.1

0.01

0.001

0.0001 100

Tch = −25˚C 25˚C 75˚C 125˚C 150˚C

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VGS(off) - Gate to Source Cut-off Voltage - V

VDS = 10 V ID = 1 mA

1 2 3 4 5

−50 0 50 100 150

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

Pulsed VDS = 10 V

| yfs | - Forward Transfer Admittance - S

ID - Drain Current - A 10 1

0.01 0.1

0.1

0.01 1 10

100 Tch = 150˚C

125˚C 75˚C 25˚C −25˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

- Drain to Source On-state Resistance - Ω

0 5 10 15 20

2 3

0 1

Pulsed

ID = 7.0 A 4.0 A 1.4 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

DS(on) - Drain to Source On-state Resistance - Ω

1

10 1

0.1 2

100 Pulsed

0

VGS = 10 V

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

RDS(on) - Drain to Source On-state Resistance - Ω

0−50 1

0.5

0 50 100 150

2

1.5

4.0 A VGS = 10 V

Pulsed

ID = 7.0 A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

ISD - Diode Forward Current - A

0 1.6

VSD - Source to Drain Voltage - V 1.2 0.8

0.4 Pulsed

0.1

0.01 1 10 100

0 V VGS = 10 V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

Ciss, Coss, Crss - Capacitance - pF

100.1 100 1000 10000

1 10 100 1000

VGS = 0 V f = 1 MHz

Coss

Crss

Ciss

SWITCHING CHARACTERISTICS

td(on), tr, td(off), tf - Switching Time - ns

10

10.1 1

100 1000

10 100

tf

tr

td(on)

td(off)

VDD = 125 V VGS = 10 V RG = 10 Ω

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

ISD - Diode Forward Current - A

trr - Reverse Recovery Time - ns

di/dt = 50 A/ s VGS = 0 V 1

0.1 10

1 10 100

1000

100

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VGS - Gate to Source Voltage - V

QG - Gate Charge - nC

0

0 5 10 15 20

100

50 150 200 250

4

2 0 8 6

VDS

14 12

10 VGS

ID = 7.0 A VDD = 200 V

125 V 50 V

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DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

dT - Percentage of Rated Power - %

0 20 40 60 80 100 120 140 160 0

20 40 60 80 100

TC - Case Temperature - ˚C

PT - Total Power Dissipation - W

00 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

10 20 30 40

FORWARD BIAS SAFE OPERATING AREA

1 10 100 1000

0.1

VDS - Drain to Source Voltage - V 100

10

1

Power Dissipation Limited 100

µs

100 ms 1 ms 3 ms 10 ms

PW = 10

µs

DC

ID(DC)

ID(pulse)

TC = 25˚C Single Pulse

R^DS(on) Limited (@V

GS = 10 V)

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - ˚C/W

10

0.01 0.1 1 100

Single Pulse

Rth(ch-C) = 4.17˚C/W Rth(ch-A) = 62.5˚C/W

★

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SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

L - Inductive Load - mH

IAS - Single Avalanche Current - A

1 10 100

1 10

VDD = 125 V VGS = 20 V → 0 V RG = 25 Ω Starting Tch = 25°C

IAS = 7.0 A

0.01 0.1

0.1

E_AS = 49 mJ

SINGLE AVALANCHE ENERGY DERATING FACTOR

Starting Tch - Starting Channel Temperature - ˚C

Energy Derating Factor - %

25 50 75 100

120

100

80

60

40

20

0 125 150

VDD = 125 V RG = 25 Ω VGS = 20 V → 0 V

IAS ≤ 7.0 A

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PACKAGE DRAWING (Unit: mm)

Isolated TO-220 (MP-45F)

1.Gate 2.Drain 3.Source 10.0±0.3

3.2±0.2 φ

15.0±0.3 3±0.1 12.0±0.213.5 MIN.

4±0.2

0.7±0.1 1.3±0.2 1.5±0.2

2.54 TYP.

1 2 3

2.5±0.1 0.65±0.1

4.5±0.2 2.7±0.2

Source Body Diode

Gate Protection Diode Gate

Drain

EQUIVALENT CIRCUIT

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

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The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

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