•crTVf , line.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005 FAX: (973) 376-8960
Silicon PNP Power Transistor 2SA1002
DESCRIPTION
• High Current Capability
• Collector-Emitter Breakdown Voltage- :V
(BR)cEO=-120V(Min.)
APPLICATIONS
• Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a=25'C)
PIN 1.BASE 2. BWIITTER
3. COLLECT OR (C AS E)
TO-3 package
SYMBOL
VCBO
VCEO
VEBO
Ic
PC
T,
Tstg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@TC=25'C
Junction Temperature
Storage Temperature
VALUE
-120
-120
-6
-12
120
150
-55-150 UNIT
V
V
V
A
W
'C
"C
4 • r
IE
v~
M t
•
r i..
•*••
/,
S kh, ,,4
V
DIM A B i"
D E
_a_
H K L N
v v
V - A - N — I
I
' 4U-Du — *
|*L-*
^L~SX a_^
(Tj^ r^
-L^l in
MIN 39 2530
7.80 O.SO t.40 10
5 11.33 1675 1940 4.0C"
30.CK?
430 -^
(
7 PL
/'
/ I
0 c i n
MAX 00
26.67 8.5Q I 10 1 . 60 92 46
1350
JI&LJ
1705~42(p _^_20_, 450
[
LK :
t
, Bi J
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. "
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Silicon PNP Power Transistor 2SA1002
ELECTRICAL CHARACTERISTICS Tj=25"C unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
vCE(sat)
ICBO
IEBO
hFE
fr
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Current-Gain — Bandwidth Product
CONDITIONS
lc= -30mA; IB= 0
lc=-1mA; IE=0
lE=-1mA; lc=0
lc= -8A; IB= -0.8A
Vce=-120V; !E=O
VEB= -6V; lc= 0
lc= -0.5A ; VC6= -5V
lc=-1A;VCE=-10V
MIN
-120
-120
-6
50 TYP.
40
MAX
-3.0
-50
-50
200 UNIT
V
V
V
V
M A
M A
MHz
