A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.
CHARACTERISTICS T
C= 25°C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CBO I C = 50 mA 48 V
BV CEO I C = 20 mA 25 V
BV EBO I E = 5 mA 3.5 4.0 --- V
I CBO V CB = 24 V 1.0 mA
h FE V CE = 10 V I C = 100 mA 20 100 ---
C OB V CB = 24 V f = 1.0 MHz 25 pF P G
ηηηη C
V CC = 24 V I CQ = 75 mA f = 960 MHz P OUT = 15 W
8.0
50
dB
%
NPN SILICON RF POWER TRANSISTOR
CBSL15
DESCRIPTION:
The ASI CBSL15 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz.
FEATURES:
• Internal Input Matching Network
• P G =8.0 dB at 15 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I C 2.5 A
V CBO 48 V
V CEO 30 V
V EBO 4.0 V
P DISS 29 W @ T C = 25 °C T J -65 °C to +200 °C
T STG -65 °C to +150 °C θθθθ JC 6.0 °C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10581
M INIMUM inches / mm
.115 / 2.92
.225 / 5.72 .075 / 1.91
.090 / 2.29 .720 / 18.29 B
C D E F G A
M AXIM UM
.085 / 2.16
.110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm
.125 / 3.18
H .355 / 9.02
DIM
K L I J
.004 / 0.10 .120 / 3.05
.230 / 5.84
.006 / 0.15 .130 / 3.30
.260 / 6.60 K 4X .025 R
.040x45°
.115
I .125 E .430 D
H G
F
J C
A B
2XØ.130
L
.160 / 4.06 .180 / 4.57
.980 / 24.89 .970 / 24.64
.355 / 9.02 .365 / 9.27
.365 / 9.27
