SGS-THOMSON
B Y T 71 ( F )-800
FAST RECOVERY RECTIFIER DIODES
FEATURES
■ HIGH VOLTAGE CAPABILITY
■ FAST AND SOFT RECOVERY
■ INSULATED PACKAGE : insulating voltage =
2000Vdccapacitance = 12 pF
DESCRIPTION
Single chip rectifier suited for power conversion and polarity protection applications.
This device is packaged in TO220AC and in ISOWATT220AC.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
IF(RMS) RMS on-state current 12 A
lF(AV) Average forward current 5 = 0.5
TO220AC Tc=130°C 6 A
ISOWATT220AC Tc=105°C 6
IFSM Surge non repetitive forward current tp=10ms sinusoidal
90 A
Tstg Tj
Storage and junction temperature range - 65 to + 150
- 65 to + 150 0 0 o o
Symbol Parameter BYT71- (F) Unit
100 200 400 600 800
VRRM Repetitive peak off-state voltage 100 200 400 600 800 V
August 1993 Ed : 2 1/5
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-c) Junction to case TO220AC 2.3 °C/W
ISOWATT220AC 4.9
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
|R ** Tj = 25°C Vr = Vr r m 20 |j.A
Tj = 100°C 1 mA
VF * Tj = 100°C Ip = 6 A 1.3 V
Tj = 25°C Ip = 6 A 1.4
Pulse te s t: * tp = 380 ps, duty cycle < 2 % tp = 5 ms, duty cycle < 2 %
RECOVERY CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
trr Tj = 25°C If = 1A d I F /d t = -15A/ps Vr = 30V
300 ns
To evaluate the conduction losses use the following equations : P = 115 x lF(AV) + 0 025 x If2(RMS)
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SGS-THOMSON
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B YT71(F)-800
Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor,average forward current.
Fig-3 : Forward voltage drop versus forward current (maximum values).
Fig-4 : Relative variation of thermal impedance junction to case versus pulse duration.
(TO 220 AC)
K=Zth(j-c)/Rth(j-c)
Fig-5 : Relative variation of thermal impedance junction to case versus pulse duration.
(ISOWATT220AC)
51 SGS-THOMSON
KaSM ILiraM M O Ei
3/5
Fig-6 : Non repetitive surge peak forward current versus overload duration.
(TO 220 AB)
0.001 0.01 0.1 1
Fig.8 : Average current versus ambient temperature, (duty cycle : 0.5) (TO 220 AB)
Fig.10 : Junction capacitance versus reverse voltage applied (Typical values).
C(pF)
1 10 100 1000
Fig.7 : Non repetitive surge peak forward current versus overload duration.
(ISOWATT220AB)
0.001 0.01 0.1 1
Fig.9 : Average current versus ambient temperature, (duty cycle : 0.5) (ISOWATT220AB)
Fig.11 : Recovery charges versus dlF/dt.
QRR(uC)
T T T T ___ I
I I I I I I I I
I F = I F ( a v )
d F d K _ A L
/iJ S ) _______
1____________________ ___ i i M i __________ _____ ____ ___
10 20 50 100 200 500
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B YT71(F)-800
Fig.12 : Peak reverse current versus dIF/dt.10 20 50 100 200 500
Fig.14 : Peak forward voltage versus dIF/dt.
Fig.13 : Dynamic parameters versus junction temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=100°C]
1.50 1.25 1.00
0.75 0.50 0.25
0.000 25 50 75 100 125 150
Fig.15 : Recovery time versus dIF/dt.
^7 SGS-THOMSON
M H E I O n C !
5/5