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BYT71F-100

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SGS-THOMSON

B Y T 71 ( F )-800

FAST RECOVERY RECTIFIER DIODES

FEATURES

■ HIGH VOLTAGE CAPABILITY

■ FAST AND SOFT RECOVERY

■ INSULATED PACKAGE : insulating voltage =

2000Vdc

capacitance = 12 pF

DESCRIPTION

Single chip rectifier suited for power conversion and polarity protection applications.

This device is packaged in TO220AC and in ISOWATT220AC.

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

IF(RMS) RMS on-state current 12 A

lF(AV) Average forward current 5 = 0.5

TO220AC Tc=130°C 6 A

ISOWATT220AC Tc=105°C 6

IFSM Surge non repetitive forward current tp=10ms sinusoidal

90 A

Tstg Tj

Storage and junction temperature range - 65 to + 150

- 65 to + 150 0 0 o o

Symbol Parameter BYT71- (F) Unit

100 200 400 600 800

VRRM Repetitive peak off-state voltage 100 200 400 600 800 V

August 1993 Ed : 2 1/5

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THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-c) Junction to case TO220AC 2.3 °C/W

ISOWATT220AC 4.9

ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

|R ** Tj = 25°C Vr = Vr r m 20 |j.A

Tj = 100°C 1 mA

VF * Tj = 100°C Ip = 6 A 1.3 V

Tj = 25°C Ip = 6 A 1.4

Pulse te s t: * tp = 380 ps, duty cycle < 2 % tp = 5 ms, duty cycle < 2 %

RECOVERY CHARACTERISTICS

Symbol Test Conditions Min. Typ. Max. Unit

trr Tj = 25°C If = 1A d I F /d t = -15A/ps Vr = 30V

300 ns

To evaluate the conduction losses use the following equations : P = 115 x lF(AV) + 0 025 x If2(RMS)

2/5 S Z J

SGS-THOMSON

*7 # iao(aMmui«(o)HOisg

(3)

B YT71(F)-800

Fig.1 : Average forward power dissipation versus Fig.2 : Peak current versus form factor,

average forward current.

Fig-3 : Forward voltage drop versus forward current (maximum values).

Fig-4 : Relative variation of thermal impedance junction to case versus pulse duration.

(TO 220 AC)

K=Zth(j-c)/Rth(j-c)

Fig-5 : Relative variation of thermal impedance junction to case versus pulse duration.

(ISOWATT220AC)

51 SGS-THOMSON

KaSM ILiraM M O Ei

3/5

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Fig-6 : Non repetitive surge peak forward current versus overload duration.

(TO 220 AB)

0.001 0.01 0.1 1

Fig.8 : Average current versus ambient temperature, (duty cycle : 0.5) (TO 220 AB)

Fig.10 : Junction capacitance versus reverse voltage applied (Typical values).

C(pF)

1 10 100 1000

Fig.7 : Non repetitive surge peak forward current versus overload duration.

(ISOWATT220AB)

0.001 0.01 0.1 1

Fig.9 : Average current versus ambient temperature, (duty cycle : 0.5) (ISOWATT220AB)

Fig.11 : Recovery charges versus dlF/dt.

QRR(uC)

T T T T ___ I

I I I I I I I I

I F = I F ( a v )

d F d K _ A L

/iJ S ) _______

1____________________ ___ i i M i __________ _____ ____ ___

10 20 50 100 200 500

4/5

/ = T SCS-THOMSON

^ 7 # KfflWIIILIOTMIKES

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B YT71(F)-800

Fig.12 : Peak reverse current versus dIF/dt.

10 20 50 100 200 500

Fig.14 : Peak forward voltage versus dIF/dt.

Fig.13 : Dynamic parameters versus junction temperature.

QRR;IRM[Tj]/QRR;IRM[Tj=100°C]

1.50 1.25 1.00

0.75 0.50 0.25

0.000 25 50 75 100 125 150

Fig.15 : Recovery time versus dIF/dt.

^7 SGS-THOMSON

M H E I O n C !

5/5

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