BFQ54

(1)

, U na.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

BFQ54

J V

MECHANICAL DATA Fig. 1 SOT122.

*

5,9 e

c

5

>-

5 .

^J

~<4x

i 8,E mi 1 1

1,52

( 4 x )

b

Dimensions in mm

-0,14

--•«-+-#•-- 6,35

8-32UNC

MgE

- 8.5

3.3 U-

3,25 2,80"

12,0

n.o —

metil

xBeO , ceramic

mix6,6

Torque on nut: min. 0.75 Nm diameter of clearance hole in heatsink: max. 4.2 mm (7.5 kg cm) mounting hole to have no burrs at either end.

max. 0.85 Nm de -burrings must leave surface flat; do not chamfer or (8.5 kg cm) countersink either end of the hole.

When locking is required an adhesive is preferred instead of a lock washer.

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134).

Collector-base voltage (open emitter) ~VCBO Collector-emitter voltage (open base) ~VCEO Emitter-base voltage (open collector) ~VEBO Collector current (DC) -l^

Total power dissipation up to Tmt, = 125 °C P(O( Storage temperature range T^g Operating junction temperature T;

THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink

R

th j-mb

H

th mb-h max.

max.

25 V 18 V 2 V 150 mA 2.2S W -65 to +150 °C max, 200 °C

28 K/W 0.6 K/W

NI Semi-C'oiNliKlon reserves the right lo change test conditions, parameter limit* ;md package dimensions \viih«rt notice

Information liinmhed by NJ Semi-Conductor* » believed to he both accurate and reliable ;il the lime of going In press. However N, I SeinK iiiiJutlurs .bsuincs in. responsibility fiw ^ny ern>rs-r mniuiiins Jiicov««J in its use MJ Stfini-<. i.nJtKl^rs cf •."'•>•"«

, n-,ri HUT', in vi-iifi ih.n il:ili)-;hteM ire Liirrenl hefore ulnciiii! , > r '

(2)

PNP 4 GHz wideband transistor

y v

BFQ54

CHARACTERISTICS

Tamb ~ 25 °C unless otherwise specified Collector cut-off current

I^E- 0 ; - V^{C B}- 1 5 V DC current gain

-lc- 150mA;-VCE = 15V

Transition frequency at f = 500 MHz (note 1) -l^c= 150mA;-V^CE= 15V

Collector capacitance at f - 1 MHz

Emitter capacitance at f = 1 MHz

i

^c

« i

^c

= 0; -v

^EB

= 0,5 v

Feedback capacitance at f = 1 MHz IC = O m A ; V^CE = 15V Collector-stud capacitance

Maximum unilateral power gain (S12 assumed to be zero) -1C = 120 mA; -VCE = IS V; f = 500 MHz

GUM * 10 log

Output voltage at dim = -60 dB (DIN 4500SB, para 6.3: 3-tone)

-ic

⁼

12°

^mA

; -

^V

CE " '

⁵

v;

V - Vp- 00atdai mi m = -60dB Vq = V0 -6 dB ; Vr = V0 -6 dB;

measured at f(p + q _ r)

fp = 795.25 MHz f q - 803.25 MHz

I^CBO

QUM tvp.

f

r

input 75 Q

= 805.25 MHz

- 793.25 MHz V0 typ.

J10200 n^ I U~l

10 nF JkQ

^

V^L

J_ 'c

5.5 T

^^^^.oo^u.(I- 1 -wv,^ 7sa

24 a

Note

1. Measured under pulse conditions.

240

Fig. 2 MATV-test circuit F - 40 to 860 MHz

50

hFE hFE

»T Cc C

e

Cre Ccs

min.

typ.

tvp.

typ.

25 75 4.5 GHz 2.0 pF 6.5 pF 1.3 pF 1.2 pF

16 dB

900 mV