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BCR133S

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BCR133S

Jul-12-2001 1

NPN Silicon Digital Transistor Array

 Switching circuit, inverter, interface circuit, driver circuit

 Two ( galvanic) internal isolated Transistors with good matching in one package

 Built in bias resistor (R1=10k, R2 =10k)

VPS05604

6

3 1

5 4

2

EHA07174

6 5 4

3 2 1

C1 B2 E2

C2 B1 E1

R1 R2 R1

R2 TR1

TR2

Type Marking Pin Configuration Package

BCR133S WCs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 50 V

50

Collector-base voltage VCBO

VEBO 10 Emitter-base voltage

Input on Voltage Vi(on) 20

100 mA

DC collector current IC

Ptot 250 mW

Total power dissipation, TS = 115 °C

Junction temperature Tj 150 °C

-65 ... 150

Storage temperature Tstg

Thermal Resistance

Junction - soldering point1) RthJS  140 K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

(2)

BCR133S

Jul-12-2001 2

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

V(BR)CEO - Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

-

50 V

- Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO 50 -

V(BR)EBO - - - V

Emitter-base breakdown voltage IE = 10 µA, IC = 0

- 100

ICBO Collector cutoff current

VCB = 40 V, IE = 0

nA -

mA

IEBO - 0.75

Emitter cutoff current VEB = 10 V, IC = 0

-

- -

30 -

hFE DC current gain 1)

IC = 5 mA, VCE = 5 V

V Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

VCEsat - - 0.3

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off) 0.8 - 1.5 V

Vi(on) 2.5 Input on Voltage

IC = 2 mA, VCE = 0.3 V

1 -

k

7 10

R1

Input resistor 13

- 1.1 1

Resistor ratio R1/R2 0.9

AC Characteristics

- 130 -

Transition frequency

IC = 10 mA, VCE = 5 V, f = 100 MHz

fT MHz

- Collector-base capacitance

VCB = 10 V, f = 1 MHz

3 - pF

Ccb

1) Pulse test: t < 300s; D < 2%

(3)

BCR133S

Jul-12-2001 3

Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20

0.0 0.2 0.4 0.6 V 1.0

VCEsat

10 0

10 1

10 2

mA

IC

DC Current Gain hFE = f (IC)

VCE = 5V (common emitter configuration)

10 -1 10 0 10 1 mA 10 2

IC

10 0

10 1

10 2

10 3

-

hFE

Input on Voltage Vi(on) = f (IC)

VCE = 0.3V (common emitter configuration)

10 -1 10 0 10 1 V 10 2

Vi(on)

10 -1

10 0

10 1

10 2

mA

IC

Input off voltage Vi(off) = f (IC)

VCE = 5V (common emitter configuration)

0.0 0.5 1.0 1.5 2.0 V 3.0

Vi(off)

10 -2

10 -1

10 0

10 1

mA

IC

(4)

BCR133S

Jul-12-2001 4

Total power dissipation Ptot = f (TS)

0 20 40 60 80 100 120 °C 150

TS

0 50 100 150 200 mW

300

Ptot

Permissible Pulse Load Ptotmax / PtotDC = f (tp)

10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0

tp

10 0

10 1

10 2

10 3

-

Ptotmax / PtotDC

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Permissible Pulse Load RthJS = f (tp)

10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0

tp

10 -1

10 0

10 1

10 2

10 3

K/W

RthJS

0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Cytaty

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