BCR133S
Jul-12-2001 1
NPN Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit, driver circuit
Two ( galvanic) internal isolated Transistors with good matching in one package
Built in bias resistor (R1=10k, R2 =10k)
VPS05604
6
3 1
5 4
2
EHA07174
6 5 4
3 2 1
C1 B2 E2
C2 B1 E1
R1 R2 R1
R2 TR1
TR2
Type Marking Pin Configuration Package
BCR133S WCs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
50
Collector-base voltage VCBO
VEBO 10 Emitter-base voltage
Input on Voltage Vi(on) 20
100 mA
DC collector current IC
Ptot 250 mW
Total power dissipation, TS = 115 °C
Junction temperature Tj 150 °C
-65 ... 150
Storage temperature Tstg
Thermal Resistance
Junction - soldering point1) RthJS 140 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCR133S
Jul-12-2001 2
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
V(BR)CEO - Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
-
50 V
- Collector-base breakdown voltage
IC = 10 µA, IB = 0
V(BR)CBO 50 -
V(BR)EBO - - - V
Emitter-base breakdown voltage IE = 10 µA, IC = 0
- 100
ICBO Collector cutoff current
VCB = 40 V, IE = 0
nA -
mA
IEBO - 0.75
Emitter cutoff current VEB = 10 V, IC = 0
-
- -
30 -
hFE DC current gain 1)
IC = 5 mA, VCE = 5 V
V Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat - - 0.3
Input off voltage
IC = 100 µA, VCE = 5 V
Vi(off) 0.8 - 1.5 V
Vi(on) 2.5 Input on Voltage
IC = 2 mA, VCE = 0.3 V
1 -
k
7 10
R1
Input resistor 13
- 1.1 1
Resistor ratio R1/R2 0.9
AC Characteristics
- 130 -
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT MHz
- Collector-base capacitance
VCB = 10 V, f = 1 MHz
3 - pF
Ccb
1) Pulse test: t < 300s; D < 2%
BCR133S
Jul-12-2001 3
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
0.0 0.2 0.4 0.6 V 1.0
VCEsat
10 0
10 1
10 2
mA
IC
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 mA 10 2
IC
10 0
10 1
10 2
10 3
-
hFE
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 V 10 2
Vi(on)
10 -1
10 0
10 1
10 2
mA
IC
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0.0 0.5 1.0 1.5 2.0 V 3.0
Vi(off)
10 -2
10 -1
10 0
10 1
mA
IC
BCR133S
Jul-12-2001 4
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0 50 100 150 200 mW
300
Ptot
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp
10 0
10 1
10 2
10 3
-
Ptotmax / PtotDC
D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0
tp
10 -1
10 0
10 1
10 2
10 3
K/W
RthJS
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0