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GENERAL DESCRIPTION

High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V

VCEO Collector-emitter voltage (open base) - 450 V

IC Collector current (DC) - 0.5 A

ICM Collector current peak value - 1 A

Ptot Total power dissipation Tmb ≤ 60 ˚C - 20 W

tf Fall time 0.4 - µs

PINNING - SOT82 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 emitter 2 collector 3 base

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V

VCEO Collector-emitter voltage (open base) - 450 V

IC Collector current (DC) - 0.5 A

ICM Collector current peak value - 1 A

IB Base current (DC) - 0.2 A

IBM Base current peak value - 0.3 A

-IBM Reverse base current peak value 1 - 0.3 A

Ptot Total power dissipation Tmb ≤ 60 ˚C - 20 W

Tstg Storage temperature -65 150 ˚C

Tj Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Rth j-mb Junction to mounting base - - 4.5 K/W

Rth j-a Junction to ambient in free air 100 - K/W

1 2 3

b

c

e

1 Turn-off current.

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STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICES Collector cut-off current 2 VBE = 0 V; VCE = VCESMmax - - 100 µA

ICES VBE = 0 V; VCE = VCESMmax; - - 1.0 mA

Tj = 125 ˚C

IEBO Emitter cut-off current VEB = 5 V; IC = 0 A - - 1.0 mA

VCEOsust Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V

L = 25 mH

VCEsat Collector-emitter saturation voltages IC = 0.1 A; IB = 10 mA - - 0.8 V

VCEsat IC = 0.2 A; IB = 20 mA - 1.0 V

VBEsat Base-emitter saturation voltage IC = 0.2 A; IB = 20 mA - 1.0 V

hFE DC current gain IC = 50 mA; VCE = 5 V - 50 -

hFE IC = 300 mA; VCE = 5 V 25 50 100

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

fT Transition frequency IC = 0.2 A; VCE = 10 V; f = 1 MHz 20 - MHz

Switching times (resistive load circuit) ICon = 0.2 A; IBon = 20 mA;

-IBoff = 40 mA; VCC = 250 V

ton Turn-on time 0.4 0.7 µs

ts Turn-off storage time 3.5 5.0 µs

tf Turn-off fall time 0.4 - µs

tf Turn-off fall time Tmb = 95 ˚C - 1.3 µs

Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust.

+ 50v 100-200R

Horizontal

Vertical Oscilloscope

1R 30-60 Hz 6V

300R

VCE / V min

VCEOsust IC / mA

100 200 250

0

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Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 150 V; tp = 20 µs; δ = tp / T = 0.01.

RB and RL calculated from ICon and IBon requirements.

Fig.4. Switching times waveforms with resistive load.

Fig.5. Normalised power dissipation.

PD% = 100⋅PD/PD 25˚C = f (Tmb)

Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE

Fig.7. Typical collector-emitter saturation voltage.

VCEsat = f(IB); parameter IC

Fig.8. Typical base-emitter saturation voltage.

VBEsat = f(IB); parameter IC

tp T

VCC

R

R

T.U.T.

0 VIM

B

L

0.01 0.1 1

IC / A

hFE BUW14

1000

100

10

1

Tj = 25 C Tj = 125 C

5V

1V

IC

IB

10 %

10 % 90 % 90 %

ton toff

ts

tf

IBon

-IBoff

ICon

tr 30ns

0.001 0.1

IB / A

VCESAT / V BUW14

10

1

0.1

0.01

0.01 1.0

0.2 A

0.1 A

IC=0.05 A

Tj = 25 C Tj = 125 C

0 20 40 60 80 100 120 140

Tmb / C

PD% Normalised Power Derating

120 110 100 90 80 70 60 50 40 30 20 10 0

0 0.04 0.08 0.12 0.16 0.2

IB / A

VBESAT / V BUW14

1

0.9

0.8

0.7

0.6

0.5

0.4

IC=

50 mA 100 mA 200 mA Tj = 25 C

Tj = 125 C

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Fig.9. Forward bias safe operating area.

(1) Ptot max line.

(2) Second-breakdown limits.

I Region of permissible DC operation.

II Permissible extension for repetitive pulse operation.

III Area of permissible operation during turn-on in single transistor converters, provided RBE≤ 100 Ω and tp ≤ 0.6 µs.

IV Repetitive pulse operation in this region is permissible provided VBE≤ 0 and tp ≤ 2 ms.

Fig.10. Transient thermal impedance.

Zth j-mb = f(t); parameter δ = duty cycle.

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MECHANICAL DATA

Dimensions in mm Net Mass: 0.8 g

Fig.11. SOT82; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT82 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

4.58

2.54 max 1)

1.2 2.8

2.3

3.1 2.5

1 2 3

0.88 max

2.29 15.3

min 11.1 max 3.75

7.8 max

1) Lead dimensions within this zone uncontrolled.

0.5 mounting

base

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DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1995

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

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