ISSRNS 2012: Abstracts / Synchrotron Radiation in Natural Science Vol. 11, No 1 – 2 (2012) P 25
DAMAGE OF TWO-COMPONENT MATERIALS SUCH AS GaAs, ZnO, SiO
2CREATED BY ULTRA-SHORT VUV LASER PULSES
D. Klinger1∗, R. Sobierajski1, J. Pelka1, E. Lusakowska1, D. ˙Zymierska1, W. Wierzchowski2, K. Wieteska3, T. Balcer2, J. Chalupsk´y4, V. H´ajkov´a4, T. Burian4, A.J. Gleeson6, L. Juha4,
K. Tiedtke7, S. Toleikis7, L. Vyˇs´ın4, H. Wabnitz7, and J. Gaudin5
1Institute of Physics, PAS, 32/46, Al. Lotnik´ow Str, 02–668 Warsaw, Poland
2Institute of Atomic Energy POLATOM, 05–400 ´Swierk-Otwock, Poland
3Institute of Electronic Materials Technology, 133, W´olczy´nska Str, 01–919 Warsaw, Poland
4Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague 8, Czech Republic
5Eropean XFEL, DESY, Notkestr., 85 D–22607 Hamburg, Germany
6CCRLC Daresbury Laboratory, Warrington, Cheshire WA4 4AD, United Kingdom
7HASYLAB/DESY, Notkestr., 85 D–22607 Hamburg, Germany
∗e-mail : dorota.klinger@ifpan.edu.pl
The investigations of the basic processes taking place in the two-component materials affected by ultra-short laser pulses of VUV range are presented.
Those sources give new possibilities for studying matter structure and physical processes dynamics due to a specific combination of radiation parame- ters — photon energy, ultra-short pulse time and a high power of laser beam. Radiation intensity values many times higher than the values obtained so far allow obtaining an extreme state of matter — warm and dense plasma. Shortening pulse time to fem- toseconds caused a change of time frame for phe- nomena occurring in material — chemical reactions, phase changes as well as near-surface processes in a time frame comparable to periods of natural atom oscillation [1, 2].
First experiments were already carried out, using free-electron-laser for irradiating materials at an experimental station in DESY/Hamburg (results under preparation). A further phase of experiments, which will compare physical processes occurring in materials irradiated by VUV range radiation of time pulse varied from a few up to several femtoseconds generated by free-electron-lasers was conducted in Spring8/Osaka. In order to compare optical pa- rameters (among others: absorption length, irradia- tion diffusion path) ablation experiments, using sin- gle femtosecond pulses of a few up to a few dozen nanometers wavelength.
The present work concentrates on the abla- tion dynamics in materials, GaAs, SiO2 and ZnO.
For example ZnO is an important wide-bandgap semiconductor, which has many applications, such as piezoelectric transducers and transparent con- ducting films. It has received extensive atten- tion because of the technological applications in
short-wavelength light-emitting devices and semi- conductor spin electronics [3]-[6].
Observations of ablation final result by using compatible methods will allow determining dynam- ics of ablation process in micron scale. The struc- tural change in the near-surface layer by X-ray diffraction and reflectometry and structure mor- phology, ablation crater depth and structures cre- ated by hydrodynamic movement height study will be carried out using polarizing-interference micro- scope and atomic force microscope.
Knowing the phenomena occurring in materials under influence of ultra-short radiation pulses of an extreme UV range, explanation of crystal matter change dynamics for femtosecond pulses could make a base for anticipating results of attosecond pulses influence.
References
[1] S.K. Sundaram, E. Mazur, “Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses,” Nature Mater. 1 (2002) 217.
[2] L. Jiang, H.L. Tsai, “Energy transport and material removal in wide bandgap materials by a femtosecond laser pulse,” Int. J. Heat Mass Tran. 48 (2005) 487.
[3] T. Monteiro, C. Boemare, M.J. Soares, E. Rita, E. Alves, J. Appl. Phys. 93 (2003) 8995.
[4] D.C. Look, D.C. Reynolds, J.W. Hemsky, R.L. Jones, J.R. Sizelove, Appl. Phys. Lett. 75 (1999) 811.
[5] D.C. Look, Mater. Sci. Eng. B 80 (2001) 383.
[6] H. Yoshikawa, S. Adachi, Jpn. J. Appl. Phys. 36 (1997) 6237.
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