MOS FIELD EFFECT TRANSISTOR
2SK3060
SWITCHING
N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 13 mΩ MAX. (VGS = 10V, ID = 35A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0V, ID = 35A)
• Low Ciss: Ciss = 2400pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A= 25 °C)
Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V
Drain Current (DC) ID(DC) ±70 A
Drain Current (Pulse) Note1 ID(pulse) ±210 A Total Power Dissipation (TC = 25°C) PT 70 W Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note2 IAS 35 A
Single Avalanche Energy Note2 EAS 122.5 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 V → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3060 TO-220AB
2SK3060-S TO-262
2SK3060-ZJ TO-263
2SK3060-Z TO-220SMDNote Note This package is produced only in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
★
ELECTRICAL CHARACTERISTICS (T
A= 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
RDS(on)1 VGS = 10V, ID = 35A 11 13 mΩ
Drain to Source On-state Resistance
RDS(on)2 VGS = 4.0V, ID = 35A 16 20 mΩ
Gate to Source Cut-off Voltage VGS(off) VDS = 10V, ID = 1mA 1.0 1.5 2.0 V
Forward Transfer Admittance | yfs| VDS = 10 V, ID = 35 A 15 50 S
Drain Leakage Current IDSS VDS = 60V, VGS = 0V 10 µA
Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V ±10 µA
Input Capacitance Ciss 2400 pF
Output Capacitance Coss 700 pF
Reverse Transfer Capacitance Crss
VDS = 10V VGS = 0V f = 1MHz
280 pF
Turn-on Delay Time td(on) 30 ns
Rise Time tr 600 ns
Turn-off Delay Time td(off) 140 ns
Fall Time tf
ID = 35A VGS = 10V VDD = 30V RG = 10Ω
450 ns
Total Gate Charge QG 50 nC
Gate to Source Charge QGS 7.5 nC
Gate to Drain Charge QGD
ID = 70A VDD = 48V VGS = 10V
18 nC
Body Diode Forward Voltage VF(S-D) IF = 70A, VGS = 0V 1.0 V
Reverse Recovery Time trr 55 ns
Reverse Recovery Charge Qrr
IF = 70A, VGS = 0V
di/dt = 100A/µs 75 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω PG. 50 Ω
L
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. RG
0 VGS
D.U.T.
RL
VDD
τ = 1 sµ Duty Cycle ≤ 1%
VGS Wave Form
ID Wave Form
VGS 10%
90%
010%
ID
90%
90%
td(on) tr td(off) tf 10%
τ
ID 0
ton toff
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
★
TYPICAL CHARACTERISTICS (T
A= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TC - Case Temperature - °C
dT - Percentage of Rated Power - %
0 25 50 75 100 125 150 175 200 20
40 60 80 100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - °C
PT - Total Power Dissipation - W
0 25 50 75 100 125 150 175 200 140
120
100
80
60
40
20
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID - Drain Current - A
1.0
0.1 10 100 1000
1.0 10 100
0.1
100 ms
TC = 25˚C Single Pulse
RDS(on) Limited(@V
GS= 10V) PW
= 10 µs 100µs 10 1 ms
ms
ID(DC)=70 A
DC Dissipation Limited ID(pulse)=210 A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
100
0.01 0.1 1 10 1000 10000
1 m 10 m 100 m 1 10 100 1000
10µ 100µ
Single Pulse
Rth(ch-C)= 1.79 ˚C/W Rth(ch-A)= 83.3 ˚C/W
★
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
0.1 1 10 100
0 1 2 3 4 5
Pulsed VDS = 10 V TA = 125˚C
75˚C 25˚C
−25˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
0 1.0 1.5 2.0
200 250
0.5
Pulsed
VGS = 10 V
VGS = 4.0 V 150
100
50
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
| yfs | - Forward Transfer Admittance - S VDS = 10 V
Pulsed
0.1 1.0
1 10 100
10 100
0.1
Tch = −25˚C 25˚C 75˚C 125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
0 20
10 30
20 10
Pulsed
ID = 35 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
50
1 0.1
75
10 100 1000
0 25
Pulsed
VGS = 10 V VGS = 4.0 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 10 V ID = 1 mA
−50 0 50 100 150
0 1.0 2.0
1.5
0.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance -mΩ
0 −50 10
0 50 100 150
ID = 35 A 20
40
30 VGS = 4.0 V
10 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1.0
ISD - Diode Forward Current - A
0 1.5
VSD - Source to Drain Voltage - V 0.5
Pulsed
VGS = 10 V
0.1 1 10 100 1000
VGS = 0 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
10 0.1 100 1000 10000
1 10 100
VGS = 0 V f = 1 MHz Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
0.1 10 100 1000 10000
1 10 100
VDD = 30 V VGS = 10 V RG = 10 Ω
td(off)
td(on)
tr
tf
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
IF - Drain Current - A
trr - Reverse Recovery Time - ns
di/dt = 100 A / VGS = 0 V
µs
1 0.1 10
1 10 100
1000
100
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
0 20 40 60 80
20
10 50
40
30
2 4 6 8
0 VDD = 48 V
30 V 12 V
12 14 16 18
10 ID = 70 A
VDS
VGS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - H
IAS - Single Avalanche Current - A
1.0 10 100
1 m 10 m
RG = 25 Ω VDD = 30 V VGS = 20 V → 0 V Starting Tch = 25 °C
IAS = 35 A
10µ 100µ
0.1
EAS = 122.5
mJ
SINGLE AVALANCHE ENERGY DERATING FACTOR
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
25 50 75 100
160
140
120
100
80
60
40
20
0 125 150
VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 35 A
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25) 2)TO-262 (MP-25 Fin Cut)
3)TO-263 (MP-25ZJ) 4)TO-220SMD (MP-25Z) Note
EQUIVALENT CIRCUIT
4.8 MAX.
1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3
10.6 MAX.
10.0
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP. 2.54 TYP.
5.9 MIN.6.0 MAX. 15.5 MAX.12.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
φ 4.8 MAX.
1.Gate 2.Drain 3.Source 4.Fin (Drain) 1 2 3
(10) 4
1.3±0.2
0.75±0.3
2.54 TYP. 2.54 TYP.
8.5±0.212.7 MIN.
1.3±0.2
0.5±0.2 2.8±0.2
1.0±0.5
(10)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
1 2 3
5.7±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2 (0.5R)
(0.8R)
1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.7±0.2
Body Diode Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage
Note This package is produced only in Japan.
(10)
1.4±0.2
1.0±0.5
2.54 TYP. 2.54 TYP.
8.5±0.2
1 2 3
3.0±0.5
1.1±0.4
4
2.8±0.2
4.8 MAX.
1.3±0.2
0.5±0.2 (0.5R)
(0.8R)
1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.0±0.3
★
M8E 00. 4 The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.
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(Note)
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