BUX10
SGS-THOMSON
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HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
DESCRIPTION
The BUX10 is a silicon multiepitaxial planar NPN ransistor in Jedec TO-3 metal case, intended for -se in switching and linear applications in military and industrial equipment.
TO-3
ABSOLUTE M AXIM UM RATING S
S ym bo l P a ra m e te r V a lu e U nit
V C B O Collector-base Voltage ( lE = 0 ) 160 V
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Collector-emitter Voltage ( Vb e = - 1.5 V) 160 V
V c E O Collector-emitter Voltage (Ib = 0 ) 125 V
Ve b o Emitter-base Voltage (lc = 0) 7 V
lc Collector Current 25 A
I CM Collector Peak Current (tp = 1 0 ms) 30 A
Ib Base Current 5 A
P t o t Total Power Dissipation at T case < 25 °C 150 W
T s tg Storage Temperature - 65 to 200 °C
T, Junction Temperature 200 °C
November 1988 1/4
BUX10
THERM AL DATA
H t h j-C i Thermal Resistance Junction-case Max 1.17 °C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ‘C unless otherwise specified)
S ym b o l P a ra m e te r T e s t C o n d itio n s M in. Typ. M ax. U n it
Iceo Collector Cutoff Current
(1B — 0) Vce =100 V 1.5 mA
Icex Collector Cutoff Current V CE = 160 V Tcase = 125 °C
V BE = - 1 . 5 V 1.5 mA
VCE = 1 6 0 V V BE = - 1.5 V 6 mA
Iebo Emitter Cutoff Current
(lc = 0) V EB = 5 V 1 mA
VcEO(sus)* Collector-emitter Sustaining
Voltage lc = 200 mA 125 V
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Emitter-base Voltage (lc = 0) Ie= 50 mA 7 V
VcE(sat)* Collector-emitter Saturation l c = 10 A l 8 = 1 A 0.3 0.6 V
Voltage lc = 2 0 A l B = 2 A 0.7 1.2 V
VBE(sat)* Base-emitter Saturation
Voltage l c = 20 A l B = 2 A 1.6 2 V
hfE * DC Current Gain lc = 10 A Vce = 2 V 20 60
lc = 2 0 A Vce= 4 V 10
U/b Second Breakdown Collector V Ce= 30 V t = 1 s 5 A
Current Vce= 48 V t = 1 s 1 A
f T Transition Frequency lc = 1 A
f = 10 MHz Vce= 15 V 8 MHz
ton Turn-on Time (fig. 2) l c = 2 0 A
Vcc = 30 V Ib i = 2 A 0.5 1.5 gs
t . Storage Time (fig. 2) lc = 2 0 A
CD II I CD N> > 0.6 1.2 gs
t f Fall Time (fig. 2) V cc = 30 V 0.15 0.3 gs
Clamped Es/b V c i a m p = 1 2 5 V
Collector Current (fig. 1) L = 500 pH 20
* Pulsed : pulse duration = 300 gs, duty cycle <2% .
Safe Operating Areas. Derating Curves.
0 50 100 150 Tc a s e CC>
2/4 C Z J
SGS-THOMSON
1 MUCnOUJKinUXHIM
BUX10
Thermal Transient Response.
Collector-emitter Saturation Voltage.
0 1 2 3 4 %<»>
Base-emitter Saturation Voltage.
G-4044
DC Current Gain.
G-4041
6-4043
i z n
1h F F = ' °
I 30*C
2• c 5*C \
K z r -
W 1 10 !C(A)
Saturated Switching Characteristics.
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7 SCS-THOMSON
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3/4
BUX10
Saturated Switching Characteristics.
Collector-base Capacitance. Clamped Reverse Bias Safe Operating Area.
1 10 K>? VCB(V)
G-40*9/l
Figure 1 : Clamped ES/t> Test Circuit. Figure 2 : Switching Times Test Circuit (resitive load).
4/4 r r z
SGS-THOMSON
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