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BUL52AFI

LAB SEME

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97

ADVANCED

DISTRIBUTED BASE DESIGN HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE

• FAST SWITCHING

• HIGH ENERGY RATING

Designed for use in electronic ballast applications

FEATURES

• Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.

• Ion implant and high accuracy masking for tight control of characteristics from batch to batch.

• Triple Guard Rings for improved control of high voltages.

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage (I

B

= 0) V

EBO

Emitter – Base Voltage (I

C

= 0) I

C

Continuous Collector Current I

C(PK)

Peak Collector Current

I

B

Base Current

P

tot

Total Dissipation at T

case

= 25°C

T

stg

Operating and Storage Temperature Range

1000V 500V

10V 6A 10A 2.5A 45W –55 to 150°C MECHANICAL DATA

Dimensions in mm

1 2 3

15.1

10.2

6.3

3.6 Dia.

1.3

14.0

0.85

2.54 2.54

ISOLATED TO220

Pin 1 – Base Pin 2 – Collectorn Pin3 – Emitter

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

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BUL52AFI

LAB SEME

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97

Parameter Test Conditions Min. Typ. Max. Unit

VCEO(sus) V(BR)CBO V(BR)EBO ICBO ICEO IEBO

hFE*

VCE(sat)*

VBE(sat)*

ft Cob

Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut–Off Current Collector – Emitter Cut–Off Current Emitter Cut–Off Current

DC Current Gain

Collector – Emitter Saturation Voltage

Base – Emitter Saturation Voltage

Transition Frequency Output Capacitance

500 1000

10

10 100 100 10 100

18 30

12 15

5 9

0.05 0.1

0.1 0.2

0.3 0.8

0.8 1.0

0.9 1.2

20 45

V

µA µA µA

V

V

MHz pF IC= 10mA

IC= 1mA IE= 1mA VCB= 1000V

TC = 125°C IB= 0 VCE= 500V VEB= 9V

IC= 0 TC = 125°C IC= 0.1A VCE= 5V IC= 1A VCE= 5V IC= 2.5A VCE= 1V

TC = 125°C IC= 100mA IB= 20mA IC= 1A IB= 0.5A IC= 2.5A IB= 0.5A IC= 1A IB= 0.2A IC= 2.5A IB= 0.5A

IC= 0.2A VCE= 4V VCB= 20V f = 1MHz

ELECTRICAL CHARACTERISTICS

(Tcase = 25°C unless otherwise stated)

* Pulse test tp= 300µs , δ< 2%

ELECTRICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

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BUL52AFI

LAB SEME

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97

DC Current Gain Collector-Emitter Saturation Voltage

Forward Bias Safe Operating Area

(4)

BUL52AFI

LAB SEME

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 3/97

DC Current Gain Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage

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