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BU406D

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* 7 1 G*[M)[l[LiOT(Q«S BU407D/BU408D

HORIZONTAL TV DEFLECTORS

DESCRIPTIO N

The BU406D. BU407D. and BU408D are silicon pla­

nar epitaxial NPN transistors with integrated dam­

per diode, in Jedec TO-220 plastic package. They are fast switching, high voltage devices for use in horizontal deflection output stages of MTV receivers with 110" CRT.

The BU406D and BU408D are primarily intended for large screen, while the BU407D is for medium and small screens.

IN T E R N A L SCH EM ATIC D IAG RAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value

BU406D BU407D BU408D Unit

V c B O Collector-base Voltage ( Ie= 0) 400 330 400 V

V c E V Collector-emitter Voltage ( V Be= - 1-5V) 400 330 400 V

Ve b o Emitter-base Voltage (lc = 0) 6 V

• c Collector Current 7 A

c m Collector Peak Current (repetitive) 10 A

ICM Collector Peak Current (tp = 10ms) 15 A

b Base Current 4 A

P tot Total Power Dissipation at T case < 25°C 60 W

Tstg Storage Temperature - 6 5 to 150 °C

Ti Junction Temperature 150 °C

December 1988 1/5

(2)

THERMAL DATA

Rth j-case Thermal Resistance Junction-case Max 2.08 °C/W

Rfh j-amb Thermal Resistance Junction-ambient Max 70 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IcEV Collector Cutoff Current for BU406D and BU408D (VBE — 1.5V) VCE = 400V

for BU407D

15 mA

VCE = 330V 15 mA

Iebo Emitter Cutoff Current (lc = 0)

>CDIICD

>

400 mA

VcE(sat)* * Collector-emitter Saturation for BU406D and BU407D

Voltage lC =5A

for BU408D

lB = 0.65A 1 V

o II CD > lB = 1.2A 1 V

VBE(sat)* Base-emitter Saturation for BU406D and BU407D

Voltage lc = 5A

for BU408D

lB = 0.65A 1.3 V

lc =6A lB = 1.2A 1.5 V

f l Transition Frequency lc = 0.5A VCE = 10V 10 MHz

toff Turn-off Time for BU406D and BU407D lc =5A

for BU408D

iBend — 0.65A 0.75 ps

<CDII_o ^Bend = 1-2A 0.5 gs

U/b Second Breakdown Collector

Current VCE = 40V t = 10ms 4 A

Vf Diode Forward Voltage If = 5A 1.5 V

* Pulsed : pulse duration = 300ps, duty cycle = 1.5%.

DC Current Gain. Collector-emitter Saturation Voltage.

2/5

r z

7 SGS-THOMSON

* 7 1 M C M H JB nM M C S

(3)

Base-emitter Saturation Voltage.

VB E ( s a t) (mV)

1600

1200

8 0 0

4 0 0

0

1 0 ' K>3 Ic (m A )

Forward Voltage.

G- 2656

SW ITCHING TIM ES

TEST CIRCUIT (FALL, STORAGE AND TURN-OFF TIME)

L1 Horizontal hold coil : Pins 1-2 = 75 turns 0 0.2mm ; R = 1 5Q : L min = 0.62mH

Core = siferrit B 62120 25x4x2 Pins 2-3 = 293 turns 0 0.2mm ; R = 4.8Q ; L max = 4.1 mH

L2 Horizontal yoke = 200jjH

T1 Driver transformer: Pins 1-2 = 125 turns 0 0.2mm ;

Gap = 0.12mm ; Core = 3E3 double E 19x15x5 Pins 3-4 = 25 turns 0 0.4mm ;

T2 EHT transformer manufacturer ARCO type 249.065/035 R = 270f t for BU406D and BU407D

R = 180Si for BU408D

r z

7 SGS-THOMSON

“ 7 # MCMBaentawM

3/5

(4)

Waveforms

>B

Fall and storage time

T u r n - o ff tim e is t h e tim e fo r t h e c o lle c to r c u r r e n t 1E to d e c re a s e to 100m A a f t e r t h e c o lle c to r to e m itte r v o lta g e VEE h a s r is e n 3V in t o i t s fly b a c k e x c u rs io n S -0 8 5 7

Turn-off time

A P P L IC A T IO N INFO R M ATIO N

Two examples are given of the BU406D and BU407D in conventional MTV horizontal deflection circuits.

BU406D - application circuit for 17” to 24” - 1 1 0' - 28 mm neck picture tubes.

• N1 = 125 turns 0 0.3mm ; N2 = 25 turns 0 0.6mm ; GAP = 0.12mm ; CORE = DOUBLE E 19x5x8 mm ; FERRITE 3E1 TYPE

r = Z

SGS-THOMSON

“ ■7# HHCRHiLJieinaoiDct 4/5

(5)

A P P L IC A T IO N IN FO R M ATIO N (continued)

BU407D - application circuit for 12" to 17” -1 1 0 ’ - 28mm neck picture tubes (drive supply voltage = 10.8V).

* N1 = 90 turns 0 0.3mm ; N2 = 30 turns 0 0.6mm ; GAP = 0.12mm ; CORE = DOUBLE E 19x5x8 mm ; FERRITE 3E1 TYPE

BU407D - application circuit for 12” to 17” - 110‘ - 28mm neck picture tubes, (driver supply voltage = 10.8V).

* N1 = 9 0 turns 0 0.3mm : N2 = 30 turns 0 0.6mm ; GAP = 0.12mm ; CORE = DOUBLE E 19x5x8mm ; FERRITE 3E1 TYPE

SGS-THOMSON

MlCMMLOCmMICS

5/5

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