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2N6765

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(l£.ii,£.u <^s.mi-dondactoi Lpioducti, Line,

£s tj

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

2N6765/2N6766

N-Channel Power MOSFETs, 30 A,150 V/200 V

Description

Tries* devices are n-channel. enhancement mode, power MOSFETs designed especially for high power, high sp«ed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid driver and high energy pulse circuits.

VQS Hated at ±80 V

Silicon Gate lor Fast Switching Sp«ed»

loss, RDs<an> Specified at Elevated Temperature) Rugged

Low Drive Requirement*

Eaie of Paralleling Maximum Rating*

2N6765 2N6766

Symbol VDSS VDGR

Vas Tj, T8ts

TL

Characteristic Drain to Source Voltage Drain to Gate Voltage Rss-1 MSI

Qate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature tor Soldering Purposes, 1/16* From Case for 10 a

hating 2N8768

200 200

±20 -55 to +150

300

Rating 2N6765 150 150

120 -55 to +150

300

Unit V V

V

•c

•c

Maximum On-State Characteristics fusion)

b

IOM

Static Drain-to-Source On Resistance Drain Currant

Continuous at TC - 25°C Continuous at Tc - loo'C Pulsed

0.065

30

eo

192

0-12

25 16 SO2

Ji

A

Maximum Thermal Characteristics Rsuc

PC

Thermal Resistance, Junction to Case Total Power Dissipation at Tc - 25'C

at Tc-100-C Linear Derating Factor

0.85

150 60 1.2

0.83

150 60 1.2

•c/w

W

wrc

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

(2)

2N6765/2N6766

Electrical Characteristics (Tc - 25"C unless otherwise noted)

Symbol Characteristic Uln Max Unit

1

Text Conditions

Oft Characteristic*

V(BH]DSS

loss

IC6S

Drain Sourca Breakdown Voltage 2N6766

2N8765

Zero Gate Voltage Drain Currant

Gate-Body Leakage Current

2002 150*

1 4

±100 V

mA

nA

Ves-0 V, ID -i.O mA

VM - Hated VDSS, VGS - o v VQS = Rated VDSs,

VGS - o v. Tc - 125'c

V

GS

-*20 V, V

D3

-0 V On Charact«rl*lle<

V<3S(th) R08tan)

VDS(M)

9l>

Gate Threshold Voltage

Static Drain-Source On-Raslstance1

2N6798 2N6765 2N6766 PN6765

Drain-Source On-Voltage1

2N6766 2N6765

Forward Transccnductance1

2.0

9,0

4.0

O.OB5 0.12 0.1 63 0.218

2.7 3.0 27

V

n

V

S(U)

I0 -1.0 mA. VDS.-VGS

Vos - 10 v,

I0=19 A I0-16 A

lo=ie A. TC = 12S'C b-16 A. TC-1ZS*C Voa-10 V Ip - 30 A ID- 25 A

VoS-15 V, ID -19 A Dynamic Characteristic*

c

is

,

C(|S9

Input Capacitance Output Capacitance Reverse Transfer Capacitance

100Q 460 1SQ

3000 1200 500

PF pF PF

VDJ = 25 V, VGS - 0 V 1=1.0 MHz

Switching Characteristics Oc-25*C, Figure* 9. 10) tdfon)

t,

•d{l)H) t(

QB

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

Total Gate Ohtirgft

35 100 125 100

iao

2

ns ns ns na nC

V00 = 9S V, ID -19 A VGS -10 V, HGEN = 4.7 il Ros-4-7 J2

VQS-10 V, ID -38 A VDD-IOO V

Electrical Characteri«tlc» (Cont.) (Tc - 25"C unless otherwise noted)

Symbol [ Cn»r«ct«rl»tle Mln Typ Max Unit Test Conditions

Source-Drain Dlod* Characterlatlci Is

ISM

VSD

^ QRR

Continuous Source Currant 2N6766

2N6765

Pulsed Source Current 2N6766

2N6765

Diode Forward Voltage 2N6766

2NS76S

Ravarse Recovery Time

Reverse Recovery Charge

0.9 0,85

SOO2

102

30 25

eo

z

so

2

1.B 1.7

A

A

V

na

CC

VGS " 0 V ls - 30 A

is - as A

Vss-O V, Tj-150'C

!F - W dlF/dt-100 A/MB VGS-O V, Tj-1BO'C IF - W dlp/dt - 100 A//JS

Cytaty

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designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls,

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