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BC516-2

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SIEMENS

PNP Silicon Darlington Transistor

• High current gain

• High collector current

• Complementary type: BC 517 (NPN)

BC 516

Type Marking Ordering Code Pin C

1

onfigur 2

ation 3

Package1)

BC 516 Q62702-C944 C B E TO-92

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage VC EO 30 V

Collector-base voltage VC BO 40

Emitter-base voltage Ve b o 10

Collector current 7c 500 mA

Peak collector current 7cm 800

Base current 7b 100

Peak base current 7bm 200

Total power dissipation, 7c = 66 °C P to t 625 mW

Junction temperature 7 ] 150 °C

Storage temperature range 7stg - 6 5 ... + 150

Thermal Resistance

Junction - ambient P th JA <200 KM/

Junction - case2) P th JC < 135

1) For detailed information see chapter Package Outlines.

2) Mounted on Al heat sink 15 mm x 25 mm x 0.5 mm.

5.91

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BC 516

Electrical Characteristics

at Tk = 25 °C, unless otherwise specified.

Parameter Symbol Values Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

I c = 10 mA

F(BR)CE0 30 V

Collector-base breakdown voltage

I c = 100 |jA

F(BR)CB0 40

Emitter-base breakdown voltage

/e = 10 uA

F(BR)EB0 10

Collector cutoff current

Vc b = 30 V

IcBO

100 nA

Vc b = 30 V, 7a = 150 °C - - 10 |jA

Emitter cutoff current

Feb = 4 V

Ie b o 100 |jA

DC current gain

I c = 20 mA; Fce = 2 V

/?FE 30 000

Collector-emitter saturation voltage1)

I c = 100 mA; Ib = 0.1 mA

FcEsat 1 V

Base-emitter voltage1)

I c = 10 mA; Fce = 5 V

Fbe 1.4

AC characteristics Transition frequency

I c = 50 mA, Fce = 5 V ,/= 20 MHz / 200 MHz

Output capacitance

Fc b = 1 0 V ,/= 1 MHz

Cobo — 3.5 PF

1) Pulse test: t< 300 ^s, D < 2 %.

Siemens Aktiengesellschaft

(3)

BC 516

Total power dissipation A c t = / ( 7 a; 7 c)

Permissible pulse load i?thJA = f ( t P)

h

Collector cutoff current /cbo= / ( 7a)

Fee = 30 V

h

Transition frequency ft = /(7c)

Fce= 5 V

Siemens Aktiengesellschaft

(4)

BC 516

Collector-emitter saturation voltage

7 c = / ( F c E s a t )

''CEsat

DC current gain /7FE = f ( I c ) Vce = 2 V

k

Base-emitter saturation voltage

/ c = / ( F B E s a t )

^BEsat

Capacitance C = / ( F e b, Fcb)

^EB, ^CB

Siemens Aktiengesellschaft

Cytaty

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