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SGS-THOMSON

Kfi]Q©[8}(2)iL[i(gTi©[M0©S BUX13

HIGH VOLTAGE POWER SWITCH

DESCRIPTION

~ne BUX13 is a silicon multiepitaxial mesa NPN -ansistor in Jedec TO-3 metal case, intended for

■ gh voltage, fast switching applications.

ABSOLUTE MAXIMUM RATINGS

Symbol P aram e ter V alu e Unit

V c E S Collector-emitter Voltage (VBB = 0) 400 V

V c E R Collector-emitter Voltage (RBes 100 Q) 390 V

V c E O Collector-emitter Voltage ( lB = 0) 325 V

Ve b o Base-emitter Voltage ( l c = 0) 7 V

l c Collector Current 15 A

I c M Collector Peak Current (tp < 1 0 ms) 20 A

Ib Base Current 3 A

P l o t Total Power Dissipation at T caSe < 25 °C 150 W

T s t g Storage Temperature - 65 to 200 °C

T , Junction Temperature 200 °C

December 1988 1/2

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BUX13

THERMAL DATA

Rth j-case Thermal Resistance Junction-case Max 1.17 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

Symbol P a ra m e te r T e s t C onditions Min. Typ. Max. Unit

Ic e s Collector Cutoff Current (Vbe =0)

VCE =400 V

VCE = 400 V Tcase = 125 °C

1.5 6

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Ic e o Collector Cutoff Current

(lB =0) Vce = 260 V 1.5 mA

Ie b o Emitter Cutoff Current

(lc =0) < m 00 II ^1 < 1 mA

VceO(sus)* Collector-emitter Sustaining

Voltage ( Ib =0) lc = 100 mA 325 V

V c E ( s a t ) * Collector-emitter Saturation

Voltage oo II II CO-£■ > > CDCD IIII o b) bo > > 0.8 1.5

V V VBE(sat)* Base-emitter Saturation

Voltage

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CD

IICO

<

00II_o 1.5 V

hFE* DC Current Gain UJ II II > >

LUoo> >

<<

00

II II ° 15

8

60

f i Transition Frequency lc = 1 A VCE = 15 V

f = 10 MHz 8 MHz

ton Turn-on Time ic = 8 A IB1 = 1.6 A

Vcc = 150 V 1.2 gs

ts Storage Time lc = 8 A

IB1 - IB2 - 1 -6 A VCC =150 V

2.5 gs

tf Fall Time 1 gs

* Pulsed : pulse duration = 300gs, duty cycle < 2%.

SGS-THOMSON WiCMHLlCTISOBSOCl 2/2

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