BLW85

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^£m.L-Cona\j.ctoi LPiodueti, Una.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

HF/VHF power transistor BLW85

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V.

Matched hpE groups are available on request.

It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.

QUICK REFERENCE DATA R.F. performance up to Th = 25 °C

MODE OF OPERATION

c.w. (class-B) s.s.b. (class-AB)

VCE V 12,5 12,5

f MHz

175 1 ,6-28

PL W 45 3-30 (RE. P.)

Gp

dB

> 4,5 typ. 19,5

% n

> 75 typ. 35

Zi Q

1.4+J1.6 ZL

D 2,7-j1,3

d3

dB

typ. -33

PIN CONFIGURATION PINNING-SOT123

Fig.1 Simplified outline and symbol.

PIN 1 2 3 4

DESCRIPTION collector

emitter base emitter

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

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HF/VHF power transistor BLW85

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0)

peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open-collector) VEBO Collector current (average) IC(AV) Collector current (peak value); f > 1 MHz ICM R.F. power dissipation up to (f > 1 MHz); Tmb = 25 C P^

Storage temperature Tstg

Operating junction temperature T,

max. 36 V max. 16 V max. 4 V max. 9 A max. 22 A max. 105 W

-65 to + 150 UC max. 200 "C

10 VCE (V)

Fig.2 D.C. SOAR.

80

60

40

20

continuous r f operation

1 derate by

"" 0.58W/K"

continuous X N

d,c, operation derate by 0.43 VWO s

50 100 Th(,,c) 150

Fig.3 R.F. power dissipation; VCE < 16,5 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 30 W; Tmb = 79 °C, i.e. Th = 70 °C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink

Rfh j-mb(dc) Rth j-mb(rf) Rth mb-h

2,5 K/W 1,8 K/W 0,3 K/W

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HF/VHF power transistor BLW85

CHARACTERISTICS Tj = 25 'C

Collector-emitter breakdown voltage VBE = 0; lc = 50 mA

Collector-emitter breakdown voltage open base; IG = 1 00 mA

Emitter-base breakdown voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 18V

Second breakdown energy; L = 25 mH; f = 50 Hz open base

RBE = 10Q D.C. current gain'1'

lc = 4 A; VCE = 5 V

D.C. current gain ratio of matched devices'1' lc = 4 A; VCE = 5 V

Collector-emitter saturation voltage'1' lc= 12, 5 A; IB = 2,5A

Transition frequency atf = 100 MHz'1' -IE= 4 A ; VC B = 12,5V

-IE= 12, 5 A; VCB = 12,5V Collector capacitance atf = 1 MHz

|E = |e = 0; VCB= 15V

Feedback capacitance at f = 1 MHz lc = 200 mA; VCE = 15 V Collector-flange capacitance Note

1 . Measured under pulse conditions: tp < 200 us; 5 < 0,02.

V(BR) CES

V(BR) CEO

V(BR)EBO

ICES

ESBO ESBR

hFE

hFE1/hFE2

VcEsat

fT

c

Cre

Ccf

> 36

> 16

> 4

< 25

> 8

> 8 typ. 50 1 0 to 80

< 1,2

typ. 1,5

typ. 650 typ. 600

typ. 120

typ. 82 typ. 2

V

mA

mJ mJ

V

MHz MHz

PF

PF PF

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HF/VHF power transistor BLW85

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

"

^{•) — *.}

T

F i

..L rm

10 mm scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT