MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING
N-CHANNEL POWER MOS FET INDUSTRIAL USE
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DESCRIPTION
The 2SK3113 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristic, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•Low On-state resistance
RDS(on) = 4.4Ω MAX. (VGS = 10V, ID = 1.0A)
•Low gate charge
QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A)
•Gate voltage rating ±30 V
•Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±2.0 A Drain Current (pulse) Note1 ID(pulse) ±8.0 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current Note3 IAS 2.0 A
Single Avalanche Energy Note3 EAS 2.7 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. On glass epoxy board with 40 × 40 × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3113 TO-251
2SK3113-Z TO-252
★ (TO-251)
(TO-252)
★
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 100 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V ±10 µA
Gate Cut-off Voltage VGS(off) VDS = 10V, ID = 1mA 2.5 3.5 V
Forward Transfer Admittance | yfs| VDS = 10V, ID = 1.0A 0.5 S
Drain to Source On-state Resistance RDS(on) VGS = 10V, ID = 1.0A 3.3 4.4 Ω
Input Capacitance Ciss VDS = 10V 290 pF
Output Capacitance Coss VGS = 0V 60 pF
Reverse Transfer Capacitance Crss f = 1MHz 5 pF
Turn-on Delay Time td(on) VDD = 150V, ID = 1.0A 7 ns
Rise Time tr VGS(on) = 10V 2 ns
Turn-off Delay Time td(off) RG = 10Ω, RL = 10Ω 22 ns
Fall Time tf 9 ns
Total Gate Charge QG VDD = 450V 9 nC
Gate to Source Charge QGS VGS = 10V 2.4 nC
Gate to Drain Charge QGD ID = 2.0A 2 nC
Body Diode Forward Voltage VF(S-D) IF = 2.0A, VGS = 0V 0.9 V
Reverse Recovery Time trr IF = 2.0A, VGS = 0V 0.9 µs
Reverse Recovery Charge Qrr di/dt = 50A/µs 2.0 µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω PG. 50 Ω
L
VDD VGS = 20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. RG
0 VGS
D.U.T.
RL
VDD
τ = 1 sµ Duty Cycle ≤ 1%
VGS Wave Form
ID Wave Form
VGS
10%
VGS(on) 90%
010%
ID
90%
90%
td(on) tr td(off) tf 10%
τ
ID
0
ton toff
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
Tch - Channel Temperature - ˚C
dT - Percentage of Rated Power - %
0 20 40 60 80 100 120 140 160 100
80
60
40
20
0
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160 40
30
20
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
5 15 25 35
FORWARD BIAS SAFE OPERATING AREA
10 100 1000
ID - Drain Current - A
1
VDS - Drain to Source Voltage - V 100
10
1
0.1
Power Dissipation Limited 100
µs 10 ms
1 ms
100 ms
PW = 10
µs ID(pulse)
ID(DC)
TC = 25˚C Single Pulse
DC
RDS(on) Limited
(@V
GS = 20 V)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
100 m 1 10 100 1000
10 m 1 m
100 µ 10 µ
100
10
1
0.1
0.01
Rth(ch-A) = 125˚C/W
Rth(ch-C) = 6.25˚C/W
Single Pulse
★
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
10 20 30 40
1 3 4
2
00 5
6 V VGS = 10 V
8 V Pulsed
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
15 10
5 00
100
10
1.0
0.1
VDS = 10 V Pulsed Tch = 125˚C
75˚C
Tch = 25˚C
−25˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate to Source Cut-off Voltage - V
−50 0 50 100 150
5.0
4.0
3.0
2.0
1.0
0
VDS = 10 V ID = 1 mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
| yfs | - Forward Transfer Admittance - S
0.1 1.0 10
0.10.01 1 10
100 VDS = 10 V
Pulsed
Tch = −25˚C 25˚C 75˚C 125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10 5
VGS - Gate to Source Voltage - V
RDS (on) - Drain to Source On-state Resistance - Ω
1 0
5 15
0
Pulsed
ID = 2.0 A 1.0 A
2 3 4 6 7
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
0.1 1 10
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
0
VGS = 10 V 20 V
Pulsed
1 2 3 4 5 6 7
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50 150
RDS (on) - Drain to Source On-state Resistance - Ω
2
0
0 100
−50
Tch - Channel Temperature - ˚C 3
1
VGS = 10 V 4
6 1 A 7
5 8 9
ID = 2 A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD - Diode Forward Current - A
1.5 1.0
0.5 0
100
10
1.0
0.1
Pulsed 0 V
VGS = 10 V
100 10
1 0.1
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
Ciss
Coss
Crss
VGS = 0 V f = 1 MHz
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
0.1 1 10
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
100
10
1
0.1
VDD =150V VGS = 10V RG =10Ω td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0 10 100
trr - Reverse Recovery Time - ns
0.1
ID - Drain Current - A 10000
1000
100
10
di/dt = 50 A/µs VGS = 0 V
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
0 4 8 12 16
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
16 14 12 10 8 6 4 2 0 VDS
ID = 2.0 A
VGS 800
VDD = 450 V 300 V 150 V
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100 µ 1 m 10 m
100
L - Inductive Load - H
IAS - Single Avalanche Current - A
1.0 10
0.110 µ RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C
EAS = 2.7 mJ IAS = 2.0 A
SINGLE AVALANCHE ENERGY DERATING FACTOR
75 125 150
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
50 100
25
VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 2.0 A
0 20 40 60 80 100 120
PACKAGE DRAWINGS (Unit: mm)
1) TO-251 (MP-3) 2) TO-252 (MP-3Z)
1.Gate 2.Drain 3.Source 4.Fin (Drain) 2
1 3
6.5±0.2 5.0±0.2 4
1.5-0.1+0.2 5.5±0.27.0 MAX. 13.7 MIN.
2.3 2.3
0.75
0.5±0.1 2.3±0.2
1.6±0.2
1.1±0.2
0.5-+0.20.1
0.5-+0.20.1
1. Gate 2. Drain 3. Source 4. Fin (Drain) 1 2 3
4 6.5±0.2 5.0±0.2
4.3 MAX.0.8
2.3 2.3 0.9 MAX.
5.5±0.2 10.0 MAX.
2.0 MIN.
1.5-0.1+0.2 2.3±0.2 0.5±0.1
0.8 MAX.
0.8 1.0 MIN. 1.8 TYP.0.7
1.1±0.2
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source Body Diode
Gate Protection Diode Gate
Drain
The information in this document is current as of january, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.
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