2N3725-2

., One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (201) 376-2922 (212) 227-6005 FAX: (201) 376-8960

SILICON

2N3724 2N4013

!5 2N4014

HIGH SPEED NPN SILICON PLANAR EPITAXIAL

HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

• High Voltage: 80V min. 2N3725. 2N4014

• High Gain: 65 typ. @ 1000 mA

• Low V

(sat): 0.5V typ. © 1000 mA

• Low C

: 4.8 pF typ. © 10V. 2N3725, 2N4014

• Fast t

: 18 nsec typ. @ 500mA

• Fast t

: 45 nsec typ. @ 500mA

2N4013-14

ACTUAL SIZE

2N3724-25

I

ACTUAL SIZE

£

SJ

M tfl

DIMENSIONS

TO-18

DIMENSIONS

K&'-t

TO-5

n

n

«

The ITT 2N3724 • 2N3725 and 2N4013 • 2N4014 are high-

voltage, high-current NPN silicon planar epitaxial transistors useful for applications requiring breakdown voltages up to 50V and operating current to one ampere. Low saturation voltage and fast switching times make the transistor ideal for high-frequency amplifiers, core drivers, relay drivers and pulse generators.

ABSOLUTE MAXIMUM RATINGS

CHARACTERISTICS Collector-to-Base Voltage

Collector-to- Emitter Voltage (shorted base) Collector-to- Emitter Voltage (open base) Emitter- to- Base Voltage

Collector Current (300 nsec; 1% duty cycle) Junction Temperature (op. and stg.)

Maximum Power Dissipation Total Dissipation @ TC«25'C

(derate above 25°C) Total Dissipation @TA=25°C

(derate above 25°C) . •;

2N3724 2N4013

50 . . . . 50 30 60 1 0 . . . — 65 to

2N4013 2N4014

1 2 (68 mW/°C)

036 f2.06 mW/°C)

2N3725 2IM4014

80 80 50 60 1 0 +200

2N3724 2N3725

3 5 (20mW/°C)

08 f4.56 mW/°C)

UNITS Volts Volts Volts Volts Amps

°C

Watts Watts

<y\EUf Qe.iie.ij <SE.rn.i-dontLu.ctoi ZPioducti, Unc.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

ELECTRICAL CHARACTERISTICS

TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960

25°C unless otherwise noted.

SYMBOL

BVceo BVCES LVcEO1'2 BVEBO

h«'

VcE(sat)1

V,E(sat)'

ICBO

Ceb

c

hi.

t«,

*•"

2N3724 ; 2N4013

MIN. TYP. MAX.

50 :>,:-:-:&

50 ' I..-::- ^:;~m-

• 30 .:^--^7:<;w$£

.6.0 ' ."/•. ,:^:..y.;;jr:

30 '• '60 ^;; s^;V- M 60 90 C 150 40 ••'• 65 vfe:-v;.'%i

••' 35 . 50 ^'

:

-/*';3 r

. 2 5 • ' 4 5 '^,r,,&|,

1

30 - 65 '^V%&;

. ^: 3o /-4B. m ^: +m

, 20 ^ M. ,.$&*$$

•'••;'.' 0.11 v^o:25 .; -;•." 0.13! -0:2: i

0.22 1 0.32,;

- '

. 0.3 •%£<«#

0.4 -'0.65 0.5 S 0.75

.' • :-, • • • • • • f . . • • ' .

0.64 0.76

;0.75 "10.86

• •••.'" ^0.89 "^:.1.ilu.:

0.9 0.95 i!l^l

-. - • " • ' • • j.6'

^l;5;^

,;•. . . . M.I.;;A;;;

I^;"::

. ' . - -.oasv'-i'jfjJJ

'^. ,27' ,'S^120 .';

6.0 12 40 55

•• '• .-. : ': : ' • :• ..•

. 3.0 ' ,•'"4,5"'.%'^^"

' •: YJ-V-M'-^.^*

:, yi/'v;:iB^.Mx^

'. •>••• \:45-'^;60V :

• •:>•'. •• \-c ••&: *:3&:-'

• i:^:-S^|S

• 2N3725 2N4014

MIN. TYP. MAX.

• ' f ' i. „ '.

so %. ^:

^ '.->:.

-80 ^:.,-::v..:^v-

: ^; so .•>:',• ••;-:- ;v ^: i-:;;..

6.0 ;f. ^; -^ ;^l..;:;;

so .;?;

eo '^-f-Ia'^

60 :'90 ;150 40 '.ji,6B •-W;i:,';i

35 "'?50 •''.•.'.•^r:j!J.

; 20 ^r."40 ' '••:^'W^, :

• 25 ;?.::65 rv .<**;."•:

; 30 ^40 •'•^•: "

• 20 ;-.35 -'".^v. :.", . -..- - .. • .',.^;'*;- - - , '.

.'''•'-t0.19'"-v0.25

" ?«'0.2T- ^26

•• ^ ^: -.;:^;o.3i ;'.$>A-;

•• '.'.VSF.QA ''

.^0.52.

':.S'V0.5 .,w;;6,8 .:-

--;.^.'0.e .^95

;:;? 0.64 :|X).76

fM0.75 ™5(J.86

• ' '4^0.89 tj.1"

0.9 i-,0.95 vH.2

' ••^fi^'to 'i^-"6-

"-

•?Cj'i.i ."1|.7: ;

-:^^!^4^^

;.--^-0.33 ;'^1.7

'

••..-^,; 26" '""^120 '

4.8 ; 10

••

';^i',:40 '^55 :

3.0 ^4.5 .;?^i4:

;

:^vi8 ^;;35

• .-••"'-- • • ' ••. ' . • • - ' ' • • •.•'>;•"," i -.;,.•' •..

• • • •* ,._;. u .>;:; : --

: ;'•:;: 45 .;^GO ,

UNIT

Vdc Vdc Vdc Vdc

Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc Vdc MA MA MA MA PF pF

nsec

nsec

CONDITIONS

lc=10MA IC = 10MA lc=10mA IE=10MA

lc = 10mA VCE = 1.0V lc = 100mA VCE = 1.0V lc = 300mA VCE = 1.0V lc = 500mA VCE = 1.0V lc = 800mA VCE = 2.0V lc= 1000mA VCE = 5.0V

lc = 100mA VCE = 1.0V TA = ~55°C lc = 500mA VCE = 1.0V TA = -55°C lc = 10mA lB = 1.0mA

lc = 100mA =10mA lc= 300mA =30mA lc = 500mA =50mA lc = 800mA =80mA lc = 1000mA = 100mA lc = 10mA IB= 1.0mA lc = 100mA B = 10mA lc = 300mA B = 30mA lc=r 500mA B = 50mA lc = 800mA B = 80mA lc = 1000mA B=100mA VCB = 40V

VCB = 60V

VCB=40V TA = 100°C VCB = 60V TA = 100°C

VCB = 10V

VEB = 0.5V

lc = 50mA VCE = 10V f=100MHz

IWITCHINV tlMC TItT CIRCUIT

lc- 500mA f ?-" ?*- hi«50mA I '"f -1 lB>»50mA "f H&

V 1filt 1 ^ } TO UUPIINB MOrt

xri^H^K"-

"•-'-• n. *

1^=**"

DUTY CYCLE <1%

NOTES: 1. Pulsed width <300 jusec; 1 % duty cycle.

2. Lowest emitter-to-collector voltage.