sml-Conduckoi Lproaucti., Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
2N3798 2IM3799
PNP SILICON TRANSISTOR JEDECTO-18CASE
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
. 2N3798. 2N3799 types are Silicon PNP Epitaxial Planar Transistors designed for low noise amplifier applications.
MAXIMUM RATINGS (TA=25°C)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation
Power Dissipation (TQ = 25°C) Operating and Storage
Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL
VCEO
VEBO 'c PD PD
j,Tstg 9JA
e
jcELECTRICAL CHARACTERISTICS (TA -25°C unless otherwise noted) SYMBOL
'CBO
'CBO 'EBO
BVCBO BVCEO BVEB0
VCE(SAT)
VCE(SAT]
VBE(SAT)
V
BE(SAT)
VBE(ON) hFE hFE
"FE
TEST CONDITIONS
VCB = 50V
. TA = 150°C
v
8E=4.ov
IC =
lc = 1.0mA, IB = '
IC=IOO^A« IB
= lc = 1.0mA, IB = 100MA VcE = 5.0V, lc = VCE = 5.0V, lc = '= 5.0V, l
c=
= 5.0V, l
c= = -55°C
UNITS 60
60 5.0 50 360 1.2
-65 to + 200 0.49
150
V V V mA mW W
°C
°C/mW
°C/W
id)
2N3798 2N3799 MIN
60 60 5.0
100 150 75
MAX MIN MAX 10 10 10 10 20 20
60 60 5.0
0.20 0.20 0.25 0.25 0.70 0.70 0.80 0.80 0.70 0.70
75 225 300 150
UNITS nA AtA nA V V V V V V V V
NJ Semiconductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use N ( Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS (Continued)
2N3798 2N3799
SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
hFE VCE = 5.0V, lC = 500/tA 150 450 300 900
"FE VCE = 5.0V, lc = 1.0mA 150 300
hFE VCE = 5.0V, lc = 10mA 125 250
fT VCE = 5.0V, lc = 500MA,f = 30MHz 30 30 MHz
*fT VCE = 5.0V, lc = 1.0mA, f= 100MHz 80 80 MHz
*Cob VCB = 5.0V,lE = 0,f = 100kHz 5.0 5.0 pF
*cib VBE=0.5V, lc = 0, f = 100kHz 15 15 pF hie VCE = 10V, IC = 1.0mA, f = 1.0kHz 3.0 15 10 40 kO
hre VCE = 10V, lc = 1.0mA, f = 1.0kHz 25 25 X 10"4 hfe VCE=10V, lc=. 1.0mA, f = 1.0kHz 150 600 300 900
hoe VCE = 10V. lc = 1.0mA, f a 1.0kHz 5.0 60 5.0 60 /imho NF VCE-10V, lc=-100/iA. RG=3.0kfl
f=100Hz, B.W. = 20Hz 4.0 7.0 2.5 4.0 dB NF VCE=10V, lc = 100/tA, RG = 3.0ktl
f = 1kHz, B.W.=200Hz 1.5 3.0 0.8 1.5 dB NF VCE - 1 0V, IC - 1 00/iA. RG = 3-OkO
f = 10kHz, B.W.= 2kHz 2.5 2.5 1.5 1.5 dB NF VCE=10V, IC = 100/*A, RG=3.0kO
Broadband B.W. = 1 OHz to 15.7kHz 3.5 2.5 dB
