BFR194

(1)

• For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA

• Complementary type: BFR 106 (NPN)

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Ordering Code Pin Configuration Package

BFR 194 RKs Q62702-F1346 1 = B 2 = E 3 = C SOT-23

Maximum Ratings

Parameter Symbol Values Unit

Collector-emitter voltage V_CEO 15 V

Collector-base voltage V_CBO 20

Emitter-base voltage V_EBO 3

Collector current I_C 100 mA

Base current I_B 10

Total power dissipation T_S ≤ 73 °C

P_tot

700

mW

Junction temperature T_j 150 °C

Ambient temperature T_A - 65 ... + 150

Storage temperature T_stg - 65 ... + 150

Thermal Resistance

Junction - soldering point ¹⁾ R_thJS ≤ 110 K/W

1) T_S is measured on the collector lead at the soldering point to the pcb.

(2)

Electrical Characteristics at T_A = 25°C, unless otherwise specified.

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0

V_(BR)CEO

15 - -

V

Collector-base cutoff current V_CB = 10 V, I_E = 0

I_CBO

- - 100

nA

Emitter-base cutoff current V_EB = 2 V, I_C = 0

I_EBO

- - 1

µA

DC current gain

I_C = 70 mA, V_CE = 8 V

h_FE

15 50 -

-

(3)

Electrical Characteristics at T_A = 25°C, unless otherwise specified.

min. typ. max.

AC Characteristics Transition frequency

I_C = 70 mA, V_CE = 8 V, f = 500 MHz

f_T

3.5 5 -

GHz

Collector-base capacitance V_CB = 10 V, f = 1 MHz

C_cb

- 1.47 2

pF

Collector-emitter capacitance V_CE = 10 V, f = 1 MHz

C_ce

- 0.28 -

Emitter-base capacitance V_EB = 0.5 V, f = 1 MHz

C_eb

- 4.4 -

Noise figure

I_C = 20 mA, V_CE = 8 V, Z_S = Z_Sopt f = 900 MHz

f = 1.8 GHz

F

- -

4.7 2.8

- -

dB

Power gain ²⁾

I_C = 70 mA, V_CE = 8 V, Z_S = Z_Sopt Z_L = Z_Lopt

f = 900 MHz f = 1.8 GHz

G_ma

- -

5.5 10

- -

Transducer gain

I_C = 70 mA, V_CE = 8 V, Z_S =Z_L= 50 Ω f = 900 MHz

f = 1.8 MHz

|S_21e|²

- -

3 8

- -

2) G_ma = |S₂₁/S₁₂| (k-(k²-1)^1/2)

(4)

SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data

IS = 4.574 fA

VAF = 9.1007 V

NE = 0.841 -

VAR = 1.7871 V

NC = 1.6 -

RBM = 4.1356 Ω CJE = 17.699 fF

TF = 53.11 ps

ITF = 0.010453 mA VJC = 0.71631 V TR = 0.97481 ns

MJS = 0 -

XTI = 3 -

BF = 111.78 -

IKF = 0.84785 A BR = 92.296 - IKR = 0.012843 A RB = 0.75304 Ω RE = 0.15908 Ω VJE = 0.84843 V XTF = 0.65766 -

PTF = 0 deg

MJC = 0.40003 -

CJS = 0 fF

XTB = 0 -

FC = 0.90755 -

NF = 0.66503 - ISE = 21.629 fA NR = 0.43618 - ISC = 0.0078447 fA IRB = 0.061674 mA RC = 0.10833 Ω MJE = 0.48212 - VTF = 0.10323 V CJC = 3585.6 fF XCJC = 0.063742 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

All parameters are ready to use, no scalling is necessary.

Extracted on behalf of SIEMENS Small Signal Semiconductors by:

Institut für Mobil-und Satellitenfunktechnik (IMST)

Package Equivalent Circuit:

LBI = 0.85 nH

LBO = 0.51 nH

LEI = 0.69 nH

LEO = 0.61 nH

LCI = 0 nH

LCO = 0.49 nH

CBE = 73 fF

CCB = 84 fF

CCE = 165 fF

Valid up to 6 GHz

For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

(5)

Total power dissipation P_tot = f (T_A*, T_S)

* Package mounted on epoxy

0 20 40 60 80 100 120 °C 150

T_A,T_S 0

100 200 300 400 500 600 mW 800

P_tot

T_S

T_A

Permissible Pulse Load R_thJS = f (t_p)

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1s 10 ⁰ t_p 10 0

10 1

10 2

10 3

K/W R_thJS

D = 0 0.005 0.01 0.002 0.05 0.1 0.2 0.5

Permissible Pulse Load P_totmax/P_totDC = f (t_p)

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1s 10 ⁰ t_p 10 0

10 1

10 2

P_totmax/P_totDC-

D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

(6)

Collector-base capacitance C_cb = f (V_CB) V_BE = v_be = 0, f = 1MHz

0 4 8 12 16 V 22

V_R 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 pF 4.5

C_cb

Transition frequency f_T = f (I_C) V_CE = Parameter

0 20 40 60 80 mA 120

I_C 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GHz 5.5

f_T

10V 8V

5V 3V 2V

1V

0.7V

Power Gain G_ma, G_ms = f(I_C) f = 0.9GHz

V_CE= Parameter

0 20 40 60 80 mA 120

I_C 4

5 6 7 8 9 10 dB 12

G 10V

5V 3V

2V

1V

0.7V

Power Gain G_ma, G_ms = f(I_C) f = 1.8GHz

V_CE= Parameter

0 20 40 60 80 mA 120

I_C 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 dB 7.0

G

10V

5V 3V

2V

1V

0.7V

(7)

Power Gain G_ma, G_ms = f(V_CE):_____

|S₂₁|² = f(V_CE):--- f = Parameter

0 2 4 6 8 V 12

V_CE 0

2 4 6 8 dB 12

G

0.9GHz

1.8GHz 0.9GHz I_C=70mA

Intermodulation Intercept Point IP₃=f(I_C) (3rd order, Output,Z_S=Z_L=50Ω)

V_CE= Parameter, f = 900MHz

0 10 20 30 40 50 60 70 80 mA 100 I_C 10

15 20 25 30 dBm 40

IP₃

8V

3V

2V

1V

Power Gain G_ma, G_ms = f(f) V_CE = Parameter

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f 0

5 10 15 20 dB 30

G

10V 2V 0.7V I_C=70mA

Power Gain |S₂₁|²= f(f) V_CE = Parameter

0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5

f -6

-2 2 6 10 14 18 22 dB 28

S₂₁

10V 2V 0.7V I_C=70mA