BUV26

BUV26

SGS-THOMSON

GfflD(glM&i(OT®K]D(gS

NPN FAST SWITCHING TRANSISTOR

■ LOW SATURATION VOLTAGE

■ FAST TURN-ON AND TURN-O FF

■ BASE DRIVE SPECIFIED FOR DIFFERENT VALUES OF lc

■ W IDE SURGE AREA

DESCRIPTION

High speed transistor suited for low voltage applica­

tions.

High frequency and efficiency converters switching regulators m otor control.

ABSOLUTE MAXIMUM RATINGS

S ym bo l P a ra m e te r V a lu e U n it

VcBO Collector-base Voltage (Ie = 0) 180 V

VcEO Collector-emitter Voltage (Ib = 0) 90 V

Vebo Emitter-base Voltage (lc = 0) 7 V

lc Collector Current 14 A

1c m Collector Peak Current (tp < 10ms) 25 A

Ib Base Current i 4 A

Ibm Base Peak Current (tp < 10ms) 6 A

P tot Total Dissipation at T c < 25°C 85 W

P tot Total Dissipation at Tc < 60°C 65 W

1" stg Storage Temperature - 65 to + 175 °C

Ti Max. Operating Junction Temperature 175 °C

December 1988 1/6

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.76 °C/W

ELECTR IC AL CHARACTERISTICS

S ym b o l P a ra m e te r T e s t C o n d itio n s M in. Typ. M ax. U n it

ICER Collector Cutoff Current (Rbe = 50Q)

V CE = 180V T c = 125°C 3 mA

ICEX Collector Cutoff Current

V CE = 180V V BE = - 1-5V T c = 125°C 1 mA

Ie b o Emitter Cutoff Current (lc = 0)

V EB = 5V 1 mA

VcEO(sus)* Collector Emitter l c = 0.2A 90 V

Sustaining Voltage L = 25m H

oCD>

Emitter-base Voltage (lc = 0)

Ie = 50mA 7 30 V

VcE(sat)* Collector-emitter lc = 6 A l B = 0.6A 0.6 V

Saturation Voltage lc = 12A l B = 1.2A 1.5 V

VBE(sat)* Base-emitter Saturation Voltage

lc = 12A l B = 1.2A 2 V

RESISTIVE LOAD

ton Turn-on Time V cc = 50V lc = 12A 0.4 0.6 ps

ts Storage Time > CD ID II I CD >

I b1 = 1 -2A 0.45 1 ps

tf Fall Time Rbb = 2.5Q 0.12 0.25 ps

INDUCTIVE LOAD

ts Storage Time V c c = 50V lc = 12A 0.5 ps

ti Fall Time V BE = — 5V

Lb = 0.5pH

l Bf = 1.2A 0.04 ps

ts Storage Time V cc = 50V lc = 12A 2 ps

tf Fall Time V BE = —5V I b 1 - 1.2A 0.15 ps

Lb = 0.5pH T, = 125°C

* Pulsed : Pulse duration = 300|is, duty cycle = 1.5%

SGS-THOMSON

DC and Pulse Area.

Power and Is * Derating vs Case Temperature.

DC Current Gain.

Collector-em itter Voltage vs Base-emitter Resistance.

0 4 8 12 16 l c (A)

T SGS-THOMSON

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3/6

Base Characteristics.

0 0.5 t 1 5 2 2 .5 Ig (A )

Collector Saturation Region.

Saturation Voltage. Collector Current Spread vs. Base-emitter

Voltage.

{ Z T SCS-THOMSON

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SW ITCHING O PERATIN G AND O VER LO AD A R EAS

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Transistor Forward Biased

I _______________

Transistor Reverse Biased

- During the turn on - During the turn off with negative base emitter

- During the turn oft without negative base-emitter voltage and RbeS100£1

voltage

Forward Biased Safe Operating Area (FBSOA).

U 4 0 BU 1 A ) 160 V cE

The hatched zone can only be used for turn on.

Forward Biased Accidental Overload Area (FBAOA).

Reverse Biased Accidental Overload Area (RBAOA).

0 40 80 120 160 V CE(V)

The Kellog network (heavy point) allows the calcu­

lation of the m aximum value of the short-circuit cur­

rent fo r a given base current Is (90 % confidence).

High accidental surge currents (I > Ic m) are allowed tim es during the com ponent life.

After the accidental overload current, the RBAOA has to be used fo r the turn off.

if they are non repetitive and applied less than 3000

SGS-THOMSON

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5/6

Switching Times vs. Collector Current (resistive load).

t (MS)

0,4

0,2

0.1

0,04

0,02

0.01

0 2 4 6 8 10 lc ( A )

Switching Times Test Circuit on inductive load.

B Y X 6 1 -4 0 0

0 25 50 75 100 T j(°C )

Switching Tim es vs. Collector Current.

t

(ms)

0,4

0.2

0.1

0.06

0,04

0,02

0,01

0 2 4 6 8 10 l C (A)

_________1____

v8E = -^{5 V}

V CC = &

'C^B =

0 V l s 0

tf

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r z 7 SGS-THOMSON

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