MOS FIELD EFFECT TRANSISTOR
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2SK3115
SWITCHING
N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low gate charge
QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A
Drain Current (pulse) Note1 ID(pulse) ±24 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 6.0 A
Single Avalanche Energy Note2 EAS 24 mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3115 Isolated TO-220
(Isolated TO-220)
★
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V
Forward Transfer Admittance | yfs| VDS = 10 V, ID = 3.0 A 2.0 S
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 3.0 A 0.9 1.2 Ω
Input Capacitance Ciss VDS = 10 V 1100 pF
Output Capacitance Coss VGS = 0 V 200 pF
Reverse Transfer Capacitance Crss f = 1 MHz 20 pF
Turn-on Delay Time td(on) VDD = 150 V, ID = 3.0 A 18 ns
Rise Time tr VGS(on) = 10 V 12 ns
Turn-off Delay Time td(off) RG = 10 Ω, RL = 50 Ω 50 ns
Fall Time tf 15 ns
Total Gate Charge QG VDD = 450 V 26 nC
Gate to Source Charge QGS VGS = 10 V 6 nC
Gate to Drain Charge QGD ID = 6.0 A 10 nC
Body Diode Forward Voltage VF(S-D) IF = 6.0 A, VGS = 0 V 1.0 V
Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 1.4 µs
Reverse Recovery Charge Qrr di/dt = 50 A/µs 6.5 µC
TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V
PG.
RG = 25 Ω 50 Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50 Ω D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 µs Duty Cycle ≤ 1%
τ
VGS Wave Form
VDS Wave Form
VGS
VDS
010%
0 90%
90%
90%
VGS(on)
VDS
ton toff
td(on) tr td(off) tf 10% 10%
★
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
Tch - Channel Temperature - ˚C
dT - Percentage of Rated Power - %
0 20 40 60 80 100 120 140 160 100
80
60
40
20
0
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160 80
60
40
20
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
10 100 1000
ID - Drain Current - A
1
VDS - Drain to Source Voltage - V 100
10
1
0.1
Power Dissipation Limited
100 µs
10 ms 1 ms 100
ms PW
= 10 µs RDS(on)
Limited
ID(pulse)
ID(DC)
TC = 25˚C Single Pulse
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r th (t) - Transient Thermal Resistance - ˚C/W
100 m 1 10 100 1000
10 m 100 µ 1 m
10 µ 100
10
1
0.1
0.01
Rth(ch-A) = 62.5˚C/W
Rth(ch-C) = 3.57˚C/W
★
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
10 20 30 40
5 15 20
10
0 25
6 V VGS = 10 V
8 V
Pulsed
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
15 10
5 0
100
10
1.0
0.1
VDS = 10 V Pulsed Tch = 125˚C
75˚C
Tch = 25˚C
−25˚C
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate Cut-off Voltage - V
−50 0 50 100 150
5.0
4.0
3.0
2.0
1.0
0
VDS = 10 V ID = 1mA
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.0 10
ID - Drain Current - A
| yfs | - Forward Transfer Admittance - S
10
0.1 1.0
0.1 VDS = 10 V Pulsed
Tch = −25˚C 25˚C 75˚C 125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8 16 20
2.0
VGS - Gate to Source Voltage - V
RDS (on) - Drain to Source On-state Resistance - Ω
ID = 6.0 A 3.0 A
1.0
0 4 12
Pulsed
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
1.0 10 100
0.8
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
0.4 2.0
0 1.2 1.6
VGS = 10 V 20 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50 150
RDS (on) - Drain to Source On-state Resistance - Ω
ID = 6.0 A 3.0 A 2.0
0−50 0 100
Tch - Channel Temperature - ˚C 3.0
1.0
VGS = 10 V Pulsed
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD - Diode Forward Current - A
1.5 1.0
0.5 0
100
10
1.0
0.1
Pulsed 0 V
VGS = 10 V
1000 100
10 1.0
10000
1000
100
10
1
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
Ciss, Coss, Crss - Capacitance - pF
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V VGS =0V
f=1MHz
SWITCHING CHARACTERISTICS
0.1 1 10
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
100
10
1
0.1
VDD =150V VGS = 10V RG =10Ω td(off)
td(on)
tf
tr
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1.0 10 100
trr - Reverse Recovery Time - ns
0.1
ID - Drain Current - A 10000
1000
100
10
di/dt = 50 A/µs VGS = 0 V
Qg - Gate Charge - nC
VDS - Drain to Source Voltage - V
0 10 20 30 40
600
400
200
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
16 14 12 10 8 6 4 2 0 ID = 6 A
VGS
VDD = 450 V 300 V 120 V
VDS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100 µ 1 m 10 m
100
L - Inductive Load - H
IAS - Single Avalanche Current - A
1.0 10
0.110 µ RG = 25 Ω VDD = 150 V VGS = 20 → 0 V Starting Tch = 25˚C
EAS = 24 mJ IAS = 6 A
SINGLE AVALANCHE ENERGY DERATING FACTOR
75 125 150
120
100
80
60
40
20
0
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
50 100
25
VDD = 150 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 6 A
PACKAGE DRAWING (Unit: mm)
10.0 ± 0.3
3.2 ± 0.2 φ 4.5 ± 0.2
2.7 ± 0.2
2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2
2.54 1.3 ± 0.2
2.54 0.7 ± 0.1
4 ± 0.2
15.0 ± 0.3 12.0 ± 0.2
3 ± 0.1
1 2 3
1.Gate 2.Drain 3.Source
13.5MIN.
Isolated TO-220(MP-45F)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Body Diode
Source (S) Drain (D)
Gate (G)
[MEMO]
M8E 00. 4
The information in this document is current as of January, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.
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