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PROCESS

PRINCIPAL DEVICE TYPES PROCESS

DIE SIZE DIE THICKNESS

BASE BONDING PAD AREA EMITTER BONDING PAD AREA TOP SIDE METALIZATION BACK SIDE METALIZATION

39

145 Adams Avenue

Hauppauge, NY 11788 USA Phone (631) 435-1110 Fax (631) 435-1824 w w w . c e n t r a l s e m i . c o m PROCESS DETAILS

Please refer to

selection guide on page . GEOMETRY

Central Central Central Central Central

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

Semiconductor Corp.

TM

CP215

EPITAXIAL PLANAR 21 x 21 MILS 9.0 MILS 4.3 x 4.3 MILS 5.0 x 5.0 MILS Al - 15,000Å Au - 10,000Å

2N3725 2N3725A MPQ3725 MPQ3725A

NPN - Saturated Switch Transistor Chip

Small Signal Transistors

B

E

BACKSIDE COLLECTOR

18

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