PROCESS
PRINCIPAL DEVICE TYPES PROCESS
DIE SIZE DIE THICKNESS
BASE BONDING PAD AREA EMITTER BONDING PAD AREA TOP SIDE METALIZATION BACK SIDE METALIZATION
39
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Please refer to
selection guide on page . GEOMETRY
Central Central Central Central Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
CP215
EPITAXIAL PLANAR 21 x 21 MILS 9.0 MILS 4.3 x 4.3 MILS 5.0 x 5.0 MILS Al - 15,000Å Au - 10,000Å
2N3725 2N3725A MPQ3725 MPQ3725A
NPN - Saturated Switch Transistor Chip
Small Signal Transistors
B
E
BACKSIDE COLLECTOR
18