ThyristorsBT151F series

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GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated thyristors in a full pack, SYMBOL PARAMETER MAX. MAX. MAX. UNIT plastic envelope, intended for use in

applications requiring high BT151F- 500 650 800

bidirectional blocking voltage VDRM, Repetitive peak off-state 500 650 800 V capability and high thermal cycling VRRM voltages

performance. Typical applications I_T(AV) Average on-state current 5.7 5.7 5.7 A include motor control, industrial and IT(RMS) RMS on-state current 9 9 9 A domestic lighting, heating and static ITSM Non-repetitive peak on-state 100 100 100 A

switching. current

PINNING - SOT186 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION 1 cathode

2 anode

3 gate case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -650 -800

VDRM, VRRM Repetitive peak off-state - 500¹ 650¹ 800 V

voltages

I_T(AV) Average on-state current half sine wave; T_hs≤ 87 ˚C - 5.7 A

I_T(RMS) RMS on-state current all conduction angles - 9 A

ITSM Non-repetitive peak half sine wave; Tj = 125 ˚C prior on-state current to surge; with reapplied V_DRM(max)

t = 10 ms - 100 A

t = 8.3 ms - 110 A

I²t I²t for fusing t = 10 ms - 50 A²s

dI_T/dt Repetitive rate of rise of I_TM = 20 A; I_G = 50 mA; - 50 A/µs on-state current after dIG/dt = 50 mA/µs

triggering

I_GM Peak gate current - 2 A

VGM Peak gate voltage - 5 V

V_RGM Peak reverse gate voltage - 5 V

P_GM Peak gate power - 5 W

PG(AV) Average gate power over any 20 ms period - 0.5 W

T_stg Storage temperature -40 150 ˚C

T_j Operating junction - 125 ˚C

temperature

a k

g

1 2 3

case

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ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Visol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V three terminals to external

heatsink

Cisol Capacitance from T2 to external f = 1 MHz - 12 - pF

heatsink

THERMAL RESISTANCES

Rth j-hs Thermal resistance with heatsink compound - - 4.5 K/W

junction to heatsink without heatsink compound - - 6.5 K/W

Rth j-a Thermal resistance in free air - 55 - K/W

junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

IGT Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA

IL Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA

IH Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA

VT On-state voltage IT = 23 A - 1.4 1.75 V

VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V

VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

ID, IR Off-state leakage current VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

dV_D/dt Critical rate of rise of V_DM = 67% V_DRM(max); T_j = 125 ˚C;

off-state voltage exponential waveform

Gate open circuit 50 130 - V/µs R_GK = 100 Ω 200 1000 - V/µs t_gt Gate controlled turn-on I_TM = 40 A; V_D = V_DRM(max); I_G = 0.1 A; - 2 - µs

time dI_G/dt = 5 A/µs

t_q Circuit commutated V_D = 67% V_DRM(max); T_j = 125 ˚C; - 70 - µs turn-off time I_TM = 20 A; V_R = 25 V; dI_TM/dt = 30 A/µs;

dV_D/dt = 50 V/µs; R_GK = 100 Ω

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Fig.1. Maximum on-state dissipation, P_tot, versus average on-state current, I_T(AV), where

a = form factor = I_T(RMS)/ I_T(AV).

Fig.2. Maximum permissible non-repetitive peak on-state current I_TSM, versus pulse width t_p, for

sinusoidal currents, t_p≤ 10ms.

Fig.3. Maximum permissible rms current I_T(RMS) ,

Fig.4. Maximum permissible non-repetitive peak on-state current I_TSM, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.5. Maximum permissible repetitive rms on-state current I_T(RMS), versus surge duration, for sinusoidal

currents, f = 50 Hz; T_hs≤ 87˚C.

Fig.6. Normalised gate trigger voltage

0 1 2 3 4 5 6

0 2 4 6 8 10

a = 1.57

1.9 2.2 2.8

4

IF(AV) / A Ptot / W

conduction angle form

factor degrees

30 60 90 120 180

4 2.8 2.2 1.9 1.57

125 116 107 98 89 Ths(max) / C80

a

1 10 100 1000

0 20 40 60 80 100 120

Number of half cycles at 50Hz ITSM / A

T ITSM

time I

Tj initial = 25 C max T

10 100 1000

10us 100us 1ms 10ms

T / s ITSM / A

T ITSM

time I

Tj initial = 25 C max T

dI /dt limit_T

0.010 0.1 1 10

5 10 15 20 25

surge duration / s IT(RMS) / A

-50 0 50 100 150

0 2 4 6 8 10

Ths / C IT(RMS) / A

87 C

-50 0 50 100 150

0.4 0.6 0.8 1 1.2 1.4 1.6

Tj / C VGT(Tj)

VGT(25 C)

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Fig.7. Normalised gate trigger current I_GT(T_j)/ I_GT(25˚C), versus junction temperature T_j.

Fig.8. Normalised latching current I_L(T_j)/ I_L(25˚C), versus junction temperature T_j.

Fig.9. Normalised holding current I_H(T_j)/ I_H(25˚C), versus junction temperature T_j.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z_{th j-hs}, versus pulse width t_p.

Fig.12. Typical, critical rate of rise of off-state voltage, dV_D/dt versus junction temperature T_j.

-50 0 50 100 150

0 0.5 1 1.5 2 2.5 3

Tj / C IGT(Tj)

IGT(25 C)

0 0.5 1 1.5 2

0 5 10 15 20 25 30

VT / V IT / A

Tj = 125 C Tj = 25 C

Vo = 1.06 V Rs = 0.0304 ohms

typ max

-50 0 50 100 150

0 0.5 1 1.5 2 2.5

3 BT145

Tj / C IL(Tj)

IL(25 C)

0.001 0.01 0.1 1 10

tp / s Zth j-hs (K/W)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp P

t D

without heatsink compound

with heatsink compound

-50 0 50 100 150

0 0.5 1 1.5 2 2.5 3

Tj / C IH(Tj)

IH(25 C)

0 50 100 150

10 100 1000 10000

Tj / C dVD/dt (V/us)

gate open circuit RGK = 100 Ohms

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MECHANICAL DATA

Dimensions in mm Net Mass: 2 g

Fig.13. SOT186; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

10.2 max 5.7 max

3.23.0

0.9 0.5

4.4 max

2.9 max

4.4 4.0

seating plane

7.9 7.5

17 max

0.55 max 1.3 13.5

min

2.54 5.08

0.9 0.7

1 2 3

0.4 M

top view 3.5 max

not tinned 4.4

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DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

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The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.