●
High Current Triacs
●
12 A RMS
●
Glass Passivated Wafer
●
400 V to 800 V Off-State Voltage
●
Max I
GTof 50 mA (Quadrants 1 - 3)
MT1 MT2 G
TO-220 PACKAGE (TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA 1
2 3
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at the rate of 300 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC236D TIC236M TIC236S TIC236N
VDRM
400 600 700 800
V
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) IT(RMS) 12 A Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3) ITSM 100 A
Peak gate current IGM ±1 A
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM Repetitive peak
off-state current VD = Rated VDRM IG = 0 TC = 110°C ±2 mA
IGT Gate trigger current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω
tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs
12 -19 -16 34
50 -50
-50 mA
VGT Gate trigger voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω RL = 10 Ω RL = 10 Ω RL = 10 Ω
tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs tp(g) > 20 µs
0.8 -0.8 -0.8 0.9
2 -2 -2 2
V
VT On-state voltage ITM = ±17 A IG = 50 mA (see Note 4) ±1.4 ±2.1 V
IH Holding current Vsupply = +12 V†
Vsupply = -12 V†
IG = 0 IG = 0
Init’ ITM = 100 mA Init’ ITM = -100 mA
22 -12
40
-40 mA
† All voltages are with respect to Main Terminal 1.
NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body.
2
P R O D U C T I N F O R M A T I O N
† All voltages are with respect to Main Terminal 1.
NOTE 5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
IL Latching current Vsupply = +12 V†
Vsupply = -12 V† (see Note 5) 80
-80 mA
dv/dt Critical rate of rise of
off-state voltage VD = Rated VD IG = 0 TC = 110°C ±400 V/µs
dv/dt(c) Critical rise of commutation voltage
VD = Rated VD di/dt = 0.5 IT(RMS)/ms
TC = 80°C
IT = 1.4 IT(RMS) ±1.2 ±9 V/µs
di/dt Critical rate of rise of on -state current
VD = Rated VD
diG/dt = 50 mA/µs IGT = 50 mA TC = 110°C ±100 A/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
GATE TRIGGER CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IGT - Gate Trigger Current - mA
0·1 1 10 100
1000 TC08AA
CASE TEMPERATURE vs
Vsupply IGTM + + + - - - - +
VAA = ± 12 V RL = 10 ΩΩ tp(g) = 20 µs
GATE TRIGGER VOLTAGE
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
VGT - Gate Trigger Voltage - V
0·1 1
10 TC08AB
CASE TEMPERATURE vs
VAA = ± 12 V RL = 10 ΩΩ
tp(g) = 20 µs Vsupply IGTM
+ + + -
- - - +
}
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
HOLDING CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IH - Holding Current - mA
0.1 1 10
100 TC08AD
CASE TEMPERATURE vs
VAA = ± 12 V IG = 0
Initiating ITM = 100 mA Vsupply
+ -
LATCHING CURRENT
TC - Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IL - Latching Current - mA
1 10 100
1000 TC08AE
CASE TEMPERATURE vs
VAA = ± 12 V Vsupply IGTM
+ + + - - - - +
4
P R O D U C T I N F O R M A T I O N TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO-220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø
1,231,32 4,20 4,70
1 2 3
0,97 0,66
10,0 10,4
2,54 2,95
6,0 6,6
14,55 15,32
12,7 14,1 5,6
6,1
1,07 1,47
2,34 2,74
4,68 5,28 3,71
3,96
0,41 0,64
2,40 2,90
NOTE A: The centre pin is in electrical contact with the mounting tab.
18,0 TYP.