20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N4960 2N4961 2N4962 2N4963
TO-39 CASE TO-18 CASE
TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960
NPN SILICON TRANSISTORS MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL 2N4960, 2N4962 Collector-Base Voltage VrjBO 60 Collector-Emitter Voltage VCEO 60 Emitter-Base Voltage VEBO 6.5
Collector Current lc 1.0
2N4960, 2N4961 Power Dissipation Prj 0.8
Power Dissipation (TC=25°C) PD 3-5 Operating & Storage June. Temp. Tj, Tsj.g -65 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONSICBO VCB=SOV 'EBO v
EB-4.ov
BVcBO lc=10vA (2N4960,2) BVCBo IC=10PA (2N4961.3)
BV
CEs l
c=10vA (2N4960.2)
BVcES IC=10PA (2N4961.3) BVcEO lc=10mA (2N4g60,2) BVQEO lrj=10mA (2N4961 ,3) BVEBO IE=10MAVCE(SAT) l£=10mA, lB=1.0mA VQE/C^T^ lfj= 150mA, !B=15mA
VCE(SAT) lc*300mA, lB=30mA
VCE(SAT) lc=500mA, lB=50mA
VBE(SAT) Ic-IOmA, lB=1.0mA
VBE(SAT) lc-150mA, !B»15mA
^BE(SAT) lQ=300mA, !B=30mA V
BE(SAT) i
c=500mA, i
B=somA
V
BE(ON) V
CE=IOV, i
c-i50mA
hpE VCE=10V, IC=100PA hpE VfjE=10V, lrj»1.0mA hpE VcE=10V, lc=10mA hfE VcE"10V, lrj*50mA hFE VCE-1.0V, lc=150mA hpE VcE=10V, lc=150mA hpE VrjE'lOV, lc=300mA hpE VcE=10V, l(;=500mA
fT VcE=10V, lc=50mA, f=100MHz C0b VCB=10V, lE=0, f=1.0MHz Cib VEB=0.5V, IC=0, f=1.0MHz
2N496I
2N4962
TO +200
M I N
60 80 60 80 60 80 6.5
0.78
30 60 90
10040
10070 45
100, 2N4963 80 80 6.5 1.0
, 2N4963 0.5 1.5
MAX 10 10
0.07
0.18 0.31 0.5 0.72
0.901.05 1.30 0.88
300
15 75
UNIT V V
V AW W
°C
UNIT nA nA V V V V V V V V V V V V V V V V
MHz pF PF
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.