to aucti, L/nc,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
ULTRA LOW r
EC(sat) SILICON EPITAXIAL JUNCTION NPN/PNP SWITCHING TRANSISTORS
2N6S66 2N6567
COMPLEMENTARY TYPES 2N6566(NPN)/2N6567(PNP) rE C (sat) 2 Ohms MAX.
LOW CM, LOW LEAKAGE HIGH BVEBO
ELECTRICAL DATA: ABSOLUTE MAXIMUM RATINGS PARAMETER
Collector to Emitter Voltage Emitter to Collector Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current Power Dissipation Derating Factor
Junction Temperature (operating and storage Lead Temperature (1/16" * 1/32" from case)
SYMBOl BVCGS BVecs BVceo BVEBO
Ic PC DF T»
TL
2N6566-2N6567 30 20 30 30 100 400 2.3 -66°C to +20Q*C 240'Cfor 10 sec.
UNITS Volts Volts Volts Volts mA mW mW/"C
ELECTRICAL CHARACTERISTICS: TA - 25aC (UNLESS OTHERWISE STATED)
PARAMETER Collector To Base Leakage Emitter to Base Leakage Collector To Base Leakage Emitter To Base Leakage Offset Voltage
DC Common Collector Forward Current Transfer Ratio High Frequency Current Gain Inverted
Dynamic Saturation Resistance Collector To Base Capacitance Emitter To Base Capacitance
SYMBOL ICBO IEBO ICBO IEBO Vo
HFC
hi*
rEC (Sat) Cob
C*>
CONDITION VCB - VcuMAX.
VEB - VEBMAX.
VCB -VcB MAX.
(TEMP = 100°C) VEB = VEBMAX.
(TEMP= 100°C) IB = 1mA le -0 VEC = 6V IE = 1mA
VCE = 6V, Ic = 1mA f - 1MC
I. = l.UmA .„ „ f = IkHi IB = 10mA
VCB » 6V, Ic - 1mA.f=159kHz VEB = 6V, IE - 0, f - 159kHz
2N6566-2N6567 Win.
— - - _
- 30 3 -
-
—
Typ.
0.2 0.2 30 30 0.7 - - 1.5
8 5
Max.
0.5 0.5 100 100 1.0 - - 2
10 6
UNITS nA nA nA nA mV - - Ohms
pfd pfd
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.