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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

© 1991, 2000

MOS FIELD EFFECT TRANSISTOR

2SK1399

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Document No. D14770EJ2V0DS00 (2nd edition) (Previous No.TC-2343)

Date Published March 2000 NS CP(K) Printed in Japan

The mark ★★★★ shows major revised points.

DESCRIPTION

The 2SK1399 is an N-channel vertical type MOS FET which can be driven by 2.5-V power supply.

The 2SK1399 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR cameras and headphone stereos which need power saving.

FEATURES

• Can be driven by a 3.0-V power source

• Not necessary to consider driving current because of it is high input impedance

• Possible to reduce the number of parts by omitting the bias resistor

• Can be used complementary with the 2SJ185

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK1399 SC-59 (Mini Mold)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C)

Drain to Source Voltage VDSS 50 V

Gate to Source Voltage VGSS ±7.0 V

Drain Current (DC) ID(DC) ±100 mA

Drain Current (pulse) Note ID(pulse) ±200 mA

Total Power Dissipation PT 200 mW

Channel Temperature Tch 150 °C

Operating Temperature Topt –55 to +80 °C

Storage Temperature Tstg –55 to +150 °C

Note PW ≤ 10 ms, Duty Cycle ≤ 50 %

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

PACKAGE DRAWING (Unit : mm)

2.8 ± 0.2

1.5 0.65

0.95 0.3

0.95

2.9 ± 0.2 1.1 to 1.4 0 to 0.1 0.16

+0.1 –0.06

2

1 3

+0.1 –0.05

0.4

+0.1 –0.05

0.4

Marking

+0.1–0.15

EQUIVALENT CIRCUIT

Source

Internal Diode

Gate Protection Diode Marking: G12 Gate

Drain Electrode

Connection 1.Source 2.Gate 3.Drain

(2)

ELECTRICAL CHARACTERISTICS (T

A

= 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain Cut-off Current IDSS VDS = 50V, VGS = 0V 10 µA

Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0V ±5.0 µA

Gate Cut-off Voltage VGS(off) VDS = 3.0V, ID = 1.0 µA 0.9 1.2 1.5 V

Forward Transfer Admittance | yfs| VDS = 3.0V, ID = 10 mA 20 38 mS

Drain to Source On-state Resistance RDS(on)1 VGS = 2.5V, ID = 10 mA 22 40 Ω

RDS(on)2 VGS = 4.0V, ID = 10mA 14 20 Ω

Input Capacitance Ciss VDS = 3.0V 8 pF

Output Capacitance Coss VGS = 0V 7 pF

Reverse Transfer Capacitance Crss f = 1MHz 3 pF

Turn-on Delay Time td(on) VDD = 3.0V 15 ns

Rise Time tr ID = 20mA 100 ns

Turn-off Delay Time td(off) VGS(on) = 3.0V 30 ns

Fall Time tf RG = 10Ω, RL = 150 Ω 35 ns

TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME

PG. RG

0 VGS

D.U.T.

RL

VDD

τ = 1 sµ

Duty Cycle ≤ 1 %

VGS Wave Form

ID Wave Form

VGS

10 %

VGS(on) 90 %

010 % ID

90 % 90 %

td(on) tr td(off) t f 10 %

τ

ID

0

ton toff

PG. 50 Ω

D.U.T.

RL

VDD

IG = 2 mA

(3)

Data Sheet D14770EJ2V0DS00

3 TYPICAL CHARACTERISTICS (T

A

= 25°C)

0 20 40 60 80 100 120 140 160 0

40 20 80

60 100

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

Tc - Case Temperature - ˚C

dT - Derating Factor - %

TA - Ambient Temperature - ˚C

PT - Total Power Dissipation - mW

0 0

120

30 60 90 150 180 210 240

50 100 150 200 250 300

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

ID - Drain Current - mA

0.5 1 1.5 2

20 60

40

0 0 80 100

2.5 V VGS = 4.5 V

4.0 V Pulse measurement

TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID - Drain Current - mA

7 8

5 6

3 4

0 1 2

100

10

1

0.1

0.01

VDS = 3.0 V Pulse measurement TA = 150˚C

75˚C 25˚C –25˚C

150 2.0

1.5

1.0

0.5

50 100

0

Tch - Channel Temperature - ˚C

VGS(off) - Gate to Source Cut-off Voltage - V

VDS = 3.0 V ID = 1 µA GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

10 20 50 100 200 500 1000 ID - Drain Current - mA

| yfs | - Forward Transfer Admittance - mS

100 200 500 1000

10 20 50

1 5

VDS = 5.0 V f = 1 kHz

(4)

Pulse measurement DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

20 30

VGS - Gate to Source Voltage - V

RDS (on) - Drain to Source On-State Resistance -

10

0

5 10

0 1 2 3 4 6 7 8 9

ID = 100 mA

10 mA

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

1 2 5 10 20 60

ID - Drain Current - mA

RDS(on) - Drain to Source On-State Resistance -

100

1 2

0.6 0

5 10 20 50

4.0 V VGS = 2.5 V Pulse

measurement

(5)

Data Sheet D14770EJ2V0DS00

5

[MEMO]

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[MEMO]

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Data Sheet D14770EJ2V0DS00

7

[MEMO]

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• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)

Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

M7 98. 8

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