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2N5629

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2N6029

COMPLEMENTARY HIGH POWER TRANSISTORS

DESCRIPTION

The 2N5629 (NPN) and 2N6029 (PNP) are comple­

mentary silicon epitaxial-base transistors in Jedec TO-3 metal case. They are intended for high power audio amplifier applications and switching regular circuits.

INTERNAL S CHEM ATIC DIAG RA MS

ABSOLUTE MAXIMUM RATINGS

S y m b o l P a r a m e t e r V a l u e U n it

VcEO Collector-emitter Voltage (I b= 0) 100 V

VcBO Collector-base Voltage (Ie=0) 100 V

Veb o Emitter-base Voltage (lc = 0) 7 V

• c Collector Current 16 A

IcM Collector Peak Current 20 A

b Base Current 5 A

P t o t Total Power Dissipation at T c a s e £ 25°C 200 W

T "st g Storage Temperature - 65 to 200 °C

Ti Junction Temeprature 200 °C

For PNP type voltage and current values are negative.

December 1988 1/5

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THERMAL DATA

*th j-case Thermal Resistance Junction-case Max 0.875 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d it io n s M in . T y p . M a x . U n it

I c E O Collector Cutoff Current

(Ib = 0)

VCE = 50V 1 mA

Ie b o Emitter Cutoff Current (lc = 0)

VEB =7V 1 mA

I c B O Collector Cutoff Current

(Ie =0)

VCB = 100V 1 mA

I c E V Collector-emitter Cutoff

Current (VBE = - 1.5V) < < oo mm II II o o 0o < < —I

0)

tD II 01 o 6

1 5

< <EE

V c E O ( s u s ) * Collector-emitter Sustaining

Voltage ( lB = 0)

lc = 200mA 100 V

hFE* DC Current Gain lc =8A Vc e = 2V

lc = 16A Vc e=2V

25 4

100

V c E ( s a t ) ' Collector-emitter Saturation

Voltage

< <x--Fi­ll ||CO CD

< <O CDII II_o _o 1

2 V V

V B E ( s a t ) * Base-emitter Saturation

Voltage lc =10A lB = 1A 1.8 V

*LUCD>

Base-emitter Voltage |c = 8A V Ce= 2V 1.5 V

fr Transition Frequency lc = 1 A VCE = 20V f = 0.5MHz

1 MHz

C c B O Collector-base Capacitance Vc b = 10V l B = 0

f = 0.1 MHz for 2N6029

500 1000

pF pF hfe Small Signal Current Gain > 0 II o >

N<x^ *II T_

0 1

15

* Pulsed : pulse duration = 300 ps, duty cycle < 2 %.

For PNP type voltage and current values are negative.

Safe Operating Areas. DC Current Gain (NPN type).

2/5 r = Z

SCS-THOMSON

■“ ■7# WCRSfflUSCTHIBWIlC*

(3)

DC Current Gain (NPN type).

&-S287

DC Current Gain (PNP type).

0 10-' I lB (A )

DC Current Gain (PNP type).

10*’ 1 10 - ^ ( A )

Collector-emitter Saturation Voltage (PNP type).

G-5195

Tin M i n

li _LT1 li d

hFE = 10

j|

.1" ||

.

10-’ 1 10 lc (A )

Collector-emitter Saturation Voltage (PNP type).

io-* i _i b(a)

T SGS-THOMSON

^ 7 # MD(gR(m[Ke?[MG(ga

3/5

(4)

Saturation Voltage (PNP type). Base-emitter Voltage (PNP type).

10-' 1 10 lc ( A )

Base-emitter Saturation Voltage (PNP type).

( V )

10-’ 1 10 l c (A )

Capacitances (NPN type).

1 * 1 1 t 4 C • > 4 1 1

D J 1 K> V (V )

Capacitances (PNP type). Turn-on Time (NPN type).

4/5 r Z

T SGS-THOMSON

* • / # aaiCHiBIBJCTBlBMC*

(5)

Turn-off Time (NPN type). Turn-on Time (PNP type).

Turn-off Time (PNP type).

10-' 1 10 IC( A )

r Z

T SGS-THOMSON maamxmsme*

5/5

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