2N6029
COMPLEMENTARY HIGH POWER TRANSISTORS
DESCRIPTION
The 2N5629 (NPN) and 2N6029 (PNP) are comple
mentary silicon epitaxial-base transistors in Jedec TO-3 metal case. They are intended for high power audio amplifier applications and switching regular circuits.
INTERNAL S CHEM ATIC DIAG RA MS
ABSOLUTE MAXIMUM RATINGS
S y m b o l P a r a m e t e r V a l u e U n it
VcEO Collector-emitter Voltage (I b= 0) 100 V
VcBO Collector-base Voltage (Ie=0) 100 V
Veb o Emitter-base Voltage (lc = 0) 7 V
• c Collector Current 16 A
IcM Collector Peak Current 20 A
•b Base Current 5 A
P t o t Total Power Dissipation at T c a s e £ 25°C 200 W
T "st g Storage Temperature - 65 to 200 °C
Ti Junction Temeprature 200 °C
For PNP type voltage and current values are negative.
December 1988 1/5
THERMAL DATA
*th j-case Thermal Resistance Junction-case Max 0.875 °C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise specified)
S y m b o l P a r a m e t e r T e s t C o n d it io n s M in . T y p . M a x . U n it
I c E O Collector Cutoff Current
(Ib = 0)
VCE = 50V 1 mA
Ie b o Emitter Cutoff Current (lc = 0)
VEB =7V 1 mA
I c B O Collector Cutoff Current
(Ie =0)
VCB = 100V 1 mA
I c E V Collector-emitter Cutoff
Current (VBE = - 1.5V) < < oo mm II II o o 0o < < —I
0)
tD II 01 o 61 5
< <EE
V c E O ( s u s ) * Collector-emitter Sustaining
Voltage ( lB = 0)
lc = 200mA 100 V
hFE* DC Current Gain lc =8A Vc e = 2V
lc = 16A Vc e=2V
25 4
100
V c E ( s a t ) ' Collector-emitter Saturation
Voltage
< <x--Fill ||CO CD
< <O CDII II_o _o 1
2 V V
V B E ( s a t ) * Base-emitter Saturation
Voltage lc =10A lB = 1A 1.8 V
*LUCD>
Base-emitter Voltage |c = 8A V Ce= 2V 1.5 V
fr Transition Frequency lc = 1 A VCE = 20V f = 0.5MHz
1 MHz
C c B O Collector-base Capacitance Vc b = 10V l B = 0
f = 0.1 MHz for 2N6029
500 1000
pF pF hfe Small Signal Current Gain > 0 II o >
N<x^ *II T_
0 1
15* Pulsed : pulse duration = 300 ps, duty cycle < 2 %.
For PNP type voltage and current values are negative.
Safe Operating Areas. DC Current Gain (NPN type).
2/5 r = Z
SCS-THOMSON
■“ ■7# WCRSfflUSCTHIBWIlC*
DC Current Gain (NPN type).
&-S287
DC Current Gain (PNP type).
0 10-' I lB (A )
DC Current Gain (PNP type).
10*’ 1 10 - ^ ( A )
Collector-emitter Saturation Voltage (PNP type).
G-5195
Tin M i n
li _LT1 li d
hFE = 10
j|
.1" ||
.
10-’ 1 10 lc (A )
Collector-emitter Saturation Voltage (PNP type).
io-* i _i b(a)
T SGS-THOMSON
^ 7 # MD(gR(m[Ke?[MG(ga
3/5
Saturation Voltage (PNP type). Base-emitter Voltage (PNP type).
10-' 1 10 lc ( A )
Base-emitter Saturation Voltage (PNP type).
( V )
10-’ 1 10 l c (A )
Capacitances (NPN type).
1 * 1 1 t 4 C • > 4 1 1
D J 1 K> V (V )
Capacitances (PNP type). Turn-on Time (NPN type).
4/5 r Z
T SGS-THOMSON
* • / # aaiCHiBIBJCTBlBMC*
Turn-off Time (NPN type). Turn-on Time (PNP type).
Turn-off Time (PNP type).
10-' 1 10 IC( A )
r Z
T SGS-THOMSON maamxmsme*
5/5