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2N6786

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IZIIEU <^>£.mi-(-on.a\jickoi Lptoaucti., Una.

CX J

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

2N6786

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

N-Channel Enhancement-Mode Power MOS Field-Effect Transistor

Description

The 2N6786 is an n-channel enhancement-mode silicon-gate power MOS field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. This type can be operated directly from integrated circuits.

The 2N6786 is supplied in the JEDEC TO-205AF (Low Profile TO-39) metal package.

Features

• 1.25A, 400V

• «t>S(on) = 3-6n

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

Absolute Maximum Ratings Oc - +25°C) Unless Otherwise Specified

Drain-Source Voltage VDS

Drain-Gate Voltage (RGS = 20kn) VDGR Continuous Drain Current

TC = +25°C 'D TC = +100°C 'D Pulsed Drain Current 'DM

Gate-Source Voltage VGS

Continuous Source Current 'S Pulse Source Current 'SM Maximum Power Dissipation

TC = +25°C (See Figure 14) PD Above TC = +25°C, Derate Linearly (See Figure 14)

Inductive Current, Clamped 'LM (L=100p.H)

Operating and Storage Junction Temperature Range Tj, TSTG Maximum Lead Temperature for Soldering TL

(0.063" (1.6mm) from case for 10s)

2N6786

400*

400*

1.25*

0.8*

5.5*

±20*

1.25*

5.5*

15*

0.12*

5.5 -55 to +150*

300*

UNITS V V

A A A V A A

W

W/QC

A

°C

oc

N.I .Semi-Conductors reserves the right to change lest conditions, parameter limit* :md packuge Jimensions without notice

Information turrmhtd by NJ Semi-t unductors h believed to he both accurate and reliable .it the time of going to press. However S I Semi-<_ oiuluclors .b.Miincs no responsibility tor my errors >>r omission* discovered in its H.-.C NJ Semi-Cnmlin.ti.

n;fiHUTS rn vcrit\h 11 iliilivjhivn iw i nrrt'nt h<ftire Dlntiim

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ELECTRICAL CHARACTERISTICS at Tc = 25'C (Unless Otherwise Sptclfltd)

CHARACTERISTIC

Drain-Source Breakdown Voltage BVoss Gate Threshold Voltage VQ8(th) Gate-Source Leakage Forward loss Gate-Source Leakage Reverse loaa Zero-Gate Voltage Drain Current loss On-State Voltage* Vos(on) Static Drain-Source On-State Resistance* ros(on) Diode Forward Voltage* V8o Forward Transconductance* gt.

Input Capacitance CIM

Output Capacitance COM Reverse Transfer Capacitance Cm Turn-On Delay Time td(on) Rise Time t, Turn-Of Delay Time Woff) Fall Time tf Safe Operating Area SOA

TEST CONDITIONS VQS = 0 V, lo = 0.25 mA

VQS ~ Voa, lo = 0.5 mA Vos - 20 V, VDS = 0 V Vos = -20 V. Vos - 0 V Vos = 400 V, Vos = 0 V Vos = 320 V, Vas = 0 V, Tc = 125°C

Vos = 10V, lo = 1.25A Vas • 10 V, lo = 0.8 A, TA = 25°C VQS = 10 V, ID = 0.8 A, TA = 125° C

Tc » 25°C, Is = 1.25 A, Vas = 0 V Vos = 5 V, lo = 0.8 A Vos = 0 V, VDS * 25 V, f = 1 MHz

See Fig. 10

Voo = 170 V, lo = 0.8 A, Zo - 50 n See Fig. 15. (MOSFET switching times are essentially independent

of operating temperature.) Vos * 200 V. ID = 75 mA, See Fig. 16.

Vos - 12 V, ID = 1.25 A, See Fig. 16.

LIMITS Mln.

400*

2.0*

— 0.6' 0.7*

60*

15*

2*

— 15 15

Typ.

3.3

— 1.2 135 35

8

— Max.

— 4.0*

100*

100*

250*

1000*

4.5*

3.6*

7.92*

1.4*

2.1*

200*

50*

15*

15*

20*

35*

30*

UNITS

V

nA

M V

n

V S(U)

PF

ns

W

THERMAL RESISTANCE

Junction-to-Case Rgic

Junction-to-Ambient R0,A Free Air Operation

_— 8.33*

175 °C/W

SOURCE-DRAIN DIODE SWITCHING CHARACTERISTICS (TYPICAL) Reverse Recovery Time tn

Reverse Recovered Charge Qnn

Forward Turn-On Time ton

Tj=150°C, U=1.25 A, diF/dt=100 A/fia Tj=150°C, lF=1.25 A, diF/dt=100 A/fis

380 2.7

ns HC Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by U + Lo.

'JEDEC registered value.

•Pulse Test: Pulse width £ 300 fa, duty cycle < 2%.

Cytaty

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