FJP13007

— High V o lt age Fast-S witching NPN Power T ransistor

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. A 1

July 2008

FJP13007

High Voltage Fast-Switching NPN Power Transistor

High Voltage High Speed Power Switch Application

• High Voltage Capability

• High Switching Speed

• Suitable for Electronic Ballast and Switching Mode Power Supply

Absolute Maximum Ratings

Symbol Parameter Value Units

V_CBO Collector-Base Voltage 700 V

V_CEO Collector-Emitter Voltage 400 V

V_EBO Emitter-Base Voltage 9 V

I_C Collector Current (DC) 8 A

I_CP Collector Current (Pulse) 16 A

I_B Base Current 4 A

P_C Collector Dissipation (T_C = 25°C) 80 W

T_J Junction Temperature 150 °C

T_STG Storage Temperature -65 ~ 150 °C

1.Base 2.Collector 3.Emitter

1 TO-220

— High V o lt age Fast-S witching NPN Power T ransistor Electrical Characteristics

* Pulse Test: PW ≤ 300μs, Duty Cycle ≤ 2%

h _FE Classification

Symbol Parameter Conditions Min. Typ. Max Units

BV_CEO Collector-Emitter Breakdown Voltage I_C = 10mA, I_B = 0 400 V

I_EBO Emitter Cut-off Current V_EB = 9V, I_C = 0 1 mA

h_FE1 h_FE2

DC Current Gain * V_CE = 5V, I_C = 2A V_CE = 5V, I_C = 5A

8 5

60 30 V_CE(sat) Collector-Emitter Saturation Voltage I_C = 2A, I_B = 0.4A

I_C = 5A, I_B = 1A I_C = 8A, I_B = 2A

1.0 2.0 3.0

V V V V_BE(sat) Base-Emitter Saturation Voltage I_C = 2A, I_B = 0.4A

I_C = 5A, I_B = 1A

1.2 1.6

V V

f_T Current Gain Bandwidth Product V_CE = 10V, I_C = 0.5A 4 MHz

C_ob Output Capacitance V_CB = 10V, f = 0.1MHz 110 pF

t_ON Turn On Time V_CC = 125V, I_C = 5A

I_B1 = -I_B2 = 1A R_L = 25Ω

1.6 μs

t_STG Storge Time 3.0 μs

t_F Fall Time 0.7 μs

Classification H1 H2

h_FE1 15 ~ 28 26 ~ 39

— High V o lt age Fast-S witching NPN Power T ransistor

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. A 3

Typical Characteristics

Figure 1. DC Current Gain Figure 2. Saturation Voltage

Figure 3. Collector Output Capacitance Figure 4. Turn On Time

Figure 5. Turn Off Time Figure 6. Forward Biased Safe Operating Area

0.1 1 10

1 10 100

V_CE = 5V

hFE, DC CURRENT GAIN

I_C[A], COLLECTOR CURRENT

0.1 1 10 100

0.01 0.1 1 10

I_C = 3 I_B

V_CE(sat) V_BE(sat)

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

I_C[A], COLLECTOR CURRENT

0.1 1 10 100 1000

1 10 100 1000

Cob[pF], OUTPUT CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10

10 100 1000

V_CC=125V I_C=5I_B

t_D, V_BE(off)=5V t_R

tR, tD [ns], TURN ON TIME

I_C[A], COLLECTOR CURRENT

0.1 1 10

10 100 1000 10000

V_CC=125V I_C=5I_B

t_F t_STG

tSTG, tF [ns], TURN OFF TIME

I_C[A], COLLECTOR CURRENT

1 10 100 1000

0.01 0.1 1 10 100

10μs 100μs DC 1ms

IC[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

— High V o lt age Fast-S witching NPN Power T ransistor

Typical Characteristics

Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating

10 100 1000 10000

0.01 0.1 1 10 100

Vcc=50V, I_B1=1A, I_B2 = -1A L = 1mH

IC[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0 10 20 30 40 50 60 70 80 90 100

PC[W], POWER DISSIPATION

T_C[^oC], CASE TEMPERATURE

— High V o lt age Fast-S witching NPN Power T ransistor

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FJP13007 Rev. A 5

Mechanical Dimensions

TO220

High V o lt age Fast-Swi tc hing NPN Power T rans istor