BUT33

(1)



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The BUT33 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as:

• AC and DC Motor Controls

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Fast Turn Off Times

800 ns Inductive Fall Time at 25 _ C (Typ) 2.0 µ s Inductive Storage Time at 25 _ C (Typ)

• Operating Temperature Range – 65 to 200 _ C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

BUT33

ÎÎÎÎ

Unit

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎÎÎ

600

ÎÎÎÎ

Vdc

Emitter Base Voltage

ÎÎÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎ

10

ÎÎÎÎ

Vdc

Collector Current — Continuous Collector Current — Peak (1)

ÎÎÎÎÎÎÎ

IC ICM

ÎÎÎÎÎÎÎÎ

56 75

ÎÎÎÎ

Adc

Base Current — Continuous Base Current — Peak (1)

ÎÎÎÎÎÎÎ

IB IBM

ÎÎÎÎÎÎÎÎ

12 15

ÎÎÎÎ

Adc

Free Wheel Diode Forward Current — Continuous Free Wheel Diode Forward Current — Peak

ÎÎÎÎÎÎÎ

IF IFM

ÎÎÎÎÎÎÎÎ

56 75

ÎÎÎÎ

Adc

Total Power Dissipation @ TC = 25_ C

@ TC = 100_ C Derate above 25 _ C

ÎÎÎÎÎÎÎ

PD

ÎÎÎÎÎÎÎÎ

250 140

ÎÎÎÎ

Watts W/ _ C

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎ

– 65 to + 200

ÎÎÎÎ

_ C

THERMAL CHARACTERISTICS

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

R θJC

ÎÎÎÎÎÎÎÎ

0.7

ÎÎÎÎ

_ C/W

Maximum Lead Temperature for Soldering Purpose 1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎÎ

TL

ÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

_ C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUT33/D

56 AMPERES NPN SILICON POWER DARLINGTON

TRANSISTOR 600 VOLTS 250 WATTS

CASE 197A–05 TO–204AE

(TO–3)

≈ 100 ≈ 16

REV 7

(2)

BUT33

ELECTRICAL CHARACTERISTICS _{(TC = 25_} C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

400

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_ C)

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.2 4.0

ÎÎÎ

mAdc

Emitter Cutoff Current (VEB = 20 V, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

350

ÎÎÎ

mAdc

SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased

ÎÎÎÎ

IS/b

ÎÎÎÎ

ÎÎÎÎÎÎÎ

See Figure 16

ÎÎÎ

ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with Base Reverse Biased

ÎÎÎÎ

RBSOA

ÎÎÎÎ

ÎÎÎÎÎÎÎ

See Figure 17

ÎÎÎ

ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

DC Current Gain (IC = 20 A, VCE = 5 V) (IC = 36 A, VCE = 5 V)

ÎÎÎÎ

hFE

ÎÎÎÎ

30 20

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (IC = 20 A, IB = 1 A)

(IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) (IC = 56 A, IB = 11.2 A)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.0 2.5 3.0 5.0

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage (IC = 20 A, IB = 1 A)

(IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.5 2.9 3.3

ÎÎÎ

Vdc

Diode Forward Voltage (IF = 44 A)

ÎÎÎÎ

Vf

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

4.0

ÎÎÎ

Vdc

SWITCHING CHARACTERISTICS Inductive Load Clamped (Table 1)

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

TC = 25_ C IC = 36 A

ÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎÎ

3.3

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

IB = 3.6 A

ÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎÎ

1.6

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

See Table 1

TC = 100_ C VBE(off) = 5 V

ÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎÎ

2.2

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

See Table 1

TC = 100_ C VBE(off) = 5 V

ÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎÎ

—

ÎÎÎ

µs

(1) Pulse Test: PW = 300 µ s, Duty Cycle 2%.

(3)

BUT33 TYPICAL CHARACTERISTICS

V CE , COLLECT OR–EMITTER VOL TAGE (VOL TS) V CE , COLLECT OR–EMITTER VOL TAGE (VOL TS)

3.2

1 IC, COLLECTOR CURRENT (AMPS)

2 3 7 10 50

2.8 2.5 2.2 1.9 2.5

IC, COLLECTOR CURRENT (AMPS) 2.2

1.9 1.6 1.3 1.0 0.7 0.4

TC = 25° C IC/IB = 10

1.6 1.3

20 IC = 40 A 400

1 Figure 1. DC Current Gain IC, COLLECTOR CURRENT (AMPS)

1 2 3 4 6 10 20 30 40 60

100 30 20 10

Figure 2. Collector Saturation Region 0.1

IB, BASE CURRENT (AMPS)

0 0.2 0.3 0.5 1

4

3

2 1 200

50 h FE , DC CURRENT GAIN

5 3 2

TC = 25 °C VCE = 5.0 V

IC = 20 A

TC = 25° C

2 3 5 7 10

Figure 3. Collector–Emitter Saturation Voltage

30 5

1 2 3 5 7 10 20 30 50

TC = 25° C IC/IB = 10

V BE , BASE–EMITTER VOL TAGE (VOL TS)

1.0 Figure 4. Base–Emitter Voltage

t, TIME (ms) 1

0.01 0.01 0.5

0.2 0.1 0.05

0.02 r(t) , EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

R θ JC(t) = r(t) R θ JC R θ JC(t) = 1.17° C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t)

P(pk)

t1 t2

DUTY CYCLE, D = t1/t2 D = 0.5

0.2 0.05 0.02

0.01 SINGLE PULSE

0.1 0.7

0.3

0.07

0.03 0.02 0.1 0.2 0.5

RESIST ANCE (NORMALIZED)

1000

Figure 5. Thermal Response

0.03 0.3 3 30 300

(4)

Table 1. Test Conditions for Dynamic Performance

VCEO(sus) RBSOA AND INDUCTIVE SWITCHING TEST CIRCUIT

for FREE–WHEEL

DIODE

INPUT CONDITIONS CIRCUIT V ALUES TEST CIRCUITS

PW Varied to Attain IC = 100 mA

Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µ H Rcoil = 0.05 Ω VCC = 10 V

INDUCTIVE TEST CIRCUIT

t1 Adjusted to Obtain IC t1 [ Lcoil (ICM)

VCC t2 [ Lcoil (ICM)

Vclamp Test Equipment Scope — Tektronix 475 or Equivalent OUTPUT WAVEFORMS

1 INPUT

2 Rcoil Lcoil

Vclamp VCC RS = 0.1 Ω 1N4937

OR EQUIVALENT TUT

SEE ABOVE FOR DETAILED CONDITIONS

20 Ω 1 5 V

0

2 220 100

680 pF 100 PULSES

δ = 3%

33 2 W

160 D1 22 µF

D3

680 pF 22 MM3735

1N4934 D1 D2 D3 D4

2N3763

160 680 pF 22

D4

22 µ F D3

2N6438 +10 V

MR854

1 µF

2N6339 MR854 Ib1 ADJUST dTb ADJUST

DRIVER +

–

VD

ID

VD

ID 510

AV up to 50 V

CRONETICS PG130

up to 50 V 5 µs dT

Ib2 ADJUST

VCC

ICM

VCEM IC

VCE

t1 tf t

tf Clamped

t2 TIME

Vclamp t

1%

Ib2/Ib1 10

βf, FORCED GAIN 8

6 5 4

3 2

1 15

1 Figure 6. Fall Time versus IB2/IB1 Ib2/Ib1

0.1 2 3 4 5 6 7 8 9 10

5 2 1

Figure 7. Turn–Off Time versus IC 5

1 IC, COLLECTOR CURRENT (AMPS)

0.1 2 3 5 7 10

4 3 2

1 10

3 IC = 50 A

0.5 0.3 0.2

TC = 25° C IC/IB = 5

20 30 50

40°C

IC = 25 A

1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10

IC = 25 A

IC = 50 A TC = 25° C

VBE(off) = 5 V

t, TIME ( s) µ t, TIME ( s) µ t, TIME ( s) µ t, TIME ( s) µ

0.5 0.3

0.2 IC/IB = 10

10 V TC = 25 °C IC/IB = 20

tF IC = 20 A

VBE(off) = 5 V σ tF = 200 ns

σ tS = 400 ns tS

10 V

IC = 25 A

IC = 50 A

10 8 6 5 4

3 2

1 TC = 25° C IC/IB = 5 VBE(off) = 5 V

IC = 10 A

(5)

BUT33 FREE–WHEEL DIODE CHARACTERISTICS

T µ FR , FOR W ARD RECOVER Y TIME ( s) T µ RR , REVERSE RECOVER Y TIME ( s)

I E , EMITTER CURRENT (AMPS)

Figure 10. Free Wheel Diode Measurements Figure 11. Forward Voltage 0

VEC, EMITTER COLLECTOR VOLTAGE (VOLTS)

0 1 2 3 4 5

10

0 Figure 12. Forward Modulation Voltage IE, EMITTER CURRENT (AMPS)

10 30

0 Figure 13. Peak Reverse Recovery Current 30

25

15 10 20

5

50 IE, EMITTER CURREMT (AMPS)

20 40 0 10 20 30 40 50

20 50

40

30

0 Figure 14. Forward Recovery Time IE, EMITTER CURRENT (AMPS)

0.8 10 20 40 50

2.0 1.6 1.4 1.2

Figure 15. Reverse Recovery Time 0

IE, EMITTER CURRENT (AMPS)

0.3 10 20 30 40 50

3 2 2.2

1.8

1.0

30 15 10 7 I RM

, PEAK REVERSE RECOVER Y CURRENT (AMPS)

V dyn , FOR W ARD MODULA TION VOL TAGE (VOL TS)

– σ +σ

0 50

40 20 30

10

5 1 0.7 0.5 40°C

Id

1 0

VD DYN

10 (VDYN VFM) VFM TFR

I IFM

IRM trr

t 25 IRM di/dt = 25 A/µs

TC = 25° C

TC = 25 °C

TC = 25° C TC = 25 °C

(6)

The Safe Operating Area figures shown in Figures 16 and 17 are specified for the devices under the test conditiond shown.

1 Figure 16. Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5 30

0.1 60 30

3.0 1.0 10

0.5 1000

10 100

0 Figure 17. Reverse Bias Safe Operating Area VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0 200 400

40 20 60

600 TC = 25 °C

IC/IB = 10

I C , COLLECT OR CURRENT (AMPS)

0.3 300 DC

1 ms

10 µs

VBE(off) = 5 V

I CM

, PEAK COLLECT OR CURRENT (AMPS)

TC = 25° C

100 µ s

SAFE OPERATING AREA INFORMATION FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate.

The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC y 25 _ C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case tem- perature by using the appropriate curve on Figure 18.

TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode Figure 17 gives the RBSOA character- istics.

0 Figure 18. Power Derating IC, CASE TEMPERATURE (° C)

0 40 80

80 40 100

120 POWER DERA TING (F ACT OR)

160 200

60

20 SECOND BREAKDOWN DERATING

THERMAL

DERATING

(7)

BUT33 PACKAGE DIMENSIONS

CASE 197A–05 TO–204AE (TO–3)

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE 2. EMITTER CASE: COLLECTOR

DIM MIN MAX MIN MAX MILLIMETERS INCHES

A 1.530 REF 38.86 REF B 0.990 1.050 25.15 26.67 C 0.250 0.335 6.35 8.51 D 0.057 0.063 1.45 1.60 E 0.060 0.070 1.53 1.77 G 0.430 BSC 10.92 BSC H 0.215 BSC 5.46 BSC K 0.440 0.480 11.18 12.19 L 0.665 BSC 16.89 BSC N 0.760 0.830 19.31 21.08 Q 0.151 0.165 3.84 4.19 U 1.187 BSC 30.15 BSC V 0.131 0.188 3.33 4.77

A N

E

C

K

–T– ^SEATING _PLANE

D 2 PL

Q M

0.30 (0.012) M T Y ^M

Y M

0.25 (0.010) M T –Q–

–Y–

2

1 L

G B

V

H

U

(8)

How to reach us:

USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

BUT33

Full text

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The BUT33 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as:

• AC and DC Motor Controls

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Fast Turn Off Times

800 ns Inductive Fall Time at 25 _ C (Typ) 2.0 µ s Inductive Storage Time at 25 _ C (Typ)

• Operating Temperature Range – 65 to 200 _ C

MAXIMUM RATINGS

Rating

Symbol

BUT33

Unit

Collector–Emitter Voltage

VCEO(sus)

400

Vdc

Collector–Emitter Voltage

VCEV

600

Vdc

Emitter Base Voltage

VEB

10

Vdc

Collector Current — Continuous Collector Current — Peak (1)

IC ICM

56 75

Adc

Base Current — Continuous Base Current — Peak (1)

IB IBM

12 15

Adc

Free Wheel Diode Forward Current — Continuous Free Wheel Diode Forward Current — Peak

IF IFM

56 75

Adc

Total Power Dissipation @ TC = 25_ C

@ TC = 100_ C Derate above 25 _ C

PD

250 140

Watts W/ _ C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_ C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R θJC

0.7

_ C/W

Maximum Lead Temperature for Soldering Purpose 1/8″ from Case for 5 Seconds

TL

275

_ C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle x 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.



SEMICONDUCTOR TECHNICAL DATA

Order this document by BUT33/D



56 AMPERES NPN SILICON POWER DARLINGTON

TRANSISTOR 600 VOLTS 250 WATTS

CASE 197A–05 TO–204AE

(TO–3)

≈ 100 ≈ 16

REV 7

BUT33



!"

%! !#

!""#!" %# "##!

$

ELECTRICAL CHARACTERISTICS _{(TC = 25_} C unless otherwise noted)