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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

MOS FIELD EFFECT TRANSISTOR

2SK3297

SWITCHING

N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION

The 2SK3297 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

•Low gate charge

QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)

•Gate voltage rating ±30 V

•Low on-state resistance

RDS(ON) = 1.6 Ω MAX. (VGS = 10 V, ID = 2.5 V)

•Avalanche capability ratings

•Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current(DC) (TC = 25°C) ID(DC) ±5.0 A

Drain Current(pulse) Note1 ID(pulse) ±20 A

Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg −55 to +150 °C

Single Avalanche Current Note2 IAS 5.0 A

Single Avalanche Energy Note2 EAS 16.7 mJ

Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 →0 V

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3297 Isolated TO-220

(Isolated TO-220)

(2)

ELECTRICAL CHARACTERISTICS (T

A

= 25°C)

Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit

Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA

Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA

Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V

Forward Transfer Admittance | yfs| VDS = 10 V, ID = 2.5 A 1.5 S

Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 2.5 A 1.3 1.6

Input Capacitance Ciss VDS = 10 V 750 pF

Output Capacitance Coss VGS = 0 V 130 pF

Reverse Transfer Capacitance Crss f = 1 MHz 9.7 pF

Turn-on Delay Time td(on) VDD = 150 V, ID = 2.5 A 17 ns

Rise Time tr VGS(on) = 10 V 3 ns

Turn-off Delay Time td(off) RG = 10 Ω 37 ns

Fall Time tf 10 ns

Total Gate Charge QG VDD = 450 V 18 nC

Gate to Source Charge QGS VGS = 10 V 4 nC

Gate to Drain Charge QGD ID = 5.0 A 7 nC

Body Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 V 0.9 V

Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 1.4 µs

Reverse Recovery Charge Qrr di/dt = 50 A/µs 5.3 µC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25 Ω PG. 50 Ω

L

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG. RG

0 VGS

D.U.T.

RL

VDD

τ = 1 sµ Duty Cycle ≤ 1%

VGS Wave Form

ID Wave Form

VGS 10%

VGS(on) 90%

010%

ID

90%

90%

td(on) tr td(off) tf 10%

τ

ID 0

ton toff

PG. 50 Ω

D.U.T.

RL

VDD

IG = 2 mA

(3)

TYPICAL CHARACTERISTICS

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

ID - Drain Current - A

00 10 30 40

8 6

4 12

10

20

Pulsed 2

VGS =10 V 8.0 V

6.0 V

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID - Drain Current - A

Pulsed

0 5 10 15

VDS = 10 V 10

1

0.1

0.01 100

Tch = −25˚C 25˚C 75˚C 125˚C

GATE TO SOURCE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VGS(off) - Gate to Source Cut-off Voltage - V

VDS = 10 V ID = 1 mA

0 1 2 3 4

−50 0 50 100 150

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

Pulsed VDS = 10 V

| yfs | - Forward Transfer Admittance - S

ID - Drain Current - A

10 1

0.1 0.1

1 10

Tch = −25˚C 25˚C 75˚C 125˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - V

RDS(on) - Drain to Source On-state Resistance -

0 5 10 15 20

2 4

3

0 1

Pulsed

ID = 5.0 A 2.5 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

ID - Drain Current - A

RDS(on) - Drain to Source On-state Resistance -

1

10 1

0.1 2 3 4

100 Pulsed

0

VGS = 10 V 20 V

(4)

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

RDS(on) - Drain to Source On-state Resistance -

0−50 2

1

0 50 100 150

4

3

2.5 A VGS = 10 V

Pulsed

ID = 5.0 A

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

ISD - Diode Forward Current - A

0 1.5

VSD - Source to Drain Voltage - V 1 0.5

Pulsed

0.1

0.01 1 10 100

0 V VGS = 10 V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

Ciss, Coss, Crss - Capacitance - pF

0.1 10

1 100 1000 10000

1 10 100 1000

VGS = 0 V f = 1 MHz

Coss

Crss Ciss

SWITCHING CHARACTERISTICS

ID - Drain Current - A

td(on), tr, td(off), tf - Switching Time - ns

10

1

0.1 1

100

10 tf

tr

td(on)

td(off)

VDD = 150 V VGS = 10 V RG = 10 Ω

REVERSE RECOVERY TIME vs.

DIODE FORWARD CURRENT

ISD - Diode Forward Current - A

trr - Reverse Recovery Time - ns

di/dt = 50 A/ s VGS = 0 V 0.1

100

1 10

10000

1000

µ

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VGS - Gate to Source Voltage - V

QG - Gate Charge - nC

VDS - Drain to Source Voltage - V

0

0 8 16 24 32

400

200 600

4 2 0 8 6

VDS

16 14 12 10

VGS

ID = 5.0 A

VDD = 450 V 300 V 150 V

(5)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

Tch - Channel Temperature - ˚C

dT - Percentage of Rated Power - %

0 20 40 60 80 100 120 140 160 0

20 40 60 80 100

TC - Case Temperature - ˚C

PT - Total Power Dissipation - W

0

0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

10 20 30 40

FORWARD BIAS SAFE OPERATING AREA

1 10 100 1000

ID - Drain Current - A

0.1

VDS - Drain to Source Voltage - V 100

10

1

Power Dissipation Limited 100

µs 3 ms1 ms 10 ms

PW = 10

µs ID(DC)

ID(pulse)

30 ms 100 ms TC = 25˚C

Single Pulse RDS(on)

Limited (@V

GS = 10 V)

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t) - Transient Thermal Resistance - ˚C/W

10

0.01 0.1 1 100

1 m 10 m 100 m 1 10 100 1000

Single Pulse

10 100

Rth(ch-C) = 3.57˚C/W

µ µ

Rth(ch-A) = 62.5˚C/W

(6)

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

L - Inductive Load - mH

IAS - Single Avalanche Current - A

1 10 100

1 10

VDD = 150 V VGS = 20 → 0 V RG = 25 Ω Starting Tch = 25°C

IAS = 5.0 A

0.01 0.1

0.1

EAS = 16.7

mJ

SINGLE AVALANCHE ENERGY DERATING FACTOR

75 125 150

Starting Tch - Starting Channel Temperature - ˚C

Energy Derating Factor - %

50 100

25

VDD = 150 V RG = 25 Ω VGS = 20→ 0V IAS ≤ 5.0 A 100

80

60

40

20

0

(7)

PACKAGE DRAWING(Unit: mm)

Isolated TO-220 (MP-45F)

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

1.Gate 2.Drain 3.Source 10.0±0.3

3.2±0.2 φ

15.0±0.3 3±0.1 12.0±0.213.5 MIN.

4±0.2

0.7±0.1 1.3±0.2

1.5±0.2 2.54 TYP.

2.54 TYP.

1 2 3

2.5±0.1 0.65±0.1

4.5±0.2 2.7±0.2

EQUIVALENT CIRCUIT

Source Body Diode Gate

Drain

(8)

The information in this document is current as of November, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

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Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

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Customers must check the quality grade of each semiconductor product before using it in a particular application.

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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.

(Note)

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