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MOS FIELD EFFECT TRANSISTOR
2SK3297
SWITCHING
N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3297 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
•Low gate charge
QG = 18 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(ON) = 1.6 Ω MAX. (VGS = 10 V, ID = 2.5 V)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A= 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current(DC) (TC = 25°C) ID(DC) ±5.0 A
Drain Current(pulse) Note1 ID(pulse) ±20 A
Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 5.0 A
Single Avalanche Energy Note2 EAS 16.7 mJ
Notes1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω , VGS = 20 →0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK3297 Isolated TO-220
(Isolated TO-220)
ELECTRICAL CHARACTERISTICS (T
A= 25°C)
Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit
Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V 100 µA
Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA
Gate to Source Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 3.5 V
Forward Transfer Admittance | yfs| VDS = 10 V, ID = 2.5 A 1.5 S
Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 2.5 A 1.3 1.6 Ω
Input Capacitance Ciss VDS = 10 V 750 pF
Output Capacitance Coss VGS = 0 V 130 pF
Reverse Transfer Capacitance Crss f = 1 MHz 9.7 pF
Turn-on Delay Time td(on) VDD = 150 V, ID = 2.5 A 17 ns
Rise Time tr VGS(on) = 10 V 3 ns
Turn-off Delay Time td(off) RG = 10 Ω 37 ns
Fall Time tf 10 ns
Total Gate Charge QG VDD = 450 V 18 nC
Gate to Source Charge QGS VGS = 10 V 4 nC
Gate to Drain Charge QGD ID = 5.0 A 7 nC
Body Diode Forward Voltage VF(S-D) IF = 5.0 A, VGS = 0 V 0.9 V
Reverse Recovery Time trr IF = 5.0 A, VGS = 0 V 1.4 µs
Reverse Recovery Charge Qrr di/dt = 50 A/µs 5.3 µC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
RG = 25 Ω PG. 50 Ω
L
VDD
VGS = 20 → 0 V
BVDSS
IAS
ID
VDS
Starting Tch
VDD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG. RG
0 VGS
D.U.T.
RL
VDD
τ = 1 sµ Duty Cycle ≤ 1%
VGS Wave Form
ID Wave Form
VGS 10%
VGS(on) 90%
010%
ID
90%
90%
td(on) tr td(off) tf 10%
τ
ID 0
ton toff
PG. 50 Ω
D.U.T.
RL
VDD
IG = 2 mA
TYPICAL CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID - Drain Current - A
00 10 30 40
8 6
4 12
10
20
Pulsed 2
VGS =10 V 8.0 V
6.0 V
FORWARD TRANSFER CHARACTERISTICS
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Pulsed
0 5 10 15
VDS = 10 V 10
1
0.1
0.01 100
Tch = −25˚C 25˚C 75˚C 125˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
VGS(off) - Gate to Source Cut-off Voltage - V
VDS = 10 V ID = 1 mA
0 1 2 3 4
−50 0 50 100 150
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Pulsed VDS = 10 V
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
10 1
0.1 0.1
1 10
Tch = −25˚C 25˚C 75˚C 125˚C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - Ω
0 5 10 15 20
2 4
3
0 1
Pulsed
ID = 5.0 A 2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
1
10 1
0.1 2 3 4
100 Pulsed
0
VGS = 10 V 20 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-state Resistance - Ω
0−50 2
1
0 50 100 150
4
3
2.5 A VGS = 10 V
Pulsed
ID = 5.0 A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
ISD - Diode Forward Current - A
0 1.5
VSD - Source to Drain Voltage - V 1 0.5
Pulsed
0.1
0.01 1 10 100
0 V VGS = 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
0.1 10
1 100 1000 10000
1 10 100 1000
VGS = 0 V f = 1 MHz
Coss
Crss Ciss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on), tr, td(off), tf - Switching Time - ns
10
1
0.1 1
100
10 tf
tr
td(on)
td(off)
VDD = 150 V VGS = 10 V RG = 10 Ω
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
ISD - Diode Forward Current - A
trr - Reverse Recovery Time - ns
di/dt = 50 A/ s VGS = 0 V 0.1
100
1 10
10000
1000
µ
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VGS - Gate to Source Voltage - V
QG - Gate Charge - nC
VDS - Drain to Source Voltage - V
0
0 8 16 24 32
400
200 600
4 2 0 8 6
VDS
16 14 12 10
VGS
ID = 5.0 A
VDD = 450 V 300 V 150 V
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
Tch - Channel Temperature - ˚C
dT - Percentage of Rated Power - %
0 20 40 60 80 100 120 140 160 0
20 40 60 80 100
TC - Case Temperature - ˚C
PT - Total Power Dissipation - W
0
0 20 40 60 80 100 120 140 160 TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
10 20 30 40
FORWARD BIAS SAFE OPERATING AREA
1 10 100 1000
ID - Drain Current - A
0.1
VDS - Drain to Source Voltage - V 100
10
1
Power Dissipation Limited 100
µs 3 ms1 ms 10 ms
PW = 10
µs ID(DC)
ID(pulse)
30 ms 100 ms TC = 25˚C
Single Pulse RDS(on)
Limited (@V
GS = 10 V)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - ˚C/W
10
0.01 0.1 1 100
1 m 10 m 100 m 1 10 100 1000
Single Pulse
10 100
Rth(ch-C) = 3.57˚C/W
µ µ
Rth(ch-A) = 62.5˚C/W
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
L - Inductive Load - mH
IAS - Single Avalanche Current - A
1 10 100
1 10
VDD = 150 V VGS = 20 → 0 V RG = 25 Ω Starting Tch = 25°C
IAS = 5.0 A
0.01 0.1
0.1
EAS = 16.7
mJ
SINGLE AVALANCHE ENERGY DERATING FACTOR
75 125 150
Starting Tch - Starting Channel Temperature - ˚C
Energy Derating Factor - %
50 100
25
VDD = 150 V RG = 25 Ω VGS = 20→ 0V IAS ≤ 5.0 A 100
80
60
40
20
0
PACKAGE DRAWING(Unit: mm)
Isolated TO-220 (MP-45F)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
1.Gate 2.Drain 3.Source 10.0±0.3
3.2±0.2 φ
15.0±0.3 3±0.1 12.0±0.213.5 MIN.
4±0.2
0.7±0.1 1.3±0.2
1.5±0.2 2.54 TYP.
2.54 TYP.
1 2 3
2.5±0.1 0.65±0.1
4.5±0.2 2.7±0.2
EQUIVALENT CIRCUIT
Source Body Diode Gate
Drain
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