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SGS THOMSON

M©1©[1L[1©7M®D©S

BD233/5/7 BD234/6/8

MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS

I ESCRIPTION

' -e BD233, BD235 and BD237 are silicon epitaxial- :ase NPN power transistors in Jedec TO-126 : =stic package intended for use in medium power

ear and switching applications.

~ 'e complementary PNP types are the BD234, : 3236 and BD238 respectively.

•.TERNAL S CHEM ATIC DIAG RA MS

ABSOLUTE MAXIMUM RATINGS

Sy mb ol P a r a m e t e r N P N

P N P *

V a l u e B D 2 3 3 Unit B D 2 3 4

B D 2 3 5 B D 2 3 6

B D 2 3 7 B D 2 3 8

V c B O Collector-base Voltage ( Ie = 0 ) 45 60 100 V

V c E O Collector-emitter Voltage (lB = 0) 45 60 80 V

ccLUO>

Collector-emitter Voltage ( Rb e = 1 K£2) 45 60 100 V

< m 03 O Emitter-base Voltage (lc = 0) 5 V

•c Collector Current 2 A

IC M Collector Peak Current 6 A

P t o t Total Power Dissipation at T c a s e £ 25 °C 25 W

T s t g Storage Temperature - 65 to 150

°c

T , Junction Temperature 150

°c

‘ For PNP types voltage and current values are negative.

December 1988 1/4

(2)

BD233/234/235/236/237/238

THERMAL DATA

Rth j Thermal Resistance Junction-case Max 5 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d it io n s M in. Ty p. M a x . Unit

IcBO Collector Cutoff Currento for BD233/34 VCB = 45 V 100 pA

II for BD235/36 Vcb = 60 V 100 pA

for BD237/38 Tcase = 150 °C

VCB =100 V 100 pA

for BD233/34 Vcb = 45 V 2 mA

for BD235/36 Vcb = 60 V 2 mA

for BD237/38 VCB =100 V 2 mA

Ie b o Emitter Cutoff Current

(«c - 0) VEB = 5 V 1 mA

VcEO(sus)* Collector-emitter Sustaining lo = 100 mA for BD233/34 45 V

Voltage for BD235/36 60 V

for BD237/38 80 V

VcE(sat)* Collector-emitter Saturation

Voltage o II > l B =0.1 A 0.6 V

< CD m Base-emitter Voltage o II > VCE = 2 V 1.3 V

h FE* DC Current Gain lc = 150 mA Vce = 2 V 40 O II > Vce = 2 V 25

fy Transition Frequency lc =250 mA Vce = 10 V 3 MHz

h FE1/hFE2* Matched Pairs lc = 150 mA < O II ro < 1.6

* Pulsed : pulse duration = 300 ps, duty cycle < 1.5 %.

F or PNP types vo lta g e and cu rre n t values are n e g ative.

Safe Operating Areas. DC Current Gain (NPN types).

2/4

T SGS-THOMSON

“ v # M ICM OJKnM HICS

(3)

BD233/234/235/236/237/238

DC Current Gain (PNP types).

I « • § I > * 6 1

KT2 1 - l c (A)

DC Transconductance (NPN types).

0 0.5 1 1.5 VQgtV)

DC Transconductance (PNP types). Collector-emitter Saturation Voltage (NPN types).

0 0.5 t IS

Collector-emitter Saturation Voltage (PNP types). Collector-emitter Saturation Voltage (NPN types).

10-* 10-2 10-1 - lB (A )

r Z J

SCS-THOMSON

“ ■;# M craucniM iics

3/4

(4)

BD233/234/235/236/237/238

Collector-emitter Saturation Voltage (PNP types). Base-emitter Saturation Voltage (NPN types).

Saturated Switching Characteristics (PNP types).

0 50 KX) TC4**(*C>

4/4

SCS-THOMSON

mCMBUSCmmC*

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