BFW16A

SGS-THOMSON ^BFW16A

BFW17A

CATV-MATV AMPLIFIERS

DESCRIPTION

The BFW 16A and BFW 17A are multi-emitter sili­

con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and band-aerial amplifiers with high output power from 40 to 860 MHz.

Another possible application is as the final stage of the wide band vertical amplifier in high speed oscil­

loscopes.

ABSOLUTE MAXIMUM RATINGS

Symbol P ar am e te r Value Unit

VcB O Collector-base Voltage ( Ie = 0) 40 V

VcER Collector-emitter Voltage (Rbe S 50 Q) 40 V

VcE O Collector-emitter Voltage ( Ib = 0) 25 V

Ve b o Emitter-base Voltage ( lc = 0 ) 3 V

lc Collector Current 150 mA

I CM Collector Peak Current 300 mA

P tot Total Power Dissipation at T amb £ 25 °C 0.7 W

3t Tcase — 1 25 “C 1.5 W

T s t g . T j Storage and Junction Temperature - 65 to 200 ° C

December 1988 1/4

BFW16A-BFW17A

THERMAL DATA

° t h j - c a s e Thermal Resistance Junction-case Max 50 °C/W

^ t h j - a m b Thermal Resistance Junction-ambient Max 250 °C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 =C unless otherwise specified)

Symbol P ar am et er Te st Conditions Min. Typ. Max. Unit

ICBO

Collector Cutoff Current ( Ie

=

0)

VCB = 20 V Tamb = 150 =C 20

uA

V(BR)EBO

Emitter-base Breakdown Voltage

do = 0 ) l E

=

100 uA 3 V

<

o Collector-emitter Knee Voltage lc

=

100 mA 0.75

V

h F E * DC Current Gain

lc =

50 mA

Vce =

5 V

l c

=

150 mA V Ce

=

5 V

25 25

fT

Transition Frequency lc = 1 5 0 mA V CE

=

15 V f

=

500 MHz

for BFW 16A for BFW 17A

1.2 1.1

GHz GHz

CcBO

Collector-base Capacitance l E = 0 V Cb

=

15 V

f

=

1 MHz

4

PF

C r e Reverse Capacitance lc

=

10 mA V Ce

=

15 V

f

=

1 MHz

1.7

PF

NF Noise Figure (for BFW 16A only)

l c

=

30 mA VCE

=

15 V

Rg

=

75 Q f

=

200 MHz

6

dB

G p e Power Gain (not neutralized) lc

=

70 mA V Ce

=

18 V

f

=

200 MHz

for BFW 16A and BFW 17A f = 8 0 0 MHz

For BFW 16A only

16

6.5

dB

dB

P o Output Power lc

=

70 mA V Ce

=

18 V

Channel

9|11

for BFW 16A for BFW 17A Channel 62l2)

For BFW 16A only

130

70 150 150 90

mW mW

mW

* Pulsed : pulse duration = 300 ps, duty cycle = 1 %.

** Ib = value for which lc = 110 mA at Vce = 1V.

(1) fP = 202 MHz, fq = 205 MHz, f(2q- P) = 208 MHz.

(2) fp = 798 MHz, fq = 802 MHz, f<2q - P) = 806 MHz.

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BFW16A-BFW 17A

TEST CIRCUIT

Test Circuit for Power Gain and Output Power Measurements (f = 200 MHz).

High Frequency Current Gain. Reverse Capacitance.

Input Impedance Sue (normalized 50

Q ).

Forward Transfer Coefficient S

2

i e.

90* G - 3369

*77 SGS-THOMSON

^3/4

BFW16A-BFW17A

Reverse Transfer Coefficient S i

2

e. Output Impedance S

22

e (normalized 50 Q).

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