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JetiEU ^Etni-tLonductoi

C/ tj

., U na.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081 U.S.A.

TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960

Silicon NPN Power Transistor BDY74

DESCRIPTION

• Excellent Safe Operating Area

• Collector-Emitter Sustaining Voltage- : VCEo(sus)= 120V(Min.)

• Collector-Emitter Saturation Voltage- :VCE(sat)=1.0V(Max)@lc = 3A

APPLICATIONS

• Designed for use in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL

VCBO VCEO

VEBO Ic ICP

IB PC Tj

Tstg

PARAMETER

Collector-Base Voltage Collector-Emitter Voltage

Em itter-Base Voltage Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation@Tc=25°C

Junction Temperature Storage Temperature

VALUE

150 120

7 10

15 7

117

200 -65-200

UNIT

V V

V A A

A

W

•c

°c

THERMAL CHARACTERISTICS SYMBOL

Rth j-c

PARAMETER

Thermal Resistance.Junction to Case

MAX 1.5

UNIT

"C/W

PIN t. BASE 2. BifllTTER

3. COLLECT OR (CASE) TO-3 package

DIM A B

-JL,

D E 0 H K L N

g u

V

Iran

urn

MAX

3900 25.30

7.80 090 t.40

2867 8.30 1.10 1.60 10,32

546 1140 1675 1S.40 , 4.00

30 00 4.30

1350

iros

1962 420 3020 450

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

(2)

Silicon NPN Power Transistor BDY74

ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified

SYMBOL

VcEO(SUS)

VcEX(SUS)

VcE(sat)

VeE(on)

ICBO

ICEX

IEBO

MFE

fr

PARAMETER

Collector-Emitter Sustaining Voltage

Collector-Emitter Sustaining Voltage

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Current Gain-Bandwidth Product

CONDITIONS

lc=200mA;lB=0;L=25mH

lc= 100mA; VBE= -1.5V

lc= 3A; IB= 0.3A

lc= 3A; VCE= 4V

VCB=130V;IE=0

VCE=1 30V; VBE(om= 1-5V

VCE= 130V; VBE(ofl)= 1-5V Tc= 150'C VEB= TV; lc= 0

lc= 3A; VCE= 4V

lc=1A;VGE=10V

MIN

120

150

50

0.8

MAX

1.0

1.7

1.0

1.0 10

5.0

150

UNIT

V

V

V

V

mA

rriA

mA

MHz

Cytaty

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