2SK3061

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MOS FIELD EFFECT TRANSISTOR

2SK3061

SWITCHING

N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION

The 2SK3061 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low on-state resistance

RDS(on)1 = 8.5 mΩ MAX. (VGS = 10V, ID = 35A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0V, ID = 35A)

• Low Ciss: Ciss = 5200pF TYP.

• Built-in gate protection diode

• Isolated TO-220 package

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C)

Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, –10 V Drain Current (DC) (TC = 25°C) ID(DC) ±70 A Drain Current (pulse)^Note1 ID(pulse) ±280 A

Total Power Dissipation (TC = 25°C) PT1 35 W

Total Power Dissipation (TA = 25°C) PT2 2.0 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg –55 to +150 °C

Single Avalanche Current^Note2 IAS 35 A

Single Avalanche Energy^Note2 EAS 122.5 mJ

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 30 V, RG = 25Ω, VGS = 20 → 0 V

ORDERING INFORMATION

PART NUMBER PACKAGE

2SK3061 Isolated TO-220

(Isolated TO-220)

★

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2 ELECTRICAL CHARACTERISTICS (T

A

= 25°C)

CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA

Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA

Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V

Forward Transfer Admittance | yfs| VDS = 10 V, ID = 35 A 20 87 S

Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 35 A 6.3 8.5 mΩ

RDS(on)2 VGS = 4.0 V, ID = 35 A 8.2 12 mΩ

Input Capacitance Ciss VDS = 10 V 5200 pF

Output Capacitance Coss VGS = 0 V 1300 pF

Reverse Transfer Capacitance Crss f = 1 MHz 480 pF

Turn-on Delay Time td(on) ID = 35 A 75 ns

Rise Time tr VGS = 10 V 1150 ns

Turn-off Delay Time td(off) VDD = 30 V 360 ns

Fall Time tf RG = 10 Ω 480 ns

Total Gate Charge QG ID = 70 A 95 nC

Gate to Source Charge QGS VDD = 48 V 13 nC

Gate to Drain Charge QGD VGS = 10 V 30 nC

Body Diode Forward Voltage VF(S-D) IF = 70 A, VGS = 0 V 0.97 V

Reverse Recovery Time trr IF = 70 A, VGS = 0 V 70 ns

Reverse Recovery Charge Qrr di/dt = 100 A/µs 140 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25 Ω 50 Ω PG.

L

VDD

VGS = 20 → 0 V

BVDSS

IAS

ID

VDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG. RG

0 VGS

D.U.T.

RL

VDD

τ = 1 sµ Duty Cycle ≤ 1%

VGS Wave Form

ID Wave Form

VGS

10%

90%

010%

ID

90%

td(on) tr td(off) tf 10%

τ

ID

0

ton toff

PG. 50 Ω

D.U.T.

RL

VDD

IG = 2 mA

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TYPICAL CHARACTERISTICS (T

A

= 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

T^C - Case Temperature - °C

dT - Percentage of Rated Power - %

0 20 40 60 80 100 120 140 160

20 40 60 80 100

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

TC - Case Temperature - °C

PT - Total Power Dissipation - W

0 20 40 60 80 100 120 140 160

70 60 50 40 30 20 10

FORWARD BIAS SAFE OPERATING AREA

ID - Drain Current - A

V^DS - Drain to Source Voltage - V 1

10 100

0.1 1 10

T^C = 25˚C Single Pulse 0.1

100

Power Dissipation Limited

R^DS(on)

LimitedID(DC)

ID(pulse) PW = 10 µs 10 ms 1 ms

DC

1000

100 µs 100 ms

★

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

- Transient Thermal Resistance - ˚C/W

10

0.01 0.1 1 100 1000

Rth(ch-C)= 3.57 ˚C/W Rth(ch-A)= 62.5 ˚C/W

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4

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

0.1 1 10 100

0 1 2 3 4 5

Pulsed VDS = 10 V TA = 125˚C

75˚C 25˚C

−25˚C

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

V^DS - Drain to Source Voltage - V

0 2 3 4

200

1

Pulsed

V^GS = 10 V

V^GS = 4.0 V

100

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

I^D - Drain Current - A

| yfs | - Forward Transfer Admittance - S V^DS = 10 V

Pulsed

0.1 1.0

1 10 100

10 100

Tch = −25˚C 25˚C 75˚C 125˚C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

RDS(on) - Drain to Source On-state Resistance - mΩ

0 5

20

10 30

10 15

Pulsed

ID = 35 A

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT

RDS(on) - Drain to Source On-state Resistance - mΩ

1 0.1

30

10 100

0 10 20

Pulsed

10 V V^GS = 4.0 V

GATE CUT-OFF VOLTAGE vs.

CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VGS(off) - Gate Cut-off Voltage - V

VDS = 10 V ID = 1 mA

−50 0 50 100 150

0 1.0 2.0

1.5

0.5

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DRAIN TO SOURCE ON-STATE RESISTANCE vs.

CHANNEL TEMPERATURE

T^ch - Channel Temperature - ˚C

RDS(on) - Drain to Source On-state Resistance -mΩ

0 −50 5

0 50 100 150

I^D = 35 A 10

20

15

V^GS = 4.0 V

10 V

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

VSD - Source to Drain Voltage - V

ISD - Diode Forward Current - A

0.1

0 1 10 100

0.5

Pulsed

1 1.5

0 V VGS = 4.0 V

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE

VDS - Drain to Source Voltage - V

Ciss, Coss, Crss - Capacitance - pF

0.1 0.1 1 10 100

1 10 100

VGS = 0 V f = 1 MHz

Ciss

Coss

Crss

SWITCHING CHARACTERISTICS

td(on), tr, td(off), tf - Switching Time - ns

0.1 10 100 1000 10000

1 10 100

VDS = 30 V VGS = 10 V RG = 10 Ω

td(off)

td(on)

tr

tf

REVERSE RECOVERY TIME vs.

DRAIN CURRENT

trr - Reverse Recovery Time - ns

di/dt = 100 A / VGS = 0 V

µs

1 0.1 10

1 10 100

1000

100

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VDS - Drain to Source Voltage - V

0 25 50 75 100

20 40 60 80

2 4 6 8

0 VDD = 12 V

30 V 48 V

12 14 16

10 ID = 70 A VGS = 10 V

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6

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

L - Inductive Load - H

IAS - Single Avalanche Current - A

1.0 10 100

1 m 10 m

RG = 25 Ω VDD = 30 V VGS = 20 → 0 V Starting Tch = 25°C

IAS = 35 A

10µ 100µ

0.1

E_AS = 122.5

mJ

SINGLE AVALANCHE ENERGY DERATING FACTOR

Starting Tch - Starting Channel Temperature - ˚C

Energy Derating Factor - %

25 50 75 100

160 140 120 100 80 60 40 20

0 125 150

VDD = 30 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 35 A

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PACKAGE DRAWING (Unit: mm)

10.0 ± 0.3

3.2 ± 0.2 φ ^4.5^±^0.2

2.7 ± 0.2

2.5 ± 0.1 0.65 ± 0.1 1.5 ± 0.2

2.54 1.3 ± 0.2

2.54 0.7 ± 0.1

4 ± 0.2

15.0 ± 0.3 12.0 ± 0.2

3 ± 0.1

1 2 3

1.Gate 2.Drain 3.Source

13.5MIN.

Isolated TO-220 (MP-45F)

Body Diode

Source (S) Drain (D)

Gate (G)

EQUIVALENT CIRCUIT

Gate Protection Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

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M8E 00. 4

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(Note)

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