MSC80195

October 1992

GENERAL PURPOSE LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S011) hermetically sealed

. EMITTER BALLASTED

. CLASS A LINEAR OPERATION

. COMMON EMITTER

. VSWR CAPABILITY 20:1 @ RATED CONDITIONS

. ft 3.2 GHz TYPICAL

. NOISE FIGURE 12.0 dB @ 2 GHz

. ^P

⁼ 28 dBm MIN. @ 2.0 GHz

DESCRIPTION

The MSC80195 is a hermetically sealed NPN power transistor featuring a unique matrix structure.

This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point.

PIN CONNECTION

BRANDING 80195 ORDER CODE

MSC80195

ABSOLUTE MAXIMUM RATINGS (T _case = 25°C)

Symbol Parameter Value Unit

P

Power Dissipation (see Safe Area) — W

I

Device Bias Current 300 mA

V

Collector-Emitter Bias Voltage* 20 V

T

Junction Temperature 200 °C

T

Storage Temperature − 65 to +200 °C

R

Junction-Case Thermal Resistance* 35 °C/W

*Applies only to rated RF amplifier operation

1. Collector 3. Baser 2. Emitter 4. Emitter

THERMAL DATA

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ELECTRICAL SPECIFICATIONS (T _case = 25°C)

Symbol Test Conditions Value

Min. Typ. Max. Unit

G

* f = 2.0 GHz P

= 28 dBm — — 1 dB

∆G

* f = 2.0 GHz P

= 28 dBm ∆ P

= 10 dB 7.5 8.5 — dB

C

f = 1 MHz V

= 28 V — — 3.0 pF

* Note: V_CE

=

I_C

=

STATIC

Symbol Test Conditions Value

Min. Typ. Max. Unit

BV

I

= 1mA I

= 0mA 50 — — V

BV

I

= 1mA I

= 0mA 3.5 — — V

BV

IC = 5mA I

= 0mA 20 — — V

I

V

= 18V — — 0.5 mA

h

V

= 5V I

= 100mA 15 — 120 —

DYNAMIC

TYPICAL PERFORMANCE

TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs FREQUENCY

TYPICAL POWER OUTPUT & GAIN @ 1dB COMPRESSION POINT vs

COLLECTOR CURRENT

MAXIMUM OPERATING AREA FOR FORWARD BIAS OPERATION

TYPICAL LINEAR GAIN vs COLLECTOR CURRENT

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V

= 18 V

I

= 140mA

Zg = 50 ohms

TYPICAL S − PARAMETERS

PACKAGE MECHANICAL DATA All dimensions are in inches.

Ref.: Dwg. No. C127304A TEST CIRCUIT

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