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2N3724

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2N3724 SGS-THOMSON

HIGH-CURRENT SWITCH

DESCRIPTION

The 2N3724 is a silicon planar epitaxial transistor in TO-39 metal case. It is a high-current switch used for memory applications requiring breakdown vol­

tages up to 30 V and operating currents to 1 A.

ABSOLUTE MAXIMUM RATINGS

Symbol Param eter Value Unit

VcBO Collector-base Voltage (Ie =0) 50 V

(/)

o>

Collector-emitter Voltage ( Vb e =0) 50 V

< o m O Collector-emitter Voltage (Ib = 0) 30 V

Ve b o Emitter-base Voltage ( l c = 0) 6 V

lc Collector Current 1 A

P tot Total Power Dissipation at T arf)b < 25 °C 0.8 W

at T case 25 :C 3.5 w

Tstg. Tj Storage and Junction Temperature - 65 to 200 °C

.anuary 1989 1/3

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2N3724

THERMAL DATA

Rth j-case Thermal Resistance Junction-case Max 50 C/W

f>th j-amb Thermal Resistance Junction-ambient Max 220 =C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M in . T y p . M a x . U n it

IcBO Collector Cutoff Current (Ie=0) Vcb = 40 V 1.7 uA

Vcb = 40 V Tamb = 1 00 °C 120 uA

V (bR ) C B O Collector-base Breakdown

Voltage ( Ie = 0) lc = 10 pA 50 V

V ( B R ) C E S Collector-emitter Breakdown

Voltage ( Vb e = 0) lC = 10 pA 50 V

V < B R ) C E O * Collector-emitter Breakdown

30 V

Voltage ( l B = 0)

V (bR ) E B O Emitter-base Breakdown

Voltage (lc = 0) l E = 10 pA 6 V

V c E ( s a t ) * Collector-emitter Saturation lc = 10 mA Ib = 1 rnA 0.25 V

Voltage lc = 100 mA lB = 10 mA 0.20 V

lc = 300 mA lB = 30 mA 0.32 V

lc = 500 mA lB = 50 mA 0.42 V

lc = 800 mA lB = 80 mA 0.65 V

lc = 1000 mA l B = 100 mA 0.75 V

V B E ( s a t ) * Base-emitter Saturation Voltage lc = 10 mA lB = 1 mA 0.64 0.76 V

lc = 100 mA lB = 10 mA 0.75 0.86 V

lc = 300 mA lB = 30 mA 0.89 1.1 V

lc = 500 mA lB = 50 mA 0.9 1.2 V

lc = 800 mA lB = 80 mA 1.0 1.5 V

lc = 1000 mA l B = 100 mA 1.1 1.7 V

h F E * DC Current Gain lc = 10 mA Vce= 1 V 30 60

lc = 100 mA Vce= 1 V 60 90 150

lc = 300 mA VCE =1 V 40 60

lc = 1000 mA VCE = 5 V 30 lc = 800 mA VCE = 2 V 25 lc = 500 mA Vce= 1 V 35

h f e High Frequency Current Gain lc = 50 mA

f = 100 MHz

Vce=10 V 3

CcBO Collector-base Capacitance lc =0 f = 1 MHz

VCB =10 V

12 pF

Cebo Emitter-base Capacitance lc =0 f = 1 MHz

VEB =0.5 V 55 pF

t o n Turn-on Time l c = 500 mA

l B = 50 mA

VCC =30 V 35 ns

t o f f Turn off Time lc = 500 mA Vcc =30 V 60 ns

Ib 1= — IB 2 = 5 0 mA Pulsed : pulse duration = 300 ps, duty cycle = 1 %.

** See test circuit.

SGS-THOMSON 2/3

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2N3724

Switching Characteristics. Switching Characteristics.

Test Circuit for ton. toff.

PULSE GENERATOR : t,. ti< 1.0 ns PW = 1.0 ms Zin = 50 W DC < 2 %

TO OSCILLOCOPE

< 1.0 ns

Zin> 100 KW

T SGS-THOMSON

^ 7 # [?an©E^©[i[L[lCT!^Cc)MO(SS

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