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BFX56A

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BFY56 BFX56A

SGS-THOMSON

AMPLIFIERS AND SWITCHES

DESCRIPTION

The BFX56 and BFY56A are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for amplifier and switching applica­

tions over a wide range of voltage and current.

ABSOLUTE MAXIMUM RATINGS

Symbol P ar am e te r BFY56 BFY56A Unit

V c E S Collector-emitter Voltage ( V Be = 0) 85 85 V

V C E O Collector-emitter Voltage (lB = 0) 45 55 V

Ve b o Emitter-base Voltage (lc = 0) 7 V

■ c Collector Current 1 A

P t o t Total Power Dissipation at T amb £ 25 ;C 0.8 W

3t T Case — 25 'C 5 W

Tsrp.T, Storage and Junction Temperature - 55 to 200 °C

November 1988 1 4

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BFY56-BFY56A

THERMAL DATA

H t h j - c a s e Thermal Resistance Junction-case Max 35 °C/W

R t h j - a m b Thermal Resistance Junction-ambient Max 219 °C/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 =C unless otherwise specified)

Symbol Pa ra me te r Te st Conditions Min. Typ. Max. Unit

Ic e s Collector Cutoff Current VCE = 50 V 0.2 20 nA

(V BE = 0 ) VCE = 50 V 7 amb = 1 50 'C 0.2 20 uA

Ie b o Emitter Cutoff Current

(lc = 0 ) <

i 03 II c_n < 0.1 20 nA

V(BR)CES Collector-emitter Breakdown

Voltage ( Vb e = 0) lc = 100 qA 85 V

V(BR)CEO* Collector-emitter Breakdown

Voltage (I b = 0) l c = 30 mA for BFY56 for BFY56A

45 55

V V V(BR)EBO Emitter-base Breakdown

Voltage (lc = 0) l E = 100 liA 7 V

VcE(sat)* Collector-emitter Saturation for BFY56

Voltage lc = 150 mA l B = 15 mA 0.13 0.3 V

lc = 1 A for BFY56A

l B = 0.1 A 0.65 1.2 V

lc = 10 mA IB = 1 mA 0.05 V

l c = 150 mA l B = 15 mA 0.13 0.25 V

lc = 1 A IB =0.1 mA 0.65 1 V

V B E ( s a t ) * Base-emitter Saturation for B FY5 6

Voltage lc = 150 mA l B = 15 mA 0.85 1.5 V

lc = 1 A for BFY56A

la =0.1 A 1.5 2.3 V

lc = 10 mA I b = 1 mA 0.68 0.8 V

lc = 150 mA la = 15 mA 0.85 1 V

lc = 1 A l B = 0.1 A 1.3 1.6 V

h F E * DC Current Gain for BFY56

l c = 0.1 mA V CE = 1 0 V 15 50 l c = 500 mA V CE = 10 V 20 55 lc = 150 mA

for BFY56A

VCE = 1 V 30 70 150

l c = 0.1 mA V CE = 1 V 20 50 lc = 5 mA V CE = 1 V 50 85 lc = 150 mA VCE = 1 V 40 80 120 lc = 500 mA V CE = 10 V 25 55

h f e Small Signal Current Gain o II 3 > <o II cn <

f = 1 MHz for BFY56 60

for BFY56A 80

f T Transition Frequency lc = 50 mA VCE = 10 V

f = 20 MHz for BFY56 40 90 MHz

for BFY56A 60 90 MHz

Pulsed : pulse duration = 300 ps. duty cycle = 1 %.

2/4 £ Z

T SGS-THOMSON

^ 7 # RSD(S3S©J[LI(37S«8i;G£i

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BFY56-BFY56A

ELECTRICAL CHARACTERISTICS (continued)

Symbol P ar a m e te r Te st Conditions Min. Typ. Max. Unit

Ce b o Emitter-base Capacitance

I V l M H z 50 80 pF

o o CD o Collector-base Capacitance

I - ' m h z V c b = 1 0 V 14 25 pF

hi e Input Impedance l c = 1 mA Vc e = 5 V f = 1 kHz for BFY56

for BFY56A

1.8 2

k fi k£J

h re Reverse Voltage Ratio l c = 1 m A V Ce = 5 V

f = 1 kHz 2.1x10~4

Pulsed : pulse duration = 300 us. duty cycle = 1 %.

DC Current Gain. Collector-emitter Saturation Voltage.

Base-emitter Saturation Voltage.

10' ' 1 10 10* l C (mA)

Emitter-base and Collector-base Capacitances.

51 SGS-THOMSON

3/4

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BFY56-BFY56A

Transition Frequency. Normalized h Parameters.

G-3149M

lC (mA)

SGS-THOMSON RiilO(SIB®[|[LiK£¥i3?®8SDS8 4/4

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