-^dnauator Lpioauoti, Unc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081 U.S.A.
TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960
UHF power transistor BLW81
DESCRIPTION
N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltages up to 13,5 V.
The resistance stabilization of the transistor provides protection against device damage at severe load mismatch conditions.
The transistor is housed in a V4"
capstan envelope with a ceramic cap.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 "C in an unneutralized common-emitter class-B circuit MODE OF OPERATION
c.w.
c.w.
VCE V 12,5 12,5
f MHz 470 175
PL w
10 10
Gp dB
> 6,0 typ. 13,5
% n
> 60 typ. 60
Zj ti 1,3+J2,5 1,2- JO, 6
YL
mS 150-J66 140-J80
PIN CONFIGURATION PINNING-SOT122A.
Top view
Fig.1 Simplified outline. SOT122A.
PIN 1 2 3 4
DESCRIPTION collector
emitter base emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information rurnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NI Semi-Conductors encourages customers to verify rhat datasheets are current before placing orders.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0)
peak value VCESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c. or average) Ic Collector current (peak value); f> 1 MHz ICM R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Ptot
Storage temperature Tstg
Operating junction temperature T,
36 V 17 V 4 V 2,5 A 7,5 A 40 W -65 to+150 JC max 200 "C max
max max max max max
Fig.2
r f power dissipation VCE< 16.5V f>1 MHz
Fig. 3
THERMAL RESISTANCE From junction to mounting base From mounting base to heatsink
Rthj-mb Rth mb-h
4,3 K/W 0,6 K/W
CHARACTERISTICS TJ = 25 "C
Breakdown voltages Collector-emitter voltage
VBE = 0; lc = 25 mA Collector-emitter voltage
open base; lc = 100 mA Emitter-base voltage
open collector; IE = 10 mA Collector cut-off current
VBE = 0; VC E= 1 7 V D.C. current gain d)
l c = 1 , 2 5 A ; VCE = 5V
Collector-emitter saturation voltage ir>
IC = 3,75A; IB = 0,75 A
Transition frequency at f = 500 MHz <1>
lc = 1,25 A; VCE = 12,5V lc = 3,75 A; VCE = 12,5V
Collector capacitance at f = 1 MHz lE = le = 0; VC B= 12,5V
Feedback capacitance at f = 1 MHz lc = 100 mA;VC E= 12,5V Collector-stud capacitance
Note
1. Measured under pulse conditions: tp < 200 us; 8 < 0,02.
V(BR)CES
V(BR)CEO
V(BR)EBO
ICES
VCE
fr fr
>
typ
typ
36 V
17 V
4 V
10 mA
10 35
typ 0,75 V
typ 1,3 GHz typ 0,9 GHz
34 pF
typ 18 pF typ 1,2 pF
•»— D
M - W
10mm scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT L
mm A 5.97 4,74
b 585 558
c 0.18 0.14
D 7.50 7 2 3
°1 6.48 6.22
7 2 4 693
M 1.66 1 39
N 11,82 11 04
N1 max.
1 02
"3 3.86 2 9 2
Q 338 2 7 4
W 8-32 UNC
W1 a
90°
