BFR505

DATA SHEET

Product specification

File under Discrete Semiconductors, SC14

September 1995

BFR505

NPN 9 GHz wideband transistor

FEATURES

• High power gain

• Low noise figure

• High transition frequency

• Gold metallization ensures excellent reliability.

DESCRIPTION

The BFR505 is an npn silicon planar epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV).

The transistor is encapsulated in a plastic SOT23 envelope.

PINNING

PIN DESCRIPTION Code: N30

1 base

2 emitter 3 collector

Fig.1 SOT23.

fpage

MSB003 Top view

1 2

3

QUICK REFERENCE DATA

Note

1. T_sis the temperature at the soldering point of the collector tab.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V_CBO collector-base voltage open emitter − − 20 V

V_CES collector-emitter voltage R_BE= 0 − − 15 V

I_C DC collector current − − 18 mA

P_tot total power dissipation up to T_s = 135°C; note 1 − − 150 mW

h_FE DC current gain I_C = 5 mA; V_CE = 6 V 60 120 250

C_re feedback capacitance I_C= i_c= 0; V_CB= 6 V; f = 1 MHz − 0.3 − pF

f_T transition frequency I_C = 5 mA; V_CE = 6 V; f = 1 GHz − 9 − GHz

G_UM maximum unilateral power gain

I_C = 5 mA; V_CE = 6 V;

T_amb = 25°C; f = 900 MHz − 17 − dB

I_C = 5 mA; V_CE = 6 V;

T_amb = 25°C; f = 2 GHz − 10 − dB

S₂₁² insertion power gain I_C = 5 mA; V_CE = 6 V;

T_amb = 25°C; f = 900 MHz 13 14 − dB

F noise figure Γ_s=Γ_opt; I_C= 1.25 mA; V_CE= 6 V;

T_amb= 25°C; f = 900 MHz − 1.2 1.7 dB Γs=Γopt; I_C= 5 mA; V_CE= 6 V;

T_amb= 25°C; f = 900 MHz − 1.6 2.1 dB Γs=Γopt; I_C= 1.25 mA; V_CE= 6 V;

T_amb= 25°C; f = 2 GHz − 1.9 − dB

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

Note

1. T_s is the temperature at the soldering point of the collector tab.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V_CBO collector-base voltage open emitter − 20 V

V_CES collector-emitter voltage R_BE= 0 − 15 V

V_EBO emitter-base voltage − 2.5 V

I_C DC collector current continuous − 18 mA

P_tot total power dissipation up to T_s= 135°C; note 1 − 150 mW

T_stg storage temperature −65 150 °C

T_j junction temperature − 175 °C

SYMBOL PARAMETER THERMAL RESISTANCE

R_{th j-s} from junction to soldering point (note 1) 260 K/W

CHARACTERISTICS

T_j = 25°C unless otherwise specified.

Notes

1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and

2. I_C= 5 mA; V_CE= 6 V; R_L= 50Ω; Tamb= 25°C;

f_p = 900 MHz; f_q= 902 MHz;

measured at f_(2p−q)= 898 MHz and f_(2q−p)= 904 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I_CBO collector cut-off current I_E = 0; V_CB = 6 V − − 50 nA

h_FE DC current gain I_C= 5 mA; V_CE = 6 V 60 120 250

C_e emitter capacitance I_C = i_c= 0; V_EB = 0.5 V; f = 1 MHz − 0.4 − pF C_c collector capacitance I_E= i_e= 0; V_CB= 6 V; f = 1 MHz − 0.4 − pF

C_re feedback capacitance I_C= 0; V_CB= 6 V; f = 1 MHz − 0.3 − pF

f_T transition frequency I_C = 5 mA; V_CE = 6 V; f = 1 GHz − 9 − GHz

G_UM maximum unilateral power gain (note 1)

I_C = 5 mA; V_CE = 6 V;

T_amb = 25°C; f = 900 MHz − 17 − dB

I_C = 5 mA; V_CE = 6 V;

T_amb = 25°C; f = 2 GHz − 10 − dB

S21² insertion power gain I_C = 5 mA; V_CE = 6 V;

T_amb = 25°C; f = 900 MHz 13 14 − dB

F noise figure Γ_s=Γ_opt; I_C= 5 mA; V_CE= 6 V;

T_amb= 25°C; f = 900 MHz − 1.2 1.7 dB Γs=Γopt; I_C= 5 mA; V_CE= 6 V;

T_amb= 25°C; f = 900 MHz − 1.6 2.1 dB Γs=Γopt; I_C= 5 mA; V_CE= 6 V;

T_amb= 25°C; f = 2 GHz − 1.9 − dB

P_L1 output power at 1 dB gain compression

I_C= 5 mA; V_CE= 6 V; R_L= 50Ω;

T_amb= 25°C; f = 900 MHz − 4 − dBm

ITO third order intercept point note 2 − 10 − dBm

G_UM 10 S₂₁²

1– S₁₁²

 

 1– S₂₂² ---dB.

log

=

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

200

150

50

0 100

MRA718 - 1

150 Ptot

(mW)

Ts(^oC)

Fig.3 DC current gain as a function of collector current.

VCE= 6 V.

handbook, halfpage

MRA719

0 250

50 100 150 200 hFE

IC (mA) 10⁻² 10⁻¹

10⁻³ 1 10 10²

Fig.4 Feedback capacitance as a function of collector-base voltage.

Ic = 0; f = 1 MHz.

handbook, halfpage

0 2 10

0.4 Cre (pF) 0.3

0.1

0 0.2

4 6 8

VCB (V) MRA720

Fig.5 Transition frequency as a function of collector current.

Tamb= 25°C; f = 1 GHz.

MRA721

10²

10⁻¹ 1 10

4 8 12

fT (GHz)

IC (mA) VCE = 3V VCE = 6V

Fig.6 Gain as a function of collector current.

VCE= 6 V; f = 900 MHz.

handbook, halfpage

0 4

IC (mA)

8 12

25

0 20

15 gain (dB)

10

5

MRA764

MSG GUM

Fig.7 Gain as a function of collector current.

VCE= 6 V; f = 2 GHz.

handbook, halfpage

0 4

IC (mA)

8 12

25

0 20

15 gain (dB)

10

5

MRA765

MSG

GUM Gmax

Fig.8 Gain as a function of frequency.

VCE= 6 V; Ic= 1.25 mA.

handbook, halfpage50 gain (dB)

0 10

MRA766

10² 10³ 10⁴

10 20 30

f (MHz) 40

MSG GUM

Gmax

Fig.9 Gain as a function of frequency.

VCE= 6 V; Ic= 5 mA.

handbook, halfpage50 gain (dB)

0 10

MRA767

10² 10³ 10⁴

10 20 30

f (MHz) 40

Gmax GUM

MSG

Fig.10 Minimum noise figure and associated available gain as functions of collector current.

VCE= 6 V.

handbook, halfpage5

0 1

2 5

0

−5 10 Gass

(dB) 15 20

3 Fmin (dB)

IC (mA) 4

MRA726

1 10 2000 MHz 1000 MHz

2000 MHz 1000 MHz f = 900 MHz

Fmin 900 MHz

500 MHz

Gass

10⁻¹

Fig.11 Minimum noise figure and associated available gain as functions of frequency.

VCE= 6 V.

handbook, halfpage5

0 1

2 5

0

−5 10 Gass

(dB) 15 20

3 Fmin (dB)

f (MHz) 4

MRA727

10² 10³ 10⁴

Gass

5 mA

Fmin 5 mA IC = 1.25 mA

1.25 mA

handbook, full pagewidth

MRA728 0 0.2 0.6

0.4 0.8 1.0

1.0 5

2 1

0.5

0.2

0

0.2

0.5

1

2 5

0.2 0.5 1

180°

−135°

−90°

−45°

0°

45°

90°

135°

stability circle

pot. unst.

region

F = 3 dB F = 2 dB

F = 1.5 dB ΓOPT

5 Fmin = 1. 2 dB

Fig.12 Noise circle figure.

Zo= 50Ω.

VCE= 6 V; IC= 5 mA; f = 900 MHz.

handbook, full pagewidth

MRA729 0 0.2 0.6

0.4 0.8 1.0

1.0 5

2 1

0.5

0.2

0

0.2

0.5

1

2 5

0.2 0.5 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

stability circle

pot. unst.

region

F = 3 dB

F = 4 dB F = 2.5 dB

ΓOPT

1

Fmin = 1. 9 dB

Fig.13 Noise circle figure.

Zo= 50Ω.

VCE= 6 V; IC= 5 mA; f = 2000 MHz.

MRA722 0 0.2 0.6

0.4 0.8 1.0

1.0 5

2 1

0.5

0.2

0

0.2

0.5

1

2 5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz 3 GHz

Fig.14 Common emitter input reflection coefficient (S₁₁).

VCE= 6 V; IC= 5 mA.

Zo= 50Ω.

handbook, full pagewidth

MRA723

15 12 9 6 3

180°

−135°

−90°

−45°

0°

45°

90°

135°

40 MHz 3 GHz

Fig.15 Common emitter forward transmission coefficient (S₂₁).

VCE= 6 V; IC= 5 mA.

handbook, full pagewidth

MRA724 0.5 0.4 0.3 0.2 0.1

180°

−90°

−135° −45°

0°

45°

90°

135°

3 GHz

40 MHz

Fig.16 Common emitter reverse transmission coefficient (S₁₂).

VCE= 6 V; IC= 5 mA.

handbook, full pagewidth

MRA725 0 0.2 0.6

0.4 0.8 1.0

1.0 5

2 1

0.5

0.2

0

0.2

0.5

1

2 5

0.2 0.5 1 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

3 GHz

40 MHz

Fig.17 Common emitter output reflection coefficient (S₂₂).

VCE= 6 V; IC= 5 mA.

Zo= 50Ω.

PACKAGE OUTLINE

UNIT A₁

max. bp c D E e₁ H_E L_p Q v w

REFERENCES OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE 97-02-28

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15 0.09

3.0 2.8

1.4

1.2 0.95

e

1.9 2.5

2.1

0.55

0.45 0.2 0.1 DIMENSIONS (mm are the original dimensions)

0.45 0.15

SOT23

bp D

e1 e

A

A1

Lp Q

detail X HE

E

wM

v M A

B

A B

0 1 2 mm

scale

A 1.1 0.9

c X

1 2

3

Plastic surface mounted package; 3 leads SOT23

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.