A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.
CHARACTERISTICS
TC = 25 °CSYMBOL
NONETEST CONDITIONSMINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 Ma 48 55 --- V
BVCER IC = 40 mA RBE = 150 Ω 30 40 --- V
BVCEO IC = 40 mA 25 28 ---
BVEBO IE = 10 mA 3.5 5.0 --- V
ICBO VCE = 24 V 10 --- --- mA
hFE VCE = 20 V IC = 2.0 A 15 40 100 ---
COB VCB = 25 V f = 1.0 MHz 50 pF PG
IMD3
VCE = 25 V ICQ = 150 mA f = 860 MHz POUT = 30 W f1 = 860.0 MHz f2 = 860.1 MHz
7.5
-35 --- dB
dBc VSWR1
VCE = 25 V VSWR = 20:1
VCE = 25 V ± 20% VSWR = 10:1 No Degradation in
Output Device Typ.
VSWR2
VCE = 25 V ± 20% VSWR = 5:1 PIN = PIN (norm) +3 dB
No Degradation in
Output Device Typ.
OVD VCE = 25 V PIN (norm) = +5 dB VCE = 25 V ± 20% PIN (norm) = +3 dB
No Degradation in
Output Device Typ.
NPN SILICON RF POWER TRANSISTOR
CBSL30
DESCRIPTION:
The ASI CBSL30 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz.
FEATURES:
•
Internal Input Matching Network
•
P
G= 7.5 dB at 30 W/960 MHz
•
Omnigold™ Metalization System
MAXIMUM RATINGS
I
C7.5 A
V
CBO48V
V
CEO25 V
V
EBO3.5 V
P
DISS58 W @ T
C= 25 °C T
J-65 °C to +200 °C
T
STG-65 °C to +150 °C
θθθθJC3.0 °C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10582
M INIMUM inches / mm
.115 / 2.92
.225 / 5.72 .075 / 1.91
.090 / 2.29 .720 / 18.29 B
C D E F G A
M AXIM UM
.085 / 2.16
.110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm
.125 / 3.18
H .355 / 9.02
DIM
K L I J
.004 / 0.10 .120 / 3.05
.230 / 5.84
.006 / 0.15 .130 / 3.30
.260 / 6.60 K 4X .025 R
.040x45°
.115
I .125 E .430 D
H G
F
J C
A B
2XØ.130
L
.160 / 4.06 .180 / 4.57
.980 / 24.89 .970 / 24.64
.355 / 9.02 .365 / 9.27
.365 / 9.27
