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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.

CHARACTERISTICS

TC = 25 °C

SYMBOL

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

BVCBO IC = 100 Ma 48 55 --- V

BVCER IC = 40 mA RBE = 150 Ω 30 40 --- V

BVCEO IC = 40 mA 25 28 ---

BVEBO IE = 10 mA 3.5 5.0 --- V

ICBO VCE = 24 V 10 --- --- mA

hFE VCE = 20 V IC = 2.0 A 15 40 100 ---

COB VCB = 25 V f = 1.0 MHz 50 pF PG

IMD3

VCE = 25 V ICQ = 150 mA f = 860 MHz POUT = 30 W f1 = 860.0 MHz f2 = 860.1 MHz

7.5

-35 --- dB

dBc VSWR1

VCE = 25 V VSWR = 20:1

VCE = 25 V ± 20% VSWR = 10:1 No Degradation in

Output Device Typ.

VSWR2

VCE = 25 V ± 20% VSWR = 5:1 PIN = PIN (norm) +3 dB

No Degradation in

Output Device Typ.

OVD VCE = 25 V PIN (norm) = +5 dB VCE = 25 V ± 20% PIN (norm) = +3 dB

No Degradation in

Output Device Typ.

NPN SILICON RF POWER TRANSISTOR

CBSL30

DESCRIPTION:

The ASI CBSL30 is Designed for Class AB, Cellular Base Station Applications up to 960 MHz.

FEATURES:

Internal Input Matching Network

P

G

= 7.5 dB at 30 W/960 MHz

Omnigold™ Metalization System

MAXIMUM RATINGS

I

C

7.5 A

V

CBO

48V

V

CEO

25 V

V

EBO

3.5 V

P

DISS

58 W @ T

C

= 25 °C T

J

-65 °C to +200 °C

T

STG

-65 °C to +150 °C

θθθθJC

3.0 °C/W

PACKAGE STYLE .230 6L FLG

ORDER CODE: ASI10582

M INIMUM inches / mm

.115 / 2.92

.225 / 5.72 .075 / 1.91

.090 / 2.29 .720 / 18.29 B

C D E F G A

M AXIM UM

.085 / 2.16

.110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm

.125 / 3.18

H .355 / 9.02

DIM

K L I J

.004 / 0.10 .120 / 3.05

.230 / 5.84

.006 / 0.15 .130 / 3.30

.260 / 6.60 K 4X .025 R

.040x45°

.115

I .125 E .430 D

H G

F

J C

A B

2XØ.130

L

.160 / 4.06 .180 / 4.57

.980 / 24.89 .970 / 24.64

.355 / 9.02 .365 / 9.27

.365 / 9.27

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