Pełen tekst

(1)

□ i 17 -i n n i UUL. I UUL

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Levei

• dv/'dt rated

• Ultra iow on-resistance

• 175 °C operating temperature

/ ^ X X X w X X / x x x / y / y y j y y / X / O T /

VHU5155

n : ~ a n : — o n : ~ o

n i l i r i l l m i O

r~\ n

K j u

T\/n#*

■ / r w \/no

v UC5 Ir,

• u R n n / __\

1 *uc5(on) O r r i^ r in n H n r l o

r i 17 m m

1—/ W £_ 1 W U fin \/w v V f in w / \a n m f i oV. V 1 W T O . 9 9 0 A R1 t_£_ W # \ 1_f n f i 7 0 7 R . Q 1 f i f i A . A Qxy vy i v » w v-/ i *-/»-/—r # \i_

Maximum Ratings Daramotor

1 Ml Ull IVIVI wyni K/MIQwmhnl Wall V UlM VrWioc 1 InitWl III

Printim iaiio rlrnin m irront

WUI 1 LI 1 IUCUO Ul dll 1 UUI 1 Cl 1 L /_

'U v\A

T _ - HAH Op

' c “ 1 u 1 ^ COuu

Puised drain current 'Dpuls

t r\r~ o

'C = " ^ n ^ a

^4-U Avaianche energy, single puise

/ D = 60 A, t/DD = 25 V, f i GS = 25 Q

Eas mJ

L = 70 pH, 7j = 25 °C 250

Reverse diode dv/df dv/df KV/ps

l s = 60 A, t/DS = 40 V, d//df = 200 A/ps 6

Gate source voltage Vqq ± 14 V

Power dissipation PintIU l W

7V = 25 °o■ V - / --- 250

Onpratinn tpmnprptnrp T:

1 J -55 ... + 175 0 o

Storage temperature ^"stg -55 ... + 175

ThormaI rocietanno ohir\ ooco1 IIUIIIIUI 1 UOIOIUI 1 \s\s , Ul ll|^/ UU.VJU o..

' ‘tnju ^ n _i u.ur Vt\M1 X/ V V Thormol rooiotonno nhin tri omkiont 1 1 ICI Midi 1 COIOLdl ICC, Cl lip LC dl 1 ICICI 1 L “ thJA _^ / c^ 7R

r\ 1 N 1 R ■ ■ ■ rl i+i / r»/x + /xn/M'i / 1 N 1 J[ f\ f\ A f\

L/iiM iiuim uiiy cdicyui y, l/iin m-wuhu ri_

i i- «i: — ~+; ~ h im 11- O' on h

iizo uiuiictuu ucueyuiy, unvi iizo oo- i /r/r / JJ / 1 / D / JOh “7/r / trr^

-4i r \ r -

i^ / e o

Semiconductor Group [

(2)

di 17 h nm D U i. I UUL

Electrical Characteristics, at T\ = 25°Ci unless otherwise specified

Parameter Symbol Values Unit

min tun* y t*m ■ I IMAimav

Static Characteristics

Drain- source breakdown voltage Vfts = O V ./n = 0.25 mA, T; = -40 °C

VrRRtn.RR 50

V

Gate threshold voltaoe

\/i^o = \/no /n — 1 mA• U O - U O . - U ...

Vrz i f

1.2 1.6

Zero gate voltage drain current

\/" US 1-..-* = Rn \f v i ' US = n \/ T: = “ v i 1 J or °nw

\/~„ = R n \/ \/— = n \/ t = .A n ° n

* U S * i ' U S v i * j -rv' ^

t/DS = 50 V, l/GS = 0 V , Tj = 150 °C

0.1

■j 10

m ni v v 100

n AI I# l pA Gate-source leakage current

i / _ o n \ / i / _ n w

VQS v » VDS ” u v

Igss

hi u n hl uu n n

nA

uicuii-ouuiufc! uii-iesisicmue

i f i \ / i r »a a

VGS = O v, /d = v3U m

nDS(on)

A A 4 X

U .U 14 A A J A U.U IO

A J A / / - \ I—

i^ / e o Semiconductor Group

(3)

di 17 h nm D U i. I UUL

Electrical Characteristics, at T\ = 25°C, unless otherwise specified

Parameter Svmbol_ # _ - - Values Unit

min. tvn.~ j t ~ ~ max.

Rwnomir* R hot'o/'tofieti/'e

U y i l H I I I I V V I I « I H V I V I I « 7 I I \ / ^

1 ■ / - s + o

1 1 C U I O G U I l u u o i a i I U C

y f s

O o

\ / \ o / n / _ o n a

V D S ^ ^ * # D * / ~ l D S ( o n ) m a x , #D ~ o u ^

O C Z l O

A C

H - i J -

l i i p i i i c a p a c i t an c e

n

° i s s

~ 1—

p i "

\ 0 r \ \ g \ 0 r \ t - \ 0 x -s r * i i _

V G S = u v, v G S = ^o v, t = i i v i n z - nzouun n n r \ —7 J — r \

o /o u Output capacitance

V 'q s = u v , v'd s = 2 5 V , f = 1 M H z

G ’ o s s

8 3 0 1 2 5 0

Reverse transfer capacitance O r s s

V Q S = 0 V , V n s = 2 5 V , f = 1 M H z - 3 5 0 5 2 5

Turn-on delay time f r l f n n ^v ns

V n n = 3 0 V . = 5 V . In = 3 A

U U ' ' \—/

R ^ c = S O Q

- - u o --- — - 4 5 7 0

Rise time t‘ I_

\ / r > r > = 3 0 \ / \ / ^ = S \ / / r . = 3 A

' U U ~ ~ v > ' O O w W ’ * U w ' ‘

R ---= R H O

1 - 11 "TV A n £_ 9-m1 V

T i i r n i u i i r u n u t^ ic iy u in t^r l o l o u t i m o ‘ d (o ff)

V D D = 3 0 V , V G S = 5 V , / D = 3 A o _ c o r \

n G S ” ^ ^ -

n o n

O J U

A " 7 n H - / U

Fail time jif.

i 0 n r> \ 0 \ 0 i— \ 0 i a

v DD = OU V, V0 3 = O V, / D = O M

f f G S = 5 0 Q - 1 0 0 1 3 5

-4 i r \ r -

iz /e o

Semiconductor Group o

(4)

di 17 h nm

D U i . I U U L

Electrical Characteristics, at T\ = 25°Ci unless otherwise specified

r a i cai i i c i d o y m u u i v a i u c o i i n ; t

U l I I I

m ill. iy fj.a mjm. mSX.

n c v c i o c u i u u c

Inverse diode continuous forward current

t rw- o / o = ^ o o

Is

ou

A

inverse diode direct current,puisea Tc = 25 °C

1SM

240 inverse diode forward voitage

% S = 0 V , /F = 120 A

V'sd

1.15 1.8

V

Reverse recovery time

t/R = 30 V. /.=-/ii ' i w, i • q d/Wdf = 100 A/us*i

frr

85

ns

Reverse recovery charge

VR = 30 V, /F-/Si d/F/d f = 100 A/ps

Qrr

130

pC

4A jl^ / y oi r \ i—

Semiconductor Group

(5)

di 17 h nm U U i. IUUL

Power dissipation

P tn t = f ( T r )

Drain current 'o = f ( Tc)

--- --- ~ --- ^ 4 - --- 1 / S C \ /

f j c t i c t i i i e i e i . v g g i u v

W

220

»

tot 2 0 0

180 160 140

100

80 60 40 20

0

\

\ V

l \ V

\

\

V

\

\

\ >v

\ V

\

\\ l \\

\

t

At

55 50 45 40

25 20 15 10 5

0

" S V

r s

\

\

V

\ 1

I T

\

\

\

1

\

\ 1

0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180

T_■ c T_■ C

S a fe o p e ra tin g a re a

/_ = m/__i

■U -t v " U S '

parameter: D = 0.01, Tc = 25°C

Transient thermal impedance

1 U0 1 U1 . . . ~ 2

V 1U

DS

~ 7 __ f / j . \

^th JC = J Vo)

parameter: D = fp / T

~thJC

-j rt m i —

i^/» o

Semiconductor Group o

(6)

di 17 h nm U U i. IUUL

Typ. output characteristics

I n =

parameter: fp = 80 ps

Typ. drain-source on-resistance

^D S (on) = J UdI

parameter: i/gg

i ^ u

a

120 110

h nn

i u u

90 80 70 60 50 40 ona u

20 10

0 ,|

Ptc t = 25 o w

kj i'

v g

1

///V

Vg sa M 2.0 -

b 2.5

c 3.0

d 3.5 -

e 40

f 45

g 5.0 ' h 5.5 .

i 6.0

7.0 '

k nn

III / / >

/ / / / / / / '

\ / / / / / / / / / / / / >

\ s

III//

/

\

M M /

§ ! / /

v

>>*

a m

V

/ /

\ wV /

/

m l /

1 7

a / /

W / i io.o

m

t

M f

/

- b

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 V 5,0

___\ / _ _

- ■ DS

0 . 0 0 0

1 2 0

Typ. transfer characteristics /D = f ( Vq s) parameter: fp = 80 ps

t / Ds ^ 2 X / D X flD S (on)m ax

Typ. forward transconductance ,gfs = f (Iq) parameter: fp = 80 ps,

t / Ds ^ 2 X / D X flD S (on)m ax

'd

k

9fs

k

-4 i r \ r -

i^ / e o

Semiconductor Group o

(7)

di 17 h nm D U i. I UUL

Drain-source on-resistance

^nS <nn\ = J{Ti)“ “ V— / J

/ _ on A t / _ c \/

pell CU I ICICI . /q “ OU M, VQg — 'O V

Gate threshold voltage Vos rtm = /(Ti)---\ ‘ ' V J

1 / _ t / / _

p c i i c u n t ? i t ? i . V Q g — V D S ’ ; D —

-60 -20 20 60 100 °C 180

______ w T

^ 'j

-60 -20 20 60 100 °C 180

______ w T

^ 'j

Typ. capacitances

j ’ / 1 / \

u = ^ v D S ;

parameter: Vqs - 0V, f = 1MHz

Semiconductor Group

Forward characteristics of reverse diode

/ p = / ( ^ s d)

parameter: T^, fp = 80 ps

0,0 0,4 0,8 1.2 1,6 2,0 2,4 V 3,0

^ r » # / - \ i—

i ^ / e o

(8)

di 17 h nm U U i. IUUL

Avalanche energy EAS = /(7j) parameter: / n = 60 A, Vnn = 25 V

-> _ o t z

iQg — tL'O ±6, I—l _ 7 A . . I_l/ u [jn

Drain-source breakdown voltage

^ ( B R ) D S S = ^ ( ^ j )

20 40 60 80 100 120 140 180

62

V

1 / c n

V (BR)DSS 057

58 57 56 55

53 52 51 50 49 48 47

-60 -20 20 60 100 °C 180

_____ T

" ' i

A

f/

_ / / Z_|

yl J Z_|

/

y

/

Z'

j r » / / - \ i—

i^ / » o

Semiconductor Group o

(9)

□ i 17 -i n n i UUL. I UUL

D orl/ano Hntlinoc

I U V IY U ^ V W U l l l l IVW T O - 2 2 0 A B

Dimension in mm

oo

C-vl

Q Q> '.j

9.5

‘i l/'N J v ;

U 7s~\

X /

?

0.75 ■

9 R/l

/ . ( U T

OOJ

CN

Lf >

. CO _

-1.05

l?. * a t

-I \u-

4.4 1 ^

Jf,i

L N

051 _ L

CD LO

' LO

hO

0.5 2.4

*1 \ l. . . ^ ___n n 4

i y punufi uireuiun, uur r mux. u.u^

r ) \ <“l o ks t n i^> i « n

-l j 'y ip1 im ii iii ly

3) max. 14.5 by dip tinning press burr max. 0.05

r\ -4 r » i r \ i—

i^ / e o Semiconductor Group

Obraz

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