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[ Z Z S G S - T H O M S O N

^ 7 # « l f 3 ® [ i y i O T ® « S B U X 11

HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR

:e s c r i p t i o n

~ne BUX11 is a silicon multiepitaxial NPN transis- in Jedec TO-3 metal case, intended for use in : * tching and linear applications in military and in- r^strial equipment.

ABSOLUTE M AXIMUM RATINGS

S y m b o l P a r a m e t e r V a l u e U n i t

Vc bO Collector-base Voltage (I e= 0) 250 V

Vcex Collector-emitter Voltage (VBe = - 1.5 V) 250 V

VcEO Collector-emitter Voltage (Ib = 0) 200 V

Veb o Emitter-base Voltage (lc = 0) 7 V

lc Collector Current 20 A

IcM Collector Peak Current (tp =10 ms) 25 A

Ib Base Current 4 A

P tot Total Power Dissipation at Tcase s 25 °C 150 W

T"stg Storage Temperature - 65 to 200 °C

T, Junction Temperature 200 °C

November 1988 1/4

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BUX11

THERM AL DATA

~»th j-case Thermal Resistance Junction-case Max 1.17 °C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 qC unless otherwise specified)

S y m b o l P a r a m e t e r T e s t C o n d i t i o n s M i n . T y p . M a x . U n it

ICEO Collector Cutoff Current

( Ib =0) V0E = 160 V 1.5 mA

ICEX Collector Cutoff Current VCE = 250 V VBE = - 1.5 V 1.5 mA

V 0E = 250 V Tcase = 125 °C

VBE = - 1.5 V 6 mA

Iebo Emitter Cutoff Current

Oc = 0) VEB = 5 V 1 mA

VCEO(SUS)* Collector-emitter Sustaining

Voltage lc = 200 mA 200 V

Vebo Emitter-base Voltage (lc = 0) Ie= 50 mA 7 V

VcE(sat)* Collector-emitter Saturation lc = 6 A lB =0.6 A 0.3 0.6 V

Voltage IC = 12 A Ib = 1.5 A 0.6 1.5 V

VBE(sat)* Base-emitter Saturation

Voltage lc = 12 A Ib =1.5 A 1.3 1.5 V

hFE* DC Current Gain _o II CD < VCE = 2 V 20 60

lc = 12 A VCe= 4 V 10

1 s / b Second Breakdown Collector VCe= 30 V t = 1 s 5 A

Current VCE = 140 V t = 1 s 0.15 A

f i Transition Frequency lc = 1 A

f = 10 MHz Vce= 15 V 8 MHz

t o n Turn-on Time (fig. 2) lc = 12 A

Vcc = 150 V Isi =1.5 A 0.3 1 ps

ts Storage Time (fig. 2) lc = 12 A I b i =1.5 A 1.2 1.8 ps

t f Fall Time (fig. 2) lB2 = - 1.5 A Vcc = 150 V 0.24 0.4 ps

Clamped Es/b Vclamp = 200 V 12

Collector Current (fig. 1) L = 500 pH

* Pulsed : pulse duration = 300 ps duty cycle < 2 %.

Safe Operating Areas.

0-4012

Derating Curves.

0 50 100 ISO Tc a s e (*C)

2/4 7 SGS-THOMSON

^ * 7 # RiiI0(S^®[i(LI©7^®Sfl0(gl

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BUX11

~hermal Transient Response.

Nr

10

«-

10

O-

Sollector-emitter Saturation Voltage.

5 ______________________ ___________ 6-*W 5

'tea.:

(V) 4

3

2

i m i M 3^ i i i i r r i i i i

0 1 2 3 4 l B (A )

Base-emitter Saturation Voltage.

VB £ (s a t) (V )

L5

as

o

10'1 1 10 l c (A )

G-4017

DC Current Gain.

G -«0U

Collector-emitter Saturation Voltage.

G-*016

Ill : — 1

h f F = 8

1 i I

.... 1 i__Z£

... i t Mi?yc

I I I ?5*C

:

» ' 1 10 I C (A )

Saturated Switching Characteristics.

G-4016

SCS-THOMSON raicMBUieirfMM

3/4

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BUX11

Saturated Switching Characteristics.

G-4019

G-4020 6-4021

Figure 1 : Clamped Es* Test Circuit. Figure 2 : Switching Times Test Circuit (resitive load).

SGS-THOMSON

“ ■7# MiaMUUKIMlMCa 4/4

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