M54HC367

GMilO(g(a@ilLiCT©IRgD©i________M74HC367/368

HEX BUS BUFFER (3-STATE) HC367 NON-INVERTING, HC368 INVERTING

■ HIGH SPEED

tpD = 13 ns (TYP.) at V cc = 5V

■ LOW POWER DISSIPATION Ice = 4 /iA (MAX.) at TA = 25°C 6V

■ HIGH NOISE IMMUNITY V N|H = V

n il

= 28

o

/

o

VCC (MIN).

■ OUTPUT DRIVE CAPABILITY 15 LSTTL LOADS

■ SYMMETRICAL OUTPUT IMPEDANCE M

^{o h}

I = I

ol

= 6 mA (MIN.)

■ BALANCED PROPAGATION DELAYS tpLH = tPHL

■ WIDE OPERATING VOLTAGE RANGE V ec (OPR) = 2V to 6V

■ PIN AND FUNCTION COMPATIBLE WITH 54/74LS367/368

DESCRIPTION

The M54/74HC367 and the M54/74HC368 are high speed CMOS HEX BUS BUFFER (3-STATE) fabri­

cated in silicon gate C2MOS technology. They ha­

ve the same high speed performance of LSTTL combined with true CMOS low power consumption.

These devices contain six buffers, four buffers are controlled by an enable input ( S i) and the other two buffers are controlled by the other enable in­

put (G2); the outputs of each buffer group are ena­

bled when S T and/or G2 inputs are held low, and when held high these outputs are disabled to be high-impedance.

These outputs are capable of driving up to 15 LSTTL loads. The designer has a choice of non­

inverting outputs (HC367) and inverting outputs (HC368).

All inputs are equipped with protection circuits against static discharge and transient excess v o l t a g e .

TRUTH TABLE

INPUTS OUTPUTS

G An Yn (367) Yn (368)

L L L H

L H H L

H X Z Z

X: DON'T CARE Z: HIGH IMPEDANCE

October 1988

B1N F1

Plastic Package Ceramic Frit Seal Package

V *

M1 C1

Micro Package Plastic Chip Carrier ORDERING NUMBERS:

M54HCXXX F1 M74HCXXX C1

M74HCXXX B1N M74HCXXX F1

M74HCXXX M1

PIN CONNECTIONS (top view)

51

HC367 1A Ty

2A 2Y

3 A

3Y

GNO

HC368 6i

1A 1Y

2A

2Y

3 A

3 Y

GND

1/5

CHIP CARRIER

NC = No internal Connection

ABSOLUTE MAXIMUM RATINGS

Sym bol Parameter Value Unit

VCC Supply Voltage - 0 . 5 to 7 V

V| DC Input Voltage — 0.5 to Vqq + 0.5 V

Vo DC Output Voltage — 0.5 to Vqq + 0.5 V

l|K DC Input Diode Current ± 20 mA

lOK DC Output Diode Current ± 20 mA

'O DC Output Source Sink Current Per Output Pin ± 35 mA

ICC or !gND DC V c c or Ground Current ± 70 mA

Pd Power Dissipation 500 C) mW

Tstg Storage Temperature - 6 5 to 150 °C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation un­

der these condition is not implied.

(*) 500 mW: = 65°C derate to 300 mW by 10 mW /°C: 65°C to 85°C

RECOMMENDED OPERATING CONDITIONS

Sym bol Parameter Value Unit

VCC Supply Voltage 2 to 6 V

V| Input Voltage 0 to V c c V

Vo Output Voltage 0 to V c c V

Ta

^ _ , 74HC Series

Operating Temperature 54RC Ser|es - 4 0 to 85

- 5 5 to 125 ^{» c}

tr, tf Input Rise and Fall Time

>> >inCkJJ^CD

OO> 0 to 1000

O to 500 0 to 400

ns

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SGS-THOMSON

DC SPECIFICATIONS

Symbol Parameter V cc Test C ondition

TA = 25°C 54HC and 74HC

- 4 0 to 85°C 74HC

- 5 5 tO l2 5 °C 54HC Unit

Min. Typ. Max. Min. Max. Min. Max.

V|H High Level Input 2.0 1.5 — — 1.5 — 1.5 —

Voltage 4.5 3.15 — — 3.15 — 3.15 — V

6.0 4.2 — — 4.2 — 4.2 —

V|L Low Level Input 2.0 ^{— —} 0.5 ^— 0.5 ^— 0.5

Voltage 4.5 — — 1.35 — 1.35 — 1.35 V

6.0 — — 1.8 — 1.8 — 1.8

VOH High Level Output 2.0 Vi •o

1.9 2.0

_

_1.9

_

1.9

_

Voltage 4.5 VlH - 2 0 fiA 4.4 4.5 — 4.4 — 4.4 — V

6.0 or 5.9 6.0 — 5.9 — 5.9 —

4.5 V|L - 6 . 0 mA 4.18 4.31 — 4.13 — 4.10 —

6.0 - 7 . 8 mA 5.68 5.8 — 5.63 — 5.60 —

VoL Low Level Output 2.0 — 0.0 0.1 ^— 0.1 — 0.1

Voltage 4.5 V|H 20 \ iA — 0.0 0.1 — 0.1 — 0.1 V

6.0 or — 0.0 0.1 — 0.1 — 0.1

4.5 V|L 6.0 mA — 0.17 0.26 — 0.33 — 0.40

6.0 7.8 mA — 0.18 0.26 — 0.33 — 0.40

l| Input Leakage 6.0 V| = Vc c or GND — — ±0.1 — ± 1 .0 — ± 1 .0 «A Current

•oz 3-State Output 6.0

V| =

V|H or V|L — — ± 0 .5 — ± 5 .0 — ± 1 0 4A Off-State Current V0 = V c c or GND

Icc Quiescent Supply 6.0 V| = VCc or GND — — 4 — 40 — 80 /*A

Current o II o

INPUT AND OUTPUT EQUIVALENT CIRCUIT

SCS-THOMSON

V / . -

3/5

AC ELECTRICAL CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)

T / = 25 °C - 4 0 to 85°C - 55 tO l2 5 °C S ym bol Parameter V cc Test C ond ition 54HC and 74HC 74HC 54HC Unit

Min. Typ. Max. Min. Max. Min. Max.

tTLH

Output Transition 2.0 ^— 22 60 — 75 — 90

tTHL

^{Time 4.5 — 8 12 — 15 — 18 ns}

6.0 — 7 10 — 13 — 15

tpLH

Propagation Delay 2.0 ^— 60 120 ^— 150 — 180

tpHL

^{Time * 4.5 — 15 24 — 30 — 36 ns}

6.0 — 13 20 — 26 — 31

tpLH

Propagation Delay 2.0 — 56 115 — 145 — 175

tPHL

^{Time ** 4.5 — 14 23 — 29 — 35 ns}

6.0 — 12 20 — 25 — 30

tpZL Output Enable 2.0 ^— 60 120 — 150 — 180

tpZH

^{Time 4.5 Rl = 1KO — 15 24 — 30 — 36 ns}

6.0 — 13 20 — 26 — 31

tpLZ Output Disable 2.0 ^— 63 150 ^— 190 — 225

(PHZ

^{Time 4.5 Rl = 1KS2 — 20 30 — 38 — 45 ns}

6.0 — 18 26 — 33 — 38

C|N Input Capacitance

—

^{- 5 10 - 10 — 10}

COUT

^{Output pF}

Capacitance — — 10 — — — — —

Cpd Power Dissipation ^— HC 367 ^— 34 — — — — —

Capacitance — HC 368 - 32 - — - -

—

PF

Note (t) CpD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit)

Average operating current can be obtained by the following equation.

lCC(opr)= CPD ■ VCC • f|N + lCC/6 (Per circuit).

* For M54/74HC367 only

** For M54/74HC368 only

SCS-THOMSON

4/5

SWITCHING CHARACTERISTICS TEST WAVEFORM

(G=” L") 6ns 6ns

NOTE: SUCH A LOGIC LEVEL SHALL BE APPLIED TO EACH INPUT THAT THE OUTPUT VOLTAGE STAYS IN THE APPOSITE SIDE TO THE SWITCH CONNECTION LEVEL, WHEN THE OUTPUT IS ENABLE

TEST CIRCUIT lCc (Opr.)

INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST

CPD CALCULATION

Cpo is to be calculated with the following formula by using the measured value of Ice (Opr.) in the test circuit opposite

„ ICC (O P r ) PD f|N ' V c c

In determining the typical value of Cpo, a relatively high frequency of 1 MHz was applied to f|N, in order to eliminate any error caused by the quiescent supply current.

5 , 7

SGS-THOMSON

M0«K^(KW.5M(ES

5/5