BTA25 BW BTA25 CW
SNUBBERLESS TM TRIACS
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (360°conduction angle)
Tc= 85°C 25 A
ITSM Non repetitive surge peak on-state current (Tjinitial = 25°C )
tp = 8.3 ms 260 A
tp = 10 ms 250
I2t I2t Value for fusing tp = 10 ms 312 A2s
dI/dt Critical rate of rise of on-state current
IG= 500 mA diG/dt = 1 A/µs. Repetitive F = 50 Hz
20 A/µs
Non Repetitive
100
Tstg
Tj
Storage and operating junction temperature range - 40, + 150 - 40, + 125
°C Tl Maximum lead temperature for soldering during 10s 260 °C ABSOLUTE RATINGS (limiting values)
IT(RMS)= 25A
HIGH COMMUTATION:
(dI/dt)c≥12A/ms BTA25-xxxCW (dI/dt)c≥22A/ms BTA25-xxxBW INSULATING VOLTAGE 2500V(RMS)
FEATURES
Symbol Parameter BTA25-xxxBW/CW Unit
VDRM
VRRM
Repetitive peak off-state voltage
Tj= 125°C 600 800 V
The BTA25-xxxBW/CW series use a high performance MESA GLASS technology.
The SNUBBERLESS concept offers suppression of RC network and it is suitable for application such as water heaters, motor control, welding equipment, ...
DESCRIPTION
RD91 (Plastic)
PG (AV)= 1 W PGM= 10 W (tp = 20µs) IGM= 4 A (tp = 20µs) GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-c) Junction to case for DC 1.7 °C/W
Rth(j-c) Junction to case for AC 360°conduction angle (F=50Hz) 1.3 °C/W THERMAL RESISTANCES
Symbol Test Conditions Quadrant Sensitivity
Unit
CW BW
IGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MIN 4 5 mA
MAX 35 50
VGT VD=12V (DC) RL=33Ω Tj= 25°C I-II-III MAX 1.3 V
IH * IT= 250 mA Gate open Tj= 25°C MAX 50 70 mA
IL IG= 1.2 IGT Tj= 25°C I-III MAX 50 70 mA
II MAX 60 80
VTM* ITM= 35A tp= 380µs Tj= 25°C MAX 1.5 V
IDRM
IRRM
VD= VDRM
VR= VRRM
Tj= 25°C MAX 5 µA
Tj= 125°C MAX 3 mA
dV/dt * VD=67%VDRM
Gate open Tj= 125°C MIN 750 1000 V/µs
(dI/dt)c * Without snubber Tj= 125°C MIN 12 22 A/ms
* For either polarity of electrode A2 voltage with reference to electrode A1
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
BTA 25 - 800 B W
INSULATED TRIAC
CURRENT
3 Quadrant VOLTAGE
SENSITIVITY
α= 30°
0 5 10 15 20 25
0 5 10 15 20 25 30
IT(rms)(A) P(W)
180°
α α
α= 60°
α= 90°
α= 120°
α= 180°
Fig.1 : Maximum power dissipation versus RMS on-state current.
0 25 50 75 100 125
0 5 10 15 20 25 30
Tcase(°C) IT(rms)(A)
α=180°
Fig.3 : RMS on-state current versus case tempera- ture.
-40 -20 0 20 40 60 80 100 120 140
0.0 0.5 1.0 1.5 2.0 2.5
Tj(°C) IGT,IH [Tj] / IGT,IH [Tj=25°C]
IGT
IH
Fig.5 : Relative variation of gate trigger currentand holding current versus junction temperature (typi- cal value).
0 20 40 60 80 100 120 140
0 5 10 15 20 25 30
Tamb(°C)
P(W) Tcase (°C)
α=180°
125 85
95
105
115
Rth=0°C/W Rth=1°C/W Rth=2°C/W
Rth=3°C/W
Fig.2 : Correlation between maximum power dissi- pation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
1 10 100 1000
0 20 40 60 80 100 120 140 160 180 200 220
Number of cycles ITSM(A)
Tj initial=25°C F=50Hz
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
1E-3 1E-2 1E-1 1E+0 1E+1
0.01 0.10 1.00
tp(s) K=[Zth(j-c)/Rth(j-c)]
Fig.4 : Relative variation of thermal impedance versus pulse duration.
1 2 5 10 100
200 500 1000
tp(ms) ITSM(A),I t(A s)
Tj initial=25°C ITSM
I t
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp < 10ms, and corresponding value of I2t.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1
10 100 300
VTM(V) ITM(A)
Tj=25°C
Tj max.:
Vto=0.88V Rd=16mΩ Tj=Tj max.
Fig.8 : On-state characteristics (maximum values).
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PACKAGE MECHANICAL DATA RD91 (Plastic)
L2 A2 L1
B2 C
C2
A1
C1 B1
N1
B F
I A
E3 N2
REF.
DIMENSIONS Millimeters Inches Min. Max. Min. Max.
A 40.00 1.575
A1 29.90 30.30 1.177 1.193
A2 22.00 0.867
B 27.00 1.063
B1 13.50 16.50 0.531 0.650
B2 24.00 0.945
C 14.00 0.551
C1 3.50 0.138
C2 1.95 3.00 0.077 0.118
E3 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535
L1 3.10 3.50 0.122 0.138
L2 1.70 1.90 0.067 0.075
N1 33° 43° 33° 43°
N2 28° 38° 28° 38°
Marking : type number Weight : 20 g
