A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.
CHARACTERISTICS T
C= 25
OC
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV CEO I C = 100 mA 26 V
BV CER I C = 100 mA R BE = 200 Ω 35 V
BV CES I C = 50 mA 60 V
BV EBO I E = 10 mA 3.5 V
I CES V CE = 30 V 10 mA
h FE V CE = 5.0 V I C = 1.0 A 30 45 120 ---
P G
IMD ηη C
V CC = 26 V P OUT = 150 W I CQ = 2 X 150 mA f = 960 MHz
8.0
35
-28
dB dBc
% ψ
ψ VSWR = 5:1 at all phase angles No Degradation in Output Power
NPN SILICON RF POWER TRANSISTOR
CBSL150
DESCRIPTION:
The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers.
FEATURES:
• Internal Input/Output Matching
• P G = 9.0 dB Typ. at 150 W/ 900 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
I C 25 A
V CEO 28 V
V CES 60 V
V EBO 3.5 V
P DISS 300 W @ T C = 25 O C T J -65 O C to +200 O C
T STG -65 O C to +150 O C
θθ JC 0.6 O C/W
PACKAGE STYLE .400 BAL FLG (C)
ORDER CODE: ASI10586
MINIMUM inches / mm
.380 / 9.65 .120 / 3.05
.780 / 19.81 B
C D E F G A
MAXIMUM
.130 / 3.30
.820 / 20.83 .390 / 9.91
inches / mm
1.090 / 27.69 H
DIM
K L I J
.003 / 0.08 .060 / 1.52
.007 / 0.18 .070 / 1.78
.205 / 5.21
N M
.850 / 21.59 .870 / 22.10
.220 / 5.59 .230 / 5.84
.435 / 11.05
.082 / 2.08 .100 / 2.54
.407 / 10.34 .395 / 10.03
.080x45° A B
F G H I
J K L M
(4X).060 R
.1925 D
C E
FULL R
N
1.335 / 33.91 1.345 / 34.16
.210 / 5.33
