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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.

CHARACTERISTICS T

C

= 25

O

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV CEO I C = 100 mA 26 V

BV CER I C = 100 mA R BE = 200 Ω 35 V

BV CES I C = 50 mA 60 V

BV EBO I E = 10 mA 3.5 V

I CES V CE = 30 V 10 mA

h FE V CE = 5.0 V I C = 1.0 A 30 45 120 ---

P G

IMD ηη C

V CC = 26 V P OUT = 150 W I CQ = 2 X 150 mA f = 960 MHz

8.0

35

-28

dB dBc

% ψ

ψ VSWR = 5:1 at all phase angles No Degradation in Output Power

NPN SILICON RF POWER TRANSISTOR

CBSL150

DESCRIPTION:

The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers.

FEATURES:

Internal Input/Output Matching

P G = 9.0 dB Typ. at 150 W/ 900 MHz

Omnigold™ Metalization System

MAXIMUM RATINGS

I C 25 A

V CEO 28 V

V CES 60 V

V EBO 3.5 V

P DISS 300 W @ T C = 25 O C T J -65 O C to +200 O C

T STG -65 O C to +150 O C

θθ JC 0.6 O C/W

PACKAGE STYLE .400 BAL FLG (C)

ORDER CODE: ASI10586

MINIMUM inches / mm

.380 / 9.65 .120 / 3.05

.780 / 19.81 B

C D E F G A

MAXIMUM

.130 / 3.30

.820 / 20.83 .390 / 9.91

inches / mm

1.090 / 27.69 H

DIM

K L I J

.003 / 0.08 .060 / 1.52

.007 / 0.18 .070 / 1.78

.205 / 5.21

N M

.850 / 21.59 .870 / 22.10

.220 / 5.59 .230 / 5.84

.435 / 11.05

.082 / 2.08 .100 / 2.54

.407 / 10.34 .395 / 10.03

.080x45° A B

F G H I

J K L M

(4X).060 R

.1925 D

C E

FULL R

N

1.335 / 33.91 1.345 / 34.16

.210 / 5.33

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